Light emitting device including a capping layer and a method for manufacturing the same

ABSTRACT

An opto-electronic device having a plurality of layers, comprising a first capping layer (CPL) comprising a first CPL material and disposed in a first emissive region configured to emit photons having a first wavelength spectrum that is characterized by a first onset wavelength; and a second CPL comprising a second CPL material and disposed in a second emissive region configured to emit photons having a second wavelength spectrum that is characterized by a second onset wavelength; wherein at least one of the first CPL and the first CPL material (CPL(m)1) exhibits a first absorption edge at a first absorption edge wavelength that is shorter than the first onset wavelength; and at least one of the second CPL and the second CPL material (CPL(m)2) exhibits a second absorption edge at a second absorption edge wavelength that is shorter than the second onset wavelength.

RELATED APPLICATIONS

The present application claims the benefit of priority to U.S.Provisional Patent Application No. 62/953,442 filed 24 Dec. 2019, thecontents of which are incorporated herein by reference in theirentirety.

TECHNICAL FIELD

The present disclosure relates to opto-electronic devices and inparticular to an opto-electronic device having multiple emissiveregions, each comprising first and second electrodes separated by asemiconductor layer and having a capping layer having optical propertiestuned to the emission spectrum wavelength range generated by theemissive region.

BACKGROUND

In an opto-electronic device such as an organic light emitting diode(OLED), at least one semiconducting layer is disposed between a pair ofelectrodes, such as an anode and a cathode. The anode and cathode areelectrically coupled to a power source and respectively generate holesand electrons that migrate toward each other through the at least onesemiconducting layer. When a pair of holes and electrons combine, aphoton may be emitted.

OLED display panels may comprise a plurality of (sub-) pixels, each ofwhich has an associated pair of electrodes. Various layers and coatingsof such panels are typically formed by vacuum-based depositiontechniques.

In some applications, it may be desirable to provide a conductivecoating and/or electrode coating in a pattern for each (sub-) pixel ofthe panel across either or both of a lateral and a cross-sectionalaspect thereof, by selective deposition of the conductive coating toform a device feature, such as, without limitation, an electrode and/ora conductive element electrically coupled thereto, during the OLEDmanufacturing process.

One method for doing so, in some non-limiting applications, involves theinterposition of a fine metal mask (FMM) during deposition of anelectrode material and/or a conductive element electrically coupledthereto. However, materials typically used as electrodes have relativelyhigh evaporation temperatures, which impacts the ability to re-use theFMM and/or the accuracy of the pattern that may be achieved, withattendant increases in cost, effort and complexity.

One method for doing so, in some non-limiting examples, involvesdepositing the electrode material and thereafter removing, including bya laser drilling process, unwanted regions thereof to form the pattern.However, the removal process often involves the creation and/or presenceof debris, which may affect the yield of the manufacturing process.

Further, such methods may not be suitable for use in some applicationsand/or with some devices with certain topographical features.

In some applications, it may be desirable to provide an opto-electronicdevice having multiple emissive regions each having opticalcharacteristics tuned to a wavelength spectrum emitted thereby.

BRIEF DESCRIPTION OF THE DRAWINGS

Examples of the present disclosure will now be described by reference tothe following figures, in which identical reference numerals indifferent figures indicate identical and/or in some non-limitingexamples, analogous and/or corresponding elements and in which:

FIG. 1 is a block diagram from a cross-sectional aspect, of an exampleelectro-luminescent device according to an example in the presentdisclosure;

FIG. 2 is a cross-sectional view of an example backplane layer of thesubstrate of the device of FIG. 1 , showing a thin film transistor (TFT)embodied therein;

FIG. 3 is a circuit diagram for an example circuit such as may beprovided by one or more of the TFTs shown in the backplane layer of FIG.2 ;

FIG. 4 is a cross-sectional view of the device of FIG. 1 ;

FIG. 5 is a cross-sectional view of an example version of the device ofFIG. 1 , showing at least one example pixel definition layer (PDL)supporting deposition of at least one second electrode of the device;

FIG. 6 is an example energy profile illustrating relative energy statesof an adatom absorbed onto a surface according to an example in thepresent disclosure;

FIG. 7 is a schematic diagram showing an example process for depositinga selective coating in a pattern on an exposed layer surface of anunderlying material in an example version of the device of FIG. 1 ,according to an example in the present disclosure;

FIG. 8 is a schematic diagram showing an example process for depositinga conductive coating in the first pattern on an exposed layer surfacethat comprises the deposited pattern of the selective coating of FIG. 7where the selective coating is a nucleation-inhibiting coating (NIC);

FIGS. 9A-D are schematic diagrams showing example open masks, suitablefor use with the process of FIG. 7 , having an aperture therewithinaccording to an example in the present disclosure;

FIG. 10A is an example version of the device of FIG. 1 , with additionalexample deposition steps according to an example in the presentdisclosure;

FIG. 10B is an example version of the device of FIG. 10A, in which thefirst portion includes a discontinuous coating;

FIG. 10C is a plan view of the first portion of the device of FIG. 10B;

FIG. 10D is an example version of the device of FIG. 10A, furthercomprising a third portion;

FIG. 10E is a plan view of a portion of the device of FIG. 10D;

FIG. 11A is a schematic diagram showing an example process fordepositing a selective coating that is a nucleation-promoting coating(NPC) in a pattern on an exposed layer surface that comprises thedeposited pattern of the selective coating of FIG. 9 ;

FIG. 11B is a schematic diagram showing an example process fordepositing a conductive coating in a pattern on an exposed layer surfacethat comprises the deposited pattern of the NPC of FIG. 11A;

FIG. 12A is a schematic diagram showing an example process fordepositing an NPC in a pattern on an exposed layer surface of anunderlying material in an example version of the device of FIG. 1 ,according to an example in the present disclosure;

FIG. 12B is a schematic diagram showing an example process of depositingan NIC in a pattern on an exposed layer surface that comprises thedeposited pattern of the NPC of FIG. 12A;

FIG. 12C is a schematic diagram showing an example process fordepositing a conductive coating in a pattern on an exposed layer surfacethat comprises the deposited pattern of the NIC of FIG. 12B;

FIGS. 13A-13C are schematic diagrams that show example stages of anexample printing process for depositing a selective coating in a patternon an exposed layer surface in an example version of the device of FIG.1 , according to an example in the present disclosure;

FIG. 14 is a schematic diagram illustrating, in plan view, an examplepatterned electrode suitable for use in a version of the device of FIG.1 , according to an example in the present disclosure;

FIG. 15 is a schematic diagram illustrating an example cross-sectionalview of the device of FIG. 14 taken along line 15-15;

FIG. 16A is a schematic diagram illustrating, in plan view, a pluralityof example patterns of electrodes suitable for use in an example versionof the device of FIG. 1 , according to an example in the presentdisclosure;

FIG. 16B is a schematic diagram illustrating an example cross-sectionalview, at an intermediate stage, of the device of FIG. 16A taken alongline 16B-16B;

FIG. 16C is a schematic diagram illustrating an example cross-sectionalview of the device of FIG. 16A taken along line 16C-16C;

FIG. 17 is a schematic diagram illustrating a cross-sectional view of anexample version of the device of FIG. 1 , having an example patternedauxiliary electrode according to an example in the present disclosure;

FIG. 18A is a schematic diagram illustrating, in plan view, an examplearrangement of emissive region(s) and/or non-emissive region(s) in anexample version of the device of FIG. 1 , according to an example in thepresent disclosure;

FIGS. 18B-18D are schematic diagrams each illustrating a segment of apart of FIG. 18A, showing an example auxiliary electrode overlaying anon-emissive region according to an example in the present disclosure;

FIG. 19 is a schematic diagram illustrating, in plan view an examplepattern of an auxiliary electrode overlaying at least one emissiveregion and at least one non-emissive region according to an example inthe present disclosure;

FIG. 20A is a schematic diagram illustrating, in plan view, an examplepattern of an example version of the device of FIG. 1 , having aplurality of groups of emissive regions in a diamond configurationaccording to an example in the present disclosure;

FIG. 20B is a schematic diagram illustrating an example cross-sectionalview of the device of FIG. 20A taken along line 20B-20B;

FIG. 20C is a schematic diagram illustrating an, example cross-sectionalview of the device of FIG. 20A taken along line 20C-20C;

FIG. 21 is a schematic diagram illustrating an example cross-sectionalview of an example version of the device of FIG. 4 with additionalexample deposition steps according to an example in the presentdisclosure;

FIG. 22 is a schematic diagram illustrating an example cross-sectionalview of an example version of the device of FIG. 4 with additionalexample deposition steps according to an example in the presentdisclosure;

FIG. 23 is a schematic diagram illustrating an example cross-sectionalview of an example version of the device of FIG. 4 with additionalexample deposition steps according to an example in the presentdisclosure;

FIG. 24 is a schematic diagram illustrating an example cross-sectionalview of an example version of the device of FIG. 4 with additionalexample deposition steps according to an example in the presentdisclosure;

FIGS. 25A-25C are schematic diagrams that show example stages of anexample process for depositing a conductive coating in a pattern on anexposed layer surface of an example version of the device of FIG. 1 , byselective deposition and subsequent removal process, according to anexample in the present disclosure;

FIG. 26A is a schematic diagram illustrating, in plan view, an exampleof a transparent version of the device of FIG. 1 comprising at least oneexample pixel region and at least one example light-transmissive region,with at least one auxiliary electrode according to an example in thepresent disclosure;

FIG. 26B is a schematic diagram illustrating an example cross-sectionalview of the device of FIG. 26A taken along line 26B-26B;

FIG. 27A is a schematic diagram illustrating, in plan view, an exampleof a transparent version of the device of FIG. 1 comprising at least oneexample pixel region and at least one example light-transmissive regionaccording to an example in the present disclosure;

FIG. 27B is a schematic diagram illustrating an example cross-sectionalview of the device of FIG. 27A taken along line 27B-27B;

FIG. 27C is a schematic diagram illustrating another examplecross-sectional view of the device of FIG. 27A taken along line 27B-27B;

FIGS. 28A-28D are schematic diagrams that show example stages of anexample process for manufacturing an example version of the device ofFIG. 1 to provide two emissive regions each having a second electrode ofdifferent thickness according to an example in the present disclosure;

FIGS. 29A-29D are schematic diagrams that show example stages of anexample process for manufacturing an example version of the device ofFIG. 1 having sub-pixel regions having a second electrode of differentthickness according to an example in the present disclosure;

FIG. 30 is a schematic diagram illustrating an example cross-sectionalview of an example version of the device of FIG. 1 in which a secondelectrode is coupled to an auxiliary electrode according to an examplein the present disclosure;

FIGS. 31A-31I are schematic diagrams that show various potentialbehaviours of an NIC at a deposition interface with a conductive coatingin an example version of the device of FIG. 1 , according to variousexamples in the present disclosure;

FIG. 32 is a schematic diagram that illustrates, in qualitative form, arelationship between example emission spectra for a pair of exampleemissive regions and plots of example refractive indices of respectivecapping layers overlying the emissive regions according to variousexamples in the present disclosure;

FIG. 33 is a schematic diagram that illustrates, in qualitative form, arelationship between the plots of the example refractive indices of FIG.32 , and respective plots of example extinction coefficients of therespective capping layers of FIG. 32 according to various examples inthe present disclosure;

FIG. 34 is a schematic diagram that illustrates, in qualitative form, arelationship between the example emission spectra of FIG. 32 , and therespective plots of example extinction coefficients of FIG. 33 accordingto various examples in the present disclosure;

FIG. 35 is a schematic diagram that illustrates a metallic coatingunderlying an NIC and/or a conductive coating according to an example inthe present disclosure;

FIGS. 36A-36B are schematic diagrams that show example stages of anexample process for manufacturing an example version of the device ofFIG. 1 subsequent to the stages of FIGS. 28A-28B;

FIGS. 37A-37E are schematic diagrams that show example stages of anexample process for manufacturing an example version of the device ofFIG. 1 to provide three emissive regions each having a second electrodeof different thickness according to an example in the presentdisclosure;

FIGS. 38A-38F are schematic diagrams that show example stages of anexample process for manufacturing an example version of the device ofFIG. 1 having sub-pixel regions having a second electrode of differentthickness according to an example in the present disclosure;

FIGS. 39A-39C are schematic diagrams that show example versions of thedevice of FIG. 1 according to an example in the present disclosure; and

FIG. 40 is a schematic diagram illustrating the formation of a filmnucleus according to an example in the present disclosure.

In the present disclosure, for purposes of explanation and notlimitation, specific details are set forth in order to provide athorough understanding of the present disclosure, including, withoutlimitation, particular architectures, interfaces and/or techniques. Insome instances, detailed descriptions of well-known systems,technologies, components, devices, circuits, methods and applicationsare omitted so as not to obscure the description of the presentdisclosure with unnecessary detail.

Further, it will be appreciated that block diagrams reproduced hereincan represent conceptual views of illustrative components embodying theprinciples of the technology.

Accordingly, the system and method components have been representedwhere appropriate by conventional symbols in the drawings, showing onlythose specific details that are pertinent to understanding the examplesof the present disclosure, so as not to obscure the disclosure withdetails that will be readily apparent to those of ordinary skill in theart having the benefit of the description herein.

Any drawings provided herein may not be drawn to scale and may not beconsidered to limit the present disclosure in any way.

Any feature or action shown in dashed outline may in some examples beconsidered as optional.

SUMMARY

It is an object of the present disclosure to obviate or mitigate atleast one disadvantage of the prior art.

The present disclosure discloses an opto-electronic device having aplurality of layers. A first capping layer (CPL) comprises a first CPLmaterial and is disposed in a first emissive region. A second CPLcomprises a second CPL material and is disposed in a second emissiveregion. The first emissive region is configured to emit photons having afirst wavelength spectrum that is characterized by a first onsetwavelength. The second emissive region is configured to emit photonshaving a second wavelength spectrum that is characterized by a secondonset wavelength. At least one of the first CPL and the first CPLmaterial (collectively “CPL(m)1”) exhibits a first absorption edge at afirst absorption edge wavelength that is shorter than the first onsetwavelength. At least one of the second CPL and the second CPL material(collectively “CPL(m)2”) exhibits a second absorption edge at a secondabsorption edge wavelength that is shorter than the second onsetwavelength.

According to a broad aspect of the present disclosure, there isdisclosed an opto-electronic device having a plurality of layers,comprising: a first capping layer (CPL) comprising a first CPL materialand disposed in a first emissive region, the first emissive regionconfigured to emit photons having a first wavelength spectrum that ischaracterized by a first onset wavelength; and a second CPL comprising asecond CPL material and disposed in a second emissive region, the secondemissive region configured to emit photons having a second wavelengthspectrum that is characterized by a second onset wavelength, wherein: atleast one of the first CPL and the first CPL material (CPL(m)1) exhibitsa first absorption edge at a first absorption edge wavelength that isshorter than the first onset wavelength; and at least one of the secondCPL and the second CPL material (CPL(m)2) exhibits a second absorptionedge at a second absorption edge wavelength that is shorter than thesecond onset wavelength.

In some non-limiting examples, the first onset wavelength may be shorterthan the second onset wavelength. In some non-limiting examples, thefirst absorption edge wavelength is shorter than the second absorptionedge wavelength.

In some non-limiting examples, the first absorption edge may becharacterized by a first extinction wavelength at which an extinctioncoefficient k of the CPL(m)1 equals a threshold value and the secondabsorption edge may be characterized by a second extinction wavelengthat which an extinction coefficient of the CPL(m)2 equals the thresholdvalue.

In some non-limiting examples, the first onset wavelength may be longerthan the first absorption edge wavelength by less than at least one ofabout 50 nm, about 40 nm, about 35 nm, about 30 nm, about 25 nm, about20 nm, about 15 nm, about 10 nm, about 5 nm, and about 3 nm. In somenon-limiting examples, the first extinction wavelength may be a longestone of at least one wavelength at which the extinction coefficient ofthe CPL(m)1 equals the threshold value. In some non-limiting examples, afirst derivative of the extinction coefficient of the CPL(m) as afunction of wavelength may be negative at the first extinctionwavelength. In some non-limiting examples, the extinction coefficient ofthe CPL(m)1 at a wavelength longer than the first extinction wavelengthmay be less than the threshold value. In some non-limiting examples, theextinction coefficient of the CPL(m)1 at all wavelengths longer than thefirst extinction wavelength may be less than the threshold value. Insome non-limiting examples, the extinction coefficient of the CPL(m)1 atany wavelength longer than the first onset wavelength may be less thanat least one of about 0.1, about 0.09, about 0.08, about 0.06, about0.05, about 0.03, about 0.01, about 0.005, and about 0.0001. In somenon-limiting examples, the extinction coefficient of the CPL(m)1 at awavelength shorter than the first absorption edge wavelength may exceedat least one of about 0.1, about 0.12, about 0.13, about 0.15, about0.18, about 0.2, about 0.25, about 0.3, about 0.5, about 0.7, about0.75, about 0.8, about 0.9, and about 1.0.

In some non-limiting examples, a refractive index of the CPL(m)1 for atleast one wavelength longer than the first absorption edge wavelengthmay exceed the refractive index of the CPL(m)1 for at least onewavelength shorter than the first absorption wavelength. In somenon-limiting examples, the refractive index of the CPL(m) in at leastone wavelength in the first wavelength spectrum may exceed at least oneof about 1.8, about 1.9, about 1.95, about 2, about 2.05, about 2.1,about 2.2, about 2.3, and about 2.5.

In some non-limiting examples, the second onset wavelength may be longerthan the second absorption edge wavelength by less than at least one ofabout 200 nm, about 150 nm, about 130 nm, about 100 nm, about 80 nm,about 70 nm, about 60 nm, about 50 nm, about 40 nm, about 35 nm, about25 nm, about 20 nm, about 15 nm, and about 10 n._In some non-limitingexamples, the second extinction wavelength may be a longest one of atleast one wavelength at which the extinction coefficient of the CPL(m)2equals the threshold value. In some non-limiting examples, a firstderivative of the extinction coefficient of the CPL(m)2 as a function ofwavelength may be negative at the second extinction wavelength. In somenon-limiting examples, the extinction coefficient of the CPL(m)2 at awavelength longer than the second extinction wavelength may be less thanthe threshold value. In some non-limiting examples, the extinctioncoefficient of the CPL(m)2 at all wavelengths longer than the secondextinction wavelength may be less than the threshold value. In somenon-limiting examples, the extinction coefficient of the CPL(m)2 at anywavelength longer than the second onset wavelength may be less than atleast one of about 0.1, about 0.09, about 0.08, about 0.06, about 0.05,about 0.03, about 0.01, about 0.005, and about 0.0001. In somenon-limiting examples, the extinction coefficient of the CPL(m)2 at awavelength shorter than the second absorption edge wavelength may exceedat least one of about 0.1, about 0.12, about 0.13, about 0.15, about0.18, about 0.2, about 0.25, about 0.3, about 0.5, about 0.7, about0.75, about 0.8, about 0.9, and about 1.0.

In some non-limiting examples, a refractive index of the CPL(m)2 for atleast one wavelength longer than the second absorption edge wavelengthmay exceed the refractive index of the CPL(m)2 for at least onewavelength shorter than the second absorption edge wavelength. IN somenon-limiting examples, the refractive index of the CPL(m)2 in at leastone wavelength in the second wavelength spectrum may exceed at least oneof about 1.8, about 1.9, about 1.95, about 2, about 2.05, about 2.1,about 2.2, about 2.3, and about 2.5.

In some non-limiting examples, the extinction coefficient of the CPL(m)1may be less than the threshold value at the second onset wavelength. Insome non-limiting examples, the extinction coefficient of the CPL(m)1may be less than the threshold value at all wavelengths in the secondwavelength spectrum. In some non-limiting examples, the extinctioncoefficient of the CPL(m)1 at any wavelength in the second wavelengthspectrum may be less than at least one of about 0.1, about 0.09, about0.08, about 0.05, about 0.05, about 0.03, about 0.01, about 0.005, andabout 0.001.

In some non-limiting examples, a refractive index of the CPL(m)1 for atleast one wavelength in the first wavelength spectrum may exceed therefractive index of the CPL(m)1 for at least one wavelength in thesecond wavelength spectrum. In some non-limiting examples, a refractiveindex of the CPL(m)2 for at least one wavelength in the secondwavelength spectrum may exceed the refractive index of the CPL(m)2 forat least one wavelength in the first wavelength spectrum. In somenon-limiting examples, a refractive index of the CPL(m)1 for at leastone wavelength of the second wavelength spectrum may be less than atleast one of about 1.8, about 1.7, about 1.65, about 1.6, about 1.5,about 1.45, about 1.4, and about 1.3. In some non-limiting examples, arefractive index of the CPL(m)2 in at least one wavelength of the firstwavelength spectrum may be less than at least one of about 1.8, about1.7, about 1.65, about 1.6, about 1.5, about 1.45, about 1.4, and about1.3.

In some non-limiting examples, the extinction coefficient of the CPL(m)2may exceed the extinction coefficient of the CPL(m)1 for at least onewavelength in the first wavelength spectrum. In some non-limitingexamples, the extinction coefficient of the CPL(m)2 may exceed theextinction coefficient of the CPL(m)1 for every wavelength in the firstwavelength spectrum.

In some non-limiting examples, the threshold value may be at least oneof 0.1, 0.09, 0.08, 0.06, 0.05, 0.03, 0.01, 0.005, and 0.001.

In some non-limiting examples, the first emissive region and the secondemissive region may occupy different regions of the device in a lateralaspect.

In some non-limiting examples, the first wavelength spectrum and thesecond wavelength spectrum lie in the visible spectrum. In somenon-limiting examples, the first wavelength spectrum may have a firstpeak wavelength and the second wavelength spectrum may have a secondpeak wavelength that is longer than the first peak wavelength.

In some non-limiting examples, the first onset wavelength may be ashortest one of at least one wavelength at which an intensity of thefirst wavelength spectrum may be at least one of about 20%, about 15%,about 10%, about 5%, about 3%, about 1%, and about 0.01% of an intensityat the first peak wavelength. In some non-limiting examples, the secondonset wavelength may be a shortest one of at least one wavelength atwhich an intensity of the second wavelength spectrum may be at least oneof about 20%, about 15%, about 10%, about 5%, about 3%, about 1%, andabout 0.01% of an intensity at the second peak wavelength.

In some non-limiting examples, the first wavelength spectrum maycorrespond to a colour that is at least one of B(lue) and G(reen). Insome non-limiting examples, the second wavelength spectrum maycorrespond to a colour that is at least one of R(ed) and G(reen). Insome non-limiting examples, the first wavelength spectrum may correspondto a colour that is B(lue) and the second wavelength spectrum maycorrespond to a colour that is at least one of G(reen) and R(ed). Insome non-limiting examples, the first wavelength spectrum may correspondto a colour that is G(reen) and the second wavelength spectrum maycorrespond to a colour that is R(ed).

In some non-limiting examples, the first CPL material may have adifferent composition from the second CPL material.

In some non-limiting examples, a thickness of the first CPL may be thesame as a thickness of the second CPL. In some non-limiting examples, athickness of the first CPL may be different from a thickness of thesecond CPL.

In some non-limiting examples, a thickness of the first CPL may be in arange of between about 5 to about 120 nm. In some non-limiting examples,a thickness of the first CPL may exceed at least one of about 10 nm,about 15 nm, about 20 nm, about 25 nm, about 30 nm, and about 40 nm. Insome non-limiting examples, a thickness of the first CPL may be lessthan at least one of about 100 nm, about 90 nm, about 80 nm, and about70 nm.

In some non-limiting examples, a thickness of the second CPL may be in arange of between about 5 nm to about 120 nm. In some non-limitingexamples, a thickness of the second CPL may exceed at least one of about10 nm, about 15 nm, about 20 nm, about 25 nm, about 30 nm, and about 40n. In some non-limiting examples, a thickness of the second CPL may beless than about 100 nm, about 90 nm, about 80 nm, and about 70 nm.

In some non-limiting examples, the device may further comprise at leastone electrode coating in the first emissive region and the secondemissive region. In some non-limiting examples, the first CPL may bedisposed on an exposed layer surface of the at least one electrodecoating. In some non-limiting examples, the second CPL may be disposedon an exposed layer surface of the at least one electrode coating. INsome non-limiting examples, the at least one electrode coating may havea first electrode thickness in the first emissive region. In somenon-limiting examples, the at least one electrode coating may have asecond electrode thickness in the second emissive region.

In some non-limiting examples, the first electrode thickness may be lessthan the second electrode thickness. In some non-limiting examples, aquotient of the first electrode thickness divided by the secondelectrode thickness may be less than at least one of about 0.9, about0.8, about 0.7, about 0.6, about 0.5, about 0.4, about 0.3, and about0.2. In some non-limiting examples, the first electrode thickness may bein a range that is at least one of about 5 nm to about 100 nm, about 5nm to about 50 nm, about 5 nm to about 25 nm, about 5 nm to about 20 nm,about 5 nm to about 15 nm, about 8 nm to about 15 nm, about 8 nm toabout 12 nm, and about 8 nm to about 10 nm. In some non-limitingexamples, the second electrode thickness may be in a range that is atleast one of about 10 nm to about 60 nm, about 10 nm to about 50 nm,about 15 nm to about 40 nm, about 15 nm to about 35 nm, and about 20 nmto about 35 nm.

In some non-limiting examples, the second electrode thickness may beless than the first electrode thickness. In some non-limiting examples,a quotient of the second electrode thickness divided by the firstelectrode thickness may be less than at least one of about 0.9, about0.8, about 0.7, about 0.6, about 0.5, about 0.4, about 0.3, and about0.2. In some non-limiting examples, the first electrode thickness may bein a range that is at least one of about 10 nm to about 60 nm, about 10nm to about 50 nm, about 15 nm to about 40 nm, about 15 nm to about 35nm, and about 20 nm to about 35 nm. In some non-limiting examples, thesecond electrode thickness may be in a range that is at least one ofabout t nm to about 100 nm, about 5 nm to about 50 nm, about 5 nm toabout 25 nm, about 5 nm to about 20 nm, about 5 nm to about 15 nm, about8 nm to about 15 nm, about 8 nm to about 12 nm, and about 8 nm to about10 nm.

In some non-limiting examples, the at least one electrode coating maycomprise a metallic coating and a conductive coating disposed on anexposed layer surface of the metallic coating. In some non-limitingexamples, the conductive coating may extend between the metallic coatingand the second CPL in the second emissive region. In some non-limitingexamples, the first CPL may be disposed on an exposed layer surface ofthe metallic coating in the first emissive region. In some non-limitingexamples, the conductive coating may extend between the metallic coatingand the first CPL in the first emissive region.

In some non-limiting examples, the metallic coating may be comprised ofa metallic coating material. In some non-limiting examples, the metalliccoating material may comprise a metal having a bond dissociation energyin a diatomic molecule thereof at 298K of at least one of at least 10kJ/mol, at least 50 kJ/mol, at least 100 kJ/mol, at least 150 kJ/mol, atleast 180 kJ/mol, and at least 200 kJ/mol. In some non-limitingexamples, the metallic coating material may comprise an element havingan electronegativity less than at least one of about 1.4, about 1.3, andabout 1.2.

In some non-limiting examples, the metallic coating material maycomprise an element selected from potassium (K), sodium (Na), lithium(Li), barium (Ba), cesium (Cs), ytterbium (Yb), silver (Ag), gold (Au),copper (Cu), aluminum (AI), magnesium (Mg), zinc (Zn), cadmium (Cd), tin(Sn), nickel (Ni), titanium (Ti), palladium (Pd), chromium (Cr), iron(Fe), cobalt (Co), zirconium (Zr), platinum (Pt), vanadium (V), niobium(Nb), iridium (Ir), osmium (Os), tantalum (Ta), molybdenum (Mo),tungsten (W), and any combination of any of these. In some non-limitingexamples, the element may be selected from Cu, Ag, Au, and anycombination of any of these. In some non-limiting examples, the elementmay be Cu. In some non-limiting examples, the element may be Al. In somenon-limiting examples, the element may be selected from Mg, Zn, Cd, Yb,and any combination of nay of these. In some non-limiting examples, theelement may be selected from Sn, Ni, Ti, Pd, Cr, Fe, Co, and anycombination of any of these. In some non-limiting examples, the elementmay be selected from Zr, Pt, V, Nb, Ir, Os, and any combination of anyof these. In some non-limiting examples, the element may be selectedfrom Ta, Mo, W, and any combination of any of these. In somenon-limiting examples, the element may be selected from Mg, Ag, Al, Yb,Li, and any combination of any of these. In some non-limiting examples,the element may be selected from any one of Mg, Ag, Al, Yb, and anycombination of any of these. In some non-limiting examples, the elementmay be selected from Mg, Ag, Yb, and any combination of any of these. Insome non-limiting examples, the element may be selected from Mg, Ag, andany combination of any of these. In some non-limiting examples, theelement may be Ag.

In some non-limiting examples, the metallic coating material maycomprise a pure metal. In some non-limiting examples, the pure metal maybe at least one of pure silver (Ag) and substantially pure Ag. In somenon-limiting examples, the pure metal may be at least one of puremagnesium (Mg) and substantially pure Mg. In some non-limiting examples,the pure metal may be at least one of pure aluminum (AI) andsubstantially pure Al.

In some non-limiting examples, the metallic coating material maycomprise an alloy. In some non-limiting examples, the alloy may be atleast one of a silver (Ag) containing alloy, and a silver-magnesium(AgMg)-containing alloy.

In some non-limiting examples, the metallic coating may comprise oxygen(O). In some non-limiting examples, the metallic coating may comprise Oand at least one metal. In some non-limiting examples, the metalliccoating may comprise a metal oxide. In some non-limiting examples, themetal oxide may comprise zinc (Zn), indium (I), tin (Sn), antimony (Sb),gallium (Ga), and any combination of any of these. In some non-limitingexamples, the metal oxide may be a transparent conducting oxide (TCO).In some non-limiting examples, the TCO may be at least one of indiumtitanium oxide (ITO), zinc oxide (ZnO), indium zinc oxide (IZO), indiumgallium zinc oxide (IGZO), and any combination of any of these.

In some non-limiting examples, the metallic coating may comprise aplurality of layers of the metallic coating material. In somenon-limiting examples, the metallic coating material of a first one ofthe plurality of layers may be different from the metallic coatingmaterial of a second one of the plurality of layers. In somenon-limiting examples, the metallic coating material of at least one ofthe plurality of layers may comprise ytterbium (Yb). In somenon-limiting examples, the metallic coating material of another one ofthe plurality of layers may comprise at least one of a silver(Ag)-containing alloy, and a silver-magnesium (AgMg)-containing alloy.In some non-limiting examples, the metallic coating material of anotherone of the plurality of layers may comprise at least one of pure silver(Ag), substantially pure (Ag), pure magnesium (Mg), substantially pureMg, and any combination of any of these. In some non-limiting examples,the metallic coating material of one of the plurality of layersproximate to the NIC comprises an element selected from silver (Ag),gold (Au), copper (Cu), aluminum (AI), tin (Sn), nickel (Ni), titanium(Ti), palladium (Pd), chromium (Cr), iron (Fe), cobalt (Co), zirconium(Zr), platinum (Pt), vanadium (V), niobium (Nb), iridium (Ir), osmium(Os), tantalum (Ta), molybdenum (Mo), tungsten (W), and any combinationof any of these. In some non-limiting examples, the element may compriseCu, Ag, Au, and any combination of any of these. In some non-limitingexamples, the element may be Cu. In some non-limiting examples, theelement may be Al. In some non-limiting examples, the element maycomprise Sn, Ti, Pd, Cr, Fe, Co, and any combination of any of these. Insome non-limiting examples, the element may comprise Ni, Zr, Pt, V, Nb,Ir, Os, and any combination of any of these. In some non-limitingexamples, the element may comprise Ta, Mo, W, and any combination of anyof these. In some non-limiting examples, the element may comprise Mg,Ag, Al, and any combination of any of these. In some non-limitingexamples, the element may comprise Mg, Ag, and any combination of any ofthese. In some non-limiting examples, the element may be Ag._In somenon-limiting examples, at least one of the plurality of layers maycomprise a metal having a work function that is less than about 4 eV.

In some non-limiting examples, the conductive coating may be comprisedof a conductive coating material In some non-limiting examples, theconductive coating material may comprise a metal having a bonddissociation energy in a diatomic molecule thereof at 298K of less than300 kJ/mol, less than 200 kJ/mol, less than 165 kJ/mol, less than 150kJ/mol, less than 100 kJ/mol, less than 50 kJ/mol, and less than 20kJ/mol.

In some non-limiting examples, the conductive coating material maycomprise an element selected from potassium (K), sodium (Na), lithium(Li), barium (Ba), cesium (Cs), ytterbium (Yb), silver (Ag), gold (Au),copper (Cu), aluminum (AI), magnesium (Mg), zinc (Zn), cadmium (Cd), tin(Sn), yttrium (Y), and any combination of any of these. In somenon-limiting examples, the element may be selected from K, Na, Li, Ba,Cs, Yb, Ag, Au, Cu, Al, Mg, and any combination of any of these. In somenon-limiting examples, the element may be selected from Cu, Ag, Au, andany combination of these. In some non-limiting examples, the element maybe Cu. In some non-limiting examples, the element may be Al. In somenon-limiting examples, the element may be selected from Mg, Zn, Cd, Yb,and any combination of any of these. In some non-limiting examples, theelement may be selected from Mg, Ag, Al, Yb, Li, and any combination ofany of these. In some non-limiting examples, the element may be selectedfrom Mg, Ag, Yb, and any combination of any of these. In somenon-limiting examples, the element may be selected from Mg, Ag, and anycombination of any of these. In some non-limiting examples, the elementmay be Ag.

In some non-limiting examples, the conductive coating material maycomprise a pure metal. In some non-limiting examples, the pure metal maybe at least one of pure silver (Ag), and substantially pure Ag. In somenon-limiting examples, the substantially pure Ag may have a purity of atleast one of at least about 95%, at least about 98%, at least about 99%,at least about 99.9%, at least about 99.99%, at least about 99.999%, andat least about 99.9995%. In some non-limiting examples, the pure metalmay be at least one of pure magnesium (Mg), and substantially pure Mg.IN some non-limiting examples, the substantially pure Mg may have apurity of at least one of at least about 95%, at least about 98%, atleast about 99%, at least about 99.9%, at least about 99.99%, at leastabout 99.999%, and at least about 99.9995%.

In some non-limiting examples, the conductive coating may comprise analloy. In some non-limiting examples, the alloy may be at least one of asilver (Ag) containing alloy, a magnesium (Mg) containing alloy, and anAgMg-containing alloy.

In some non-limiting examples, the conductive coating may comprise anon-metallic element. In some non-limiting examples, the non-metallicelement may be selected from at least one of oxygen (O), sulfur (S),nitrogen (N), carbon (C), and any combination of any of these. In somenon-limiting examples, a concentration of the non-metallic element inthe conductive coating material may be less than at least one of about1%, about 0.1%, about 0.01%, about 0.001%, about 0.0001%, about0.00001%, about 0.000001%, and about 0.0000001%.

In some non-limiting examples, the device may further comprise asemiconducting layer, wherein the at least one electrode coating extendsbetween the semiconducting layer and the first CPL in the first emissiveregion and between the semiconducting layer and the second CPL in thesecond emissive region. In some non-limiting examples, at least one ofthe first CPL and the second CPL may comprise a nucleation inhibitingcoating (NIC) for patterning the conductive coating.

In some non-limiting examples, the second CPL may be disposed in thefirst emissive region. In some non-limiting examples, the first CPL mayextend between the at least one electrode coating and the second CPL inthe first emissive region. In some non-limiting examples, the second CPLmay extend between the at least one electrode coating and the first CPLin the first emissive region.

In some non-limiting examples, the first CPL may be disposed in thesecond emissive region. In some non-limiting examples, the first CPL mayextend between the at least one electrode coating and the second CPL inthe second emissive region. In some non-limiting examples, the secondCPL may extend between the at least one electrode coating and the firstCPL in the second emissive region.

In some non-limiting examples, the device may further comprise a thirdemissive region configured to emit photons having a third wavelengthspectrum that is characterized by a third onset wavelength. In somenon-limiting examples, the third wavelength spectrum may have a thirdpeak wavelength that is shorter than a second peak wavelength of thesecond wavelength spectrum and longer than a first peak wavelength ofthe first wavelength spectrum. In some non-limiting examples, the firstwavelength spectrum may correspond to a colour that is B(lue), thesecond wavelength spectrum may correspond to a colour that is G(reen),and the third wavelength spectrum may correspond to a colour that isR(ed).

In some non-limiting examples, at least one of the first CPL and thesecond CPL may be disposed in the third emissive region. In somenon-limiting examples, a third CPL may be disposed in the third emissiveregion. In some non-limiting examples, at least one of the third CPL andthe third CPL material (CPL(m)3) may exhibit a third absorption edge ata third absorption edge wavelength that is shorter than the third onsetwavelength.

In some non-limiting examples, the third absorption edge may becharacterized by a third extinction wavelength at which an extinctioncoefficient of the CPL(m)3 equals a threshold value.

In some non-limiting examples, the third onset wavelength may be longerthan the absorption edge wavelength by less than at least one of about200 nm, about 150 nm, about 130 nm, about 100 nm, about 80 nm, about 70nm, about 60 nm, about 50 nm, about 40 nm, about 35 nm, about 25 nm,about 20 nm, about 15 nm, and about 10 nm. In some non-limitingexamples, the third extinction wavelength is a longest one of at leastone wavelength at which the extinction coefficient of the CPL(m)3 equalsthe threshold value. In some non-limiting examples, a first derivativeof the extinction coefficient of the CPL(m)3 as a function of wavelengthmay be negative at the third extinction wavelength. IN some non-limitingexamples, the extinction coefficient of the CPL(m)3 at a wavelengthlonger than the third extinction wavelength may be less than thethreshold value. In some non-limiting examples, the extinctioncoefficient of the CPL(m)3 at all wavelengths longer than the thirdextinction wavelength may be less than the threshold value. In somenon-limiting examples, the extinction coefficient of the CPL(m)3 at anywavelength longer than the third onset wavelength may be less than atleast one of about 0.1, about 0.09, about 0.08, about 0.06, about 0.05,about 0.03, about 0.01, about 0.005, and about 0.0001. In somenon-limiting examples, the extinction coefficient of the CPL(m)3 at awavelength shorter than the first absorption edge wavelength may exceedat least one of about 0.1, about 0.12, about 0.13, about 0.15, about0.18, about 0.2, about 0.25, about 0.3, about 0.5, about 0.7, about0.75, about 0.8, about 0.9, and about 1.0.

In some non-limiting examples, a refractive index of the CPL(m)3 for atleast one wavelength longer than the third absorption edge wavelengthmay exceed the refractive index of the CPL(m)3 for at least onewavelength shorter than the first absorption edge wavelength. In somenon-limiting examples, the refractive index of the CPL(m)3 in at leastone wavelength in the third wavelength spectrum may exceed at least oneof about 1.8, about 1.9, about 1.95, about 2, about 2.05, about 2.1,about 2.2, about 2.3, and about 2.5.

In some non-limiting examples, the third emissive region may besubstantially devoid of at least one of the first CPL and the secondCPL.

Examples have been described above in conjunctions with aspects of thepresent disclosure upon which they can be implemented. Those skilled inthe art will appreciate that examples may be implemented in conjunctionwith the aspect with which they are described, but may also beimplemented with other examples of that or another aspect. When examplesare mutually exclusive, or are otherwise incompatible with each other,it will be apparent to those having ordinary skill in the relevant art.Some examples may be described in relation to one aspect, but may alsobe applicable to other aspects, as will be apparent to those havingordinary skill in the relevant art.

Some aspects or examples of the present disclosure may provide anopto-electronic device having first and second emissive regions havingrespective emission spectra on which are deposited respective cappinglayers (CPLs), an optical property of which may be selected to modify atleast one optical microcavity effect of the underlying emissive regionThe CPLs may comprise a patterning coating having an initial stickingprobability for forming a conductive coating on a surface thereof thatis substantially less than the initial sticking probability for formingthe conductive coating on an underlying surface, such that the CPL issubstantially devoid of a subsequently deposited conductive coating.

DESCRIPTION Opto-Electronic Device

The present disclosure relates generally to electronic devices, and morespecifically, to opto-electronic devices. An opto-electronic devicegenerally encompasses any device that converts electrical signals intophotons and vice versa.

In the present disclosure, the terms “photon” and “light” may be usedinterchangeably to refer to similar concepts. In the present disclosure,photons may have a wavelength that lies in the visible light spectrum,in the infrared (IR) and/or ultraviolet (UV) region thereof.

In the present disclosure, the term “visible light spectrum” as usedherein, generally refers to at least one wavelength in the visible partof the electromagnetic spectrum. In some non-limiting examples, thevisible light spectrum may correspond to a wavelength range of about 380nm to about 750 nm.

In the present disclosure, the term “emission spectrum” (ES) as usedherein, and as shown by way of non-limiting example in FIG. 32 as a plotof intensity (I) as a function of wavelength (A), generally refers to anelectroluminescence spectrum of light emitted by an opto-electronicdevice. By way of non-limiting example, an emission spectrum (ES) may bedetected using an optical instrument, such as, by way of non-limitingexample, a spectrophotometer, which measure an intensity (I) ofelectromagnetic radiation across a wavelength range.

In the present disclosure, the term “onset wavelength” λ_(onset), asused herein, and as shown by way of non-limiting example in FIG. 32 ,generally refers to a shortest wavelength at which an emission isdetected within an emission spectrum.

In the present disclosure, the term “peak wavelength” λ_(max), as usedherein, and as shown by way of non-limiting example in FIG. 32 ,generally refers to a wavelength at which the maximum luminance isdetected within an emission spectrum. Those having ordinary skill in therelevant art will appreciate that luminance may be measured in units ofcandelas (cd) (a measure of luminous intensity per square area), inunits of cd/m² or nits. In some non-limiting examples of opto-electronicdevices in which the emission spectrum varies with viewing angle (i.e.the angle at which the emission spectrum is measured), the emissionspectrum taken at a normal angle to a plane of the device may be usedfor determining various characteristics of the emission, includingwithout limitation, the maximum luminance and/or peak wavelength λ_(max)thereof.

In general, the onset wavelength λ_(onset) occurs at a shorterwavelength than the peak wavelength λ_(max). In some non-limitingexamples, the onset wavelength λ_(onset) may correspond to a wavelengthwithin the emission spectrum at which the luminance is at a thresholdintensity (I_(onset)), as shown generally by way of non-limiting examplein FIG. 32 , which in some non-limiting examples, may be at about 10%,about 5%, about 3%, about 1%, about 0.5%, about 0.1%, or about 0.01%, ofthe luminance at the peak wavelength λ_(max).

In general, electro-luminescent devices are configured to emit and/ortransmit light having wavelengths in a range from about 425 nm to about725 nm, and more specifically, in some non-limiting examples, lighthaving peak emission wavelengths of 456 nm, 528 nm, and 624 nm,corresponding to B(lue) 2543, G(reen) 2542, and R(ed) 2541 sub-pixels,respectively. Accordingly, in the context of such electro-luminescentdevices, the emission spectrum may to any wavelengths or wavelengthranges from about 425 nm to about 725 nm, or from about 456 nm to about624 nm. Photons having a wavelength in the visible light spectrum may,in some non-limiting examples, also be referred to as “visible light”herein.

In some non-limiting examples, an emission spectrum that lies in theR(ed) portion of the visible light spectrum may be characterized by apeak wavelength λ_(max) that may lie in a wavelength range of 600 nm toabout 640 nm and in some non-limiting examples, may be substantiallyabout 620 nm. The corresponding onset wavelength λ_(onset) may lie in awavelength range of about 500 nm to about 610 nm, about 575 nm to about600 nm, about 570 nm to about 580 nm, or about 580 nm to about 590 nm.

In some non-limiting examples, an emission spectrum that lies in theG(reen) portion of the visible light spectrum may be characterized by apeak wavelength λ_(max) that may lie in a wavelength range of 510 nm toabout 540 nm and in some non-limiting examples, may be substantiallyabout 530 nm. The corresponding onset wavelength λ_(onset) may lie in awavelength range of about 470 nm to about 520 nm, about 480 nm to about510 nm, about 480 nm to about 490 nm, or about 490 to about 500 nm.

In some non-limiting examples, an emission spectrum that lies in theB(lue) portion of the visible light spectrum may be characterized by apeak wavelength λ_(max) that may lie in a wavelength range of 450 nm toabout 460 nm and in some non-limiting examples, may be substantiallyabout 455 nm. The corresponding onset wavelength λ_(onset) may lie in awavelength range of about 420 nm to about 450 nm, about 425 nm to about440 nm, about 420 nm to about 430 nm, or about 430 nm to about 440 nm.

In the present disclosure, the term “IR signal” as used herein,generally refers to EM radiation having a wavelength in an IR portion ofthe EM spectrum. An IR signal may, in some non-limiting examples, have awavelength corresponding to a near-infrared (NIR) subset thereof. By wayof non-limiting examples, an NIR signal may have a wavelength of about750 nm to about 1400 nm, about 750 nm to about 1300 nm, about 800 nm toabout 1300 nm, about 800 nm to about 1200 nm, about 850 nm to about 1100nm, and/or about 900 nm to about 1000 nm.

In the present disclosure, the term “absorption spectrum”, as usedherein, generally refers a wavelength (sub-)range of the EM spectrumover which absorption occurs.

In the present disclosure, the term “extinction coefficient” (k) as usedherein, and as shown generally by way of non-limiting example in FIG. 33, refers to the degree to which an electromagnetic coefficient isattenuated when propagating through a material. In some non-limitingexamples, the extinction coefficient may be understood to correspond tothe imaginary component k of a complex refractive index N. In somenon-limiting examples, the extinction coefficient of a material may bemeasured by a variety of methods, including without limitation, byellipsometry.

In the present disclosure, the terms “refractive index” (n) and/or“index”, as used herein to describe a medium, and as shown generally byway of non-limiting example in FIG. 32 , refer to a value calculatedfrom a ratio of the speed of light in such medium relative to the speedof light in a vacuum. In the present disclosure, particularly when usedto describe the properties of substantially transparent materials,including without limitation, thin film layers and/or coatings, theterms may correspond to the real part, n, in the expression N=n+ik, inwhich N represents the complex refractive index and k represents theextinction coefficient.

As would be appreciated by those having ordinary skill in the relevantart, substantially transparent materials, including without limitation,thin film layers and/or coatings, generally exhibit a relatively low kvalue in the visible light spectrum, and therefore the imaginarycomponent of the expression may have a negligible contribution to thecomplex refractive index, N. On the other hand, light-transmissiveelectrodes formed, for example, by a metallic thin film, may exhibit arelatively low n value and a relatively high k value in the visiblelight spectrum. Accordingly, the complex refractive index, N, of suchthin films may be dictated primarily by its imaginary component.

In the present disclosure, unless the context dictates otherwise,reference without specificity to a refractive index is intended to be areference to the real part n of the complex refractive index N.

In the present disclosure, the terms “absorption edge” (AE), “absorptiondiscontinuity” and/or “absorption limit” as used herein, and as shown byway of non-limiting example in FIG. 33 , generally refers to a rapiddecrease in the extinction coefficient k and/or absorption spectrum of acoating, layer, and/or material. In the present disclosure, the“absorption edge” as described, for example, in relation to a cappinglayer (CPL) 3610, refers to the longest wavelength, for example, withinthe visible spectrum, at which a rapid decrease in the extinctioncoefficient k of the CPL 3610 is observed. In some non-limitingexamples, the extinction coefficient k of a CPL 3610, particularly inthe visible spectrum, may diminish toward zero, and remain low acrossthe remainder of the visible spectrum. In such non-limiting examples,the absorption edge of a CPL 3610 may correspond to the wavelength, orthe longest wavelength, at which the extinction coefficient k passes athreshold value TAE, as shown generally by way of non-limiting examplein FIG. 33 , as it diminishes towards zero. In some non-limitingexamples, the absorption edge of a CPL 3610 may correspond to thewavelength, or the longest wavelength, at which the extinctioncoefficient k passes the threshold value TAE with a first derivative ofthe extinction coefficient k as a function of wavelength A that isnegative.

In some non-limiting examples, there may be a generally positivecorrelation between refractive index n and transmittance, or in otherwords, a generally negative correlation between refractive index n andabsorption at or near the absorption edge. In some non-limitingexamples, the absorption edge of a substance may correspond to awavelength at which the extinction coefficient k approaches a thresholdvalue near 0.

An organic opto-electronic device can encompass any opto-electronicdevice where one or more active layers and/or strata thereof are formedprimarily of an organic (carbon-containing) material, and morespecifically, an organic semiconductor material.

In the present disclosure, it will be appreciated by those havingordinary skill in the relevant art that an organic material, maycomprise, without limitation, a wide variety of organic molecules,and/or organic polymers. Further, it will be appreciated by those havingordinary skill in the relevant art that organic materials that are dopedwith various inorganic substances, including without limitation,elements and/or inorganic compounds, may still be considered to beorganic materials. Still further, it will be appreciated by those havingordinary skill in the relevant art that various organic materials may beused, and that the processes described herein are generally applicableto an entire range of such organic materials. Still further, it will beappreciated by those having ordinary skill in the relevant art thatorganic materials that contain metals and/or other inorganic elements,may still be considered as organic materials. Still further, it will beappreciated by those having ordinary skill in the relevant art thatvarious organic materials may be molecules, oligomers, and/or polymers.

In the present disclosure, an inorganic substance may refer to asubstance that primarily includes an inorganic material. In the presentdisclosure, an inorganic material may comprise any material that is notconsidered to be an organic material, including without limitation,metals, glasses and/or minerals.

Where the opto-electronic device emits photons through a luminescentprocess, the device may be considered an electro-luminescent device. Insome non-limiting examples, the electro-luminescent device may be anorganic light-emitting diode (OLED) device. In some non-limitingexamples, the electro-luminescent device may be part of an electronicdevice. By way of non-limiting example, the electro-luminescent devicemay be an OLED lighting panel or module, and/or an OLED display ormodule of a computing device, such as a smartphone, a tablet, a laptop,an e-reader, and/or of some other electronic device such as a monitorand/or a television set (collectively “user device”).

In some non-limiting examples, the opto-electronic device may be anorganic photo-voltaic (OPV) device that converts photons intoelectricity. In some non-limiting examples, the opto-electronic devicemay be an electro-luminescent quantum dot device. In the presentdisclosure, unless specifically indicated to the contrary, referencewill be made to OLED devices, with the understanding that suchdisclosure could, in some examples, equally be made applicable to otheropto-electronic devices, including without limitation, an OPV and/orquantum dot device in a manner apparent to those having ordinary skillin the relevant art.

The structure of such devices will be described from each of twoaspects, namely from a cross-sectional aspect and/or from a lateral(plan view) aspect.

In the present disclosure, the terms “layer” and “strata” may be usedinterchangeably to refer to similar concepts.

In the context of introducing the cross-sectional aspect below, thecomponents of such devices are shown in substantially planar lateralstrata. Those having ordinary skill in the relevant art will appreciatethat such substantially planar representation is for purposes ofillustration only, and that across a lateral extent of such a device,there may be localized substantially planar strata of differentthicknesses and dimension, including, in some non-limiting examples, thesubstantially complete absence of a layer, and/or layer(s) separated bynon-planar transition regions (including lateral gaps and evendiscontinuities). Thus, while for illustrative purposes, the device isshown below in its cross-sectional aspect as a substantially stratifiedstructure, in the plan view aspect discussed below, such device mayillustrate a diverse topography to define features, each of which maysubstantially exhibit the stratified profile discussed in thecross-sectional aspect.

Cross-Sectional Aspect

FIG. 1 is a simplified block diagram from a cross-sectional aspect, ofan example electro-luminescent device according to the presentdisclosure. The electro-luminescent device, shown generally at 100comprises a plurality of layers, including without limitation, asubstrate 110, upon which a frontplane 10, comprising a plurality oflayers, respectively, a first electrode 120, at least one semiconductinglayer 130, and a second electrode 140, are disposed. In somenon-limiting examples, the frontplane 10 may provide mechanisms forphoton emission and/or manipulation of emitted photons. In somenon-limiting examples, a barrier coating 1650 (FIG. 16C) may be providedto surround and/or encapsulate the layers 120, 130, 140 and/or thesubstrate 110 disposed thereon.

For purposes of illustration, an exposed layer surface of underlyingmaterial is referred to as 111. In FIG. 1 , the exposed layer surface111 is shown as being of the second electrode 140. Those having ordinaryskill in the relevant art will appreciate that, at the time ofdeposition of, by way of non-limiting example, the first electrode 120,the exposed layer surface 111 would have been shown as 111 a, of thesubstrate 110.

Those having ordinary skill in the relevant art will appreciate thatwhen a component, a layer, a region and/or portion thereof is referredto as being “formed”, “disposed” and/or “deposited” on and/or overanother underlying material, component, layer, region and/or portion,such formation, disposition and/or deposition may be directly and/orindirectly on an exposed layer surface 111 (at the time of suchformation, disposition and/or deposition) of such underlying material,component, layer, region and/or portion, with the potential ofintervening material(s), component(s), layer(s), region(s) and/orportion(s) therebetween.

In the present disclosure, a directional convention is followed,extending substantially normally relative to the lateral aspectdescribed above, in which the substrate 110 is considered to be the“bottom” of the device 100, and the layers 120, 130, 140 are disposed on“top” of the substrate 11. Following such convention, the secondelectrode 140 is at the top of the device 100 shown, even if (as may bethe case in some examples, including without limitation, during amanufacturing process, in which one or more layers 120, 130, 140 may beintroduced by means of a vapor deposition process), the substrate 110 isphysically inverted such that the top surface, on which one of thelayers 120, 130, 140, such as, without limitation, the first electrode120, is to be disposed, is physically below the substrate 110, so as toallow the deposition material (not shown) to move upward and bedeposited upon the top surface thereof as a thin film.

In some non-limiting examples, the device 100 may be electricallycoupled to a power source 15. When so coupled, the device 100 may emitphotons as described herein.

In some non-limiting examples, the device 100 may be classifiedaccording to a direction of emission of photons generated therefrom. Insome non-limiting examples, the device 100 may be considered to be abottom-emission device if the photons generated are emitted in adirection toward and through the substrate 100 at the bottom of thedevice 100 and away from the layers 120, 130, 140 disposed on top of thesubstrate 110. In some non-limiting examples, the device 100 may beconsidered to be a top-emission device if the photons are emitted in adirection away from the substrate 110 at the bottom of the device 100and toward and/or through the top layer 140 disposed, with intermediatelayers 120, 130, on top of the substrate 110. In some non-limitingexamples, the device 100 may be considered to be a double-sided emissiondevice if it is configured to emit photons in both the bottom (towardand through the substrate 110) and top (toward and through the top layer140).

Thin Film Formation

The frontplane 10 layers 120, 130, 140 may be disposed in turn on atarget exposed layer surface 111 (and/or, in some non-limiting examples,including without limitation, in the case of selective depositiondisclosed herein, at least one target region and/or portion of suchsurface) of an underlying material, which in some non-limiting examples,may be, from time to time, the substrate 110 and intervening lowerlayers 120, 130, 140, as a thin film. In some non-limiting examples, anelectrode 120, 140, 1750, 4150 may be formed of at least one thinconductive film layer of a conductive coating 830 (FIG. 8 ). It will beunderstood by those having ordinary skill in the relevant art that suchconductive coating 830 may be (at least) one of the plurality of layersof the device 100. The conductive coating 830 may be comprised of aconductive coating material 831. Those having ordinary skill in therelevant art will appreciate that the conductive coating 830 and theconductive coating material 831 of which it is comprised, especiallywhen disposed as a film and under conditions and/or by mechanismssubstantially similar to those employed in depositing the conductivecoating 830, may exhibit largely similar optical and/or otherproperties.

The thickness of each layer, including without limitation, layers 120,130, 140, and of the substrate 110, shown in FIG. 1 , and throughout thefigures, is illustrative only and not necessarily representative of athickness relative to another layer 120, 130, 140 (and/or of thesubstrate 110).

In the present disclosure, for purposes of simplicity of description,the terms “coating film”, “closed coating”, and/or “closed film” 4530,as used herein, refer to a thin film structure and/or coating of, insome non-limiting examples, a conductive coating material 831 used for aconductive coating 830, in which a relevant portion of a surface issubstantially coated thereby, such that such surface is notsubstantially exposed by or through the closed film 4530 depositedthereon.

In the present disclosure, unless the context dictates otherwise,reference without specificity to a thin film is intended to be areference to a substantially closed film 4530.

In some non-limiting examples, a closed film 4530, in some non-limitingexamples, of a conductive coating material 831, may be disposed to covera portion of an underlying surface, such that, within such portion, lessthan about 20%, less than about 15%, less than about 10%, less thanabout 5%, less than about 3%, or less than about 1% of the underlyingsurface therewithin is exposed by or through the closed film 4530.

Those having ordinary skill in the relevant art will appreciate that aclosed film 4530 may be patterned using various techniques andprocesses, including without limitation, those described herein, so asto deliberately leave a part of the exposed layer surface 111 of theunderlying surface to be exposed after deposition of the closed film4530. In the present disclosure, such patterned films may neverthelessbe considered to constitute a closed film 4530, if, by way ofnon-limiting example, the thin film and/or coating that is deposited,within the context of such patterning, and between such deliberatelyexposed parts of the exposed layer surface 111 of the underlyingsurface, itself substantially comprises a closed film 4530.

Those having ordinary skill in the relevant art will appreciate that dueto the inherent variability in the deposition process, and in somenon-limiting examples, to the existence of impurities in either or bothof the deposited materials, in some non-limiting examples, theconductive coating material 831, and the exposed layer surface 111 ofthe underlying material, deposition of a thin film, using varioustechniques and processes, including without limitation, those describedherein, may nevertheless result in the formation of small apertures,including without limitation, pin-holes, tears, and/or cracks, therein.In the present disclosure, such thin films may nevertheless beconsidered to constitute a closed film 4530, if, by way of non-limitingexample, the thin film and/or coating that is deposited substantiallycomprises a closed film 4530 and meets the percentage coverage criterionset out above, despite the presence of such apertures.

With continued vapor deposition of monomers (which in some non-limitingexamples may be molecules and/or atoms of a deposited material in vaporform) a substantially closed film 4530 may eventually be deposited on anexposed layer surface 111 of an underlying material. The behaviour,including optical effects caused thereby, of such closed films 4530 aregenerally relatively consistent and unsurprising.

In some non-limiting examples, the behaviour, including optical effectsthereof, of thin films that comprise at least one closed film 4530 aregenerally relatively uniform.

While the present disclosure discusses thin film formation, in referenceto at least one layer or coating, in terms of vapor deposition, thosehaving ordinary skill in the relevant art will appreciate that, in somenon-limiting examples, various components of the electro-luminescentdevice 100 may be selectively deposited using a wide variety oftechniques, including without limitation, evaporation (including withoutlimitation, thermal evaporation and/or electron beam evaporation),photolithography, printing (including without limitation, inkjet and/orvapor jet printing, reel-to-reel printing and/or micro-contact transferprinting), physical vapor deposition (PVD) (including withoutlimitation, sputtering), chemical vapor deposition (CVD) (includingwithout limitation, plasma-enhanced CVD (PECVD) and/or organic vaporphase deposition (OVPD)), laser annealing, laser-induced thermal imaging(LITI) patterning, atomic-layer deposition (ALD), coating (includingwithout limitation, spin coating, dip coating, line coating and/or spraycoating) and/or combinations thereof. Some processes may be used incombination with a shadow mask, which may, in some non-limitingexamples, be an open mask and/or fine metal mask (FMM), duringdeposition of any of various layers and/or coatings to achieve variouspatterns by masking and/or precluding deposition of a deposited materialon certain parts of a surface of an underlying material exposed thereto.

In the present disclosure, the terms “evaporation” and/or “sublimation”may be used interchangeably to refer generally to deposition processesin which a source material is converted into a vapor, including withoutlimitation by heating, to be deposited onto a target surface in, withoutlimitation, a solid state. As will be understood, an evaporation processis a type of PVD process where one or more source materials areevaporated and/or sublimed under a low pressure (including withoutlimitation, a vacuum) environment to form vapor monomers and depositedon a target surface through de-sublimation of the one or more evaporatedsource materials. A variety of different evaporation sources may be usedfor heating a source material, and, as such, it will be appreciated bythose having ordinary skill in the relevant art, that the sourcematerial may be heated in various ways. By way of non-limiting example,the source material may be heated by an electric filament, electronbeam, inductive heating, and/or by resistive heating. In somenon-limiting examples, the source material may be loaded into a heatedcrucible, a heated boat, a Knudsen cell (which may be an effusionevaporator source) and/or any other type of evaporation source.

In some non-limiting examples, a deposition source material may be amixture. In some non-limiting examples, at least one component of amixture of a deposition source material may not be deposited during thedeposition process (or, in some non-limiting examples, be deposited in arelatively small amount compared to other components of such mixture).

In the present disclosure, a reference to a layer thickness of amaterial, irrespective of the mechanism of deposition thereof, refers toan amount of the material deposited on a target exposed layer surface111, which corresponds to an amount of the material to cover the targetsurface with a uniformly thick layer of the material having thereferenced layer thickness. By way of non-limiting example, depositing alayer thickness of 10 nm of material indicates that an amount of thematerial deposited on the surface corresponds to an amount of thematerial to form a uniformly thick layer of the material that is 10 nmthick. It will be appreciated that, having regard to the mechanism bywhich thin films are formed discussed above, by way of non-limitingexample, due to possible stacking or clustering of monomers (which insome non-limiting examples may be molecules and/or atoms), an actualthickness of the deposited material may be non-uniform. By way ofnon-limiting example, depositing a layer thickness of 10 nm may yieldsome parts of the deposited material having an actual thickness greaterthan 10 nm, or other parts of the deposited material having an actualthickness less than 10 nm. A certain layer thickness of a materialdeposited on a surface may thus correspond, in some non-limitingexamples, to an average thickness of the deposited material across thetarget surface, including without limitation, as a closed film 4530.

In the present disclosure, a reference to a reference layer thicknessrefers to a layer thickness of the conductive coating 830, also referredto herein as the conductive coating material 831, that is deposited on areference surface exhibiting a high initial sticking probability orinitial sticking coefficient S₀ (that is, a surface having an initialsticking probability S₀ that is about and/or close to 1). The referencelayer thickness does not indicate an actual thickness of the conductivecoating material 831 deposited on a target surface (such as, withoutlimitation, a surface of a nucleation-inhibiting coating (NIC) 810).

It will be understood by those having ordinary skill in the relevant artthat such NIC 810 may be (at least) one of the plurality of layers ofthe device 100. The NIC 810 may be comprised of an NIC material. Thosehaving ordinary skill in the relevant art will appreciate that the NIC810 and the NIC material of which it is comprised, especially whendisposed as a film and under conditions and/or by mechanismssubstantially similar to those employed in depositing the NIC 810, mayexhibit largely similar optical and/or other properties.

Rather, the reference layer thickness refers to a layer thickness of theconductive coating material 831 that would be deposited on a referencesurface, in some non-limiting examples, a surface of a quartz crystalpositioned inside a deposition chamber for monitoring a deposition rateand the reference layer thickness, upon subjecting the target surfaceand the reference surface to identical vapor flux of the conductivecoating material 831 for the same deposition period. Those havingordinary skill in the relevant art will appreciate that in the eventthat the target surface and the reference surface are not subjected toidentical vapor flux simultaneously during deposition, an appropriatetooling factor may be used to determine and/or to monitor the referencelayer thickness.

In the present disclosure, a reference to depositing a number X ofmonolayers of material refers to depositing an amount of the material tocover a desired area of an exposed layer surface 111 with X singlelayer(s) of constituent monomers of the material, such as, withoutlimitation, in a closed film 4530.

The formation of thin films during vapor deposition on an exposed layersurface 111 of an underlying material involves processes of nucleationand growth. During initial stages of film formation, a sufficient numberof vapor monomers (which in some non-limiting examples may be moleculesand/or atoms) typically condense from a vapor phase to form initialnuclei on the exposed layer surface 111 presented, whether of thesubstrate 110 (or of an intervening lower layer 120, 130, 140). As vapormonomers continue to impinge on such surface, a size and density ofthese initial nuclei increase to form small clusters or islands. Afterreaching a saturation island density, adjacent islands typically willstart to coalesce, increasing an average island size, while decreasingan island density. Coalescence of adjacent islands may continue until asubstantially closed film 4530 is formed.

However, prior to the formation of a substantially closed film 4530, thedeposition of vapor monomers may result in thin film structures,described herein, which may exhibit one or more varied characteristicsand concomitantly, varied behaviours, including without limitation,optical effects.

In the present disclosure, a reference to depositing a fraction 0.Xmonolayer of a material refers to depositing an amount of the materialto cover a fraction 0.X of a desired area of a surface with a singlelayer of constituent monomers of the material. Those having ordinaryskill in the relevant art will appreciate that due to, by way ofnon-limiting example, possible stacking and/or clustering of monomers,an actual local thickness of a deposited material across a desired areaof a surface may be non-uniform. By way of non-limiting example,depositing 1 monolayer of a material may result in some local regions ofthe desired area of the surface being uncovered by the material, whileother local regions of the desired area of the surface may have multipleatomic and/or molecular layers deposited thereon.

In the present disclosure, a target surface (and/or target region(s)thereof) may be considered to be “substantially devoid of”,“substantially free of”, and/or “substantially uncovered by” a materialif there is a substantial absence of the material on the target surfaceas determined by any suitable determination mechanism.

In the present disclosure, for purposes of simplicity of description,the result of deposition of vapor monomers onto an exposed layer surface111 of an underlying material, that has not (yet) reached a stage wherea closed film 4530 has been formed, will be referred to as a “clusteringlayer”. In some non-limiting examples, such a clustering layer mayreflect that the deposition process has not been completed, in whichsuch a clustering layer may be considered as an interim stage offormation of a closed film 4530. In some non-limiting examples, aclustering layer may be the result of a completed deposition process,and thus constitute a final stage of formation in and of itself.

In the present disclosure, for purposes of simplicity of description,the term “discontinuous coating” 1050 as used herein, refers to aclustering layer, in which a relevant portion of the exposed layersurface 111 of an underlying material coated by the deposition process,is neither substantially devoid of such material, nor forms a closedfilm 4530 thereof. In some non-limiting examples, a discontinuouscoating 1050 of a conductive coating material 831 may manifest as aplurality of discrete islands deposited on such surface.

In the present disclosure, for purposes of simplicity of description,the term “dendritic”, with respect to a coating, including withoutlimitation, the conductive coating 830, refers to feature(s) thatresemble a branched structure when viewed in a lateral aspect. In somenon-limiting examples, the conductive coating 830 may comprise adendritic projection 1021 and/or a dendritic recess 1022. In somenon-limiting examples, a dendritic projection 1021 may correspond to apart of the conductive coating 830 that exhibits a branched structurecomprising a plurality of short projections that are physicallyconnected and extend substantially outwardly. In some non-limitingexamples, a dendritic recess 1022 may correspond to a branched structureof gaps, openings, and/or uncovered parts of the conductive coating 830that are physically connected and extend substantially outwardly. Insome non-limiting examples, a dendritic recess 1022 may correspond to,including without limitation, a mirror image and/or inverse pattern, tothe pattern of a dendritic projection 1021. In some non-limitingexamples, a dendritic projection 1021 and/or a dendritic recess 1022 mayhave a configuration that exhibits, and/or mimics a fractal pattern, amesh, a web, and/or an interdigitated structure.

In some non-limiting examples, there may be a clustering layer thatreflects an intermediate stage in the deposition of vapor monomers,beyond formation of a discontinuous coating 1050, but prior to formationof a closed film 4530, in which continued coalescence of clusters and/orislands 5001, 5002 continues until the number of clusters and/or islands5001, 5002 remaining approaches zero. Where such an intermediate stageclustering layer is reached, the deposited monomers may in somenon-limiting examples form an intermediate stage thin film that maycomprise a fraction 0.X of a single monolayer, such that it is not aclosed film 4530, in that there may be apertures and/or gaps in the filmcoverage, including without limitation, one or more dendriticprojections 1021, and/or one or more dendritic recesses 1022, yetremains substantially conductive.

There may be at least three basic growth modes for the formation of thinfilms, initially as clustering layers and, in some non-limitingexamples, culminating in a closed film 4530: 1) island (Volmer-Weber),2) layer-by-layer (Frank-van der Merwe), and 3) Stranski-Krastanov.

In the present disclosure, the terms “island” and “cluster” may be usedinterchangeably to refer to similar concepts.

Island growth typically occurs when stale clusters of monomers nucleateon a surface and grow to form discrete islands. This growth mode occurswhen the interactions between the monomers is stronger than that betweenthe monomers and the surface.

The nucleation rate describes how many nuclei of a given size (where thefree energy does not push a cluster of such nuclei to either grow orshrink) (“critical nuclei”) form on a surface per unit time. Duringinitial stages of film formation, it is unlikely that nuclei will growfrom direct impingement of monomers on the surface, since the density ofnuclei is low, and thus the nuclei cover a relatively small fraction ofthe surface (e.g. there are large gaps/spaces between neighboringnuclei). Therefore, the rate at which critical nuclei grow typicallydepends on the rate at which adatoms (e.g. adsorbed monomers) on thesurface migrate and attach to nearby nuclei.

An example of an energy profile of an adatom adsorbed onto an exposedlayer surface 111 of an underlying material (in the figure, thesubstrate 110) is illustrated in FIG. 6 . Specifically, FIG. 6illustrates example qualitative energy profiles corresponding to: anadatom escaping from a local low energy site (610); diffusion of theadatom on the exposed layer surface 111 (620); and desorption of theadatom (630).

In 610, the local low energy site may be any site on the exposed layersurface 111 of an underlying material, onto which an adatom will be at alower energy. Typically, the nucleation site may comprise a defectand/or an anomaly on the exposed layer surface 111, including withoutlimitation, a step edge, a chemical impurity, a bonding site and/or akink. Once the adatom is trapped at the local low energy site, there mayin some non-limiting examples, typically be an energy barrier beforesurface diffusion takes place. Such energy barrier is represented as AE611 in FIG. 6 . In some non-limiting examples, if the energy barrier AE611 to escape the local low energy site is sufficiently large the sitemay act as a nucleation site.

In 620, the adatom may diffuse on the exposed layer surface 111. By wayof non-limiting example, in the case of localized absorbates, adatomstend to oscillate near a minimum of the surface potential and migrate tovarious neighboring sites until the adatom is either desorbed, and/or isincorporated into a growing film and/or growing islands formed by acluster 5001, 5002 of adatoms. In FIG. 6 , the activation energyassociated with surface diffusion of adatoms is represented as ES 621.

In 630, the activation energy associated with desorption of the adatomfrom the surface is represented as E_(des) 631. Those having ordinaryskill in the relevant art will appreciate that any adatoms that are notdesorbed may remain on the exposed layer surface 111. By way ofnon-limiting example, such adatoms may diffuse on the exposed layersurface 111, be incorporated as part of a growing film and/or coating,and/or become part of a cluster 5001, 5002 of adatoms that form islandson the exposed layer surface 111.

After adsorption of an adatom on a surface, the adatom may either desorbfrom the surface, or may migrate some distance on the surface beforeeither desorbing, interacting with other adatoms to form a smallcluster, or attaching to a growing nucleus. An average amount of timethat an adatom remains on the surface after initial adsorption is givenby:

$\tau_{s} = {\frac{1}{v}{\exp( \frac{E_{des}}{kT} )}}$

In the above equation, v is a vibrational frequency of the adatom on thesurface, k is the Botzmann constant, T is temperature, and E_(des) 631is an energy involved to desorb the adatom from the surface. From thisequation it is noted that the lower the value of E_(des) 631 the easierit is for the adatom to desorb from the surface, and hence the shorterthe time the adatom will remain on the surface. A mean distance anadatom can diffuse is given by,

$X = {a_{0}{\exp( \frac{E_{des} - E_{s}}{2{kT}} )}}$

where a₀ is a lattice constant and E_(s) 621 is an activation energy forsurface diffusion. For low values of E_(des) 631 and/or high values ofE_(s) 621, the adatom will diffuse a shorter distance before desorbing,and hence is less likely to attach to growing nuclei or interact withanother adatom or cluster of adatoms.

During initial stages of film formation, adsorbed adatoms may interactto form clusters, with a critical concentration of clusters per unitarea being given by,

$\frac{N_{i}}{n_{0}} = {{❘\frac{N_{1}}{n_{0}}❘}^{i}{\exp( \frac{E_{i}}{kT} )}}$

where E_(i) is an energy involved to dissociate a critical clustercontaining i adatoms into separate adatoms, n₀ is a total density ofadsorption sites, and N₁ is a monomer density given by:

N ₁ ={dot over (R)}τ _(s)

where {dot over (R)} is a vapor impingement rate. Typically i willdepend on a crystal structure of a material being deposited and willdetermine the critical cluster size to form a stable nucleus.

A critical monomer supply rate for growing clusters is given by the rateof vapor impingement and an average area over which an adatom candiffuse before desorbing:

${\overset{.}{R}X^{2}} = {\alpha_{0}^{2}{\exp( \frac{E_{des} - E_{s}}{kT} )}}$

The critical nucleation rate is thus given by the combination of theabove equations:

${\overset{.}{N}}_{i} = {\overset{.}{R}\alpha_{0}^{2}{n_{0}( \frac{\overset{.}{R}}{{vn}_{0}} )}^{i}{\exp( \frac{{( {i + 1} )E_{des}} - E_{s} + E_{i}}{kT} )}}$

From the above equation it is noted that the critical nucleation ratewill be suppressed for surfaces that have a low desorption energy foradsorbed adatoms, a high activation energy for diffusion of an adatom,are at high temperatures, and/or are subjected to vapor impingementrates.

Sites of substrate heterogeneities, such as defects, ledges or stepedges, may increase E_(des) 631, leading to a higher density of nucleiobserved at such sites. Also, impurities or contamination on a surfacemay also increase E_(des) 631, leading to a higher density of nuclei.For vapor deposition processes, conducted under high vacuum conditions,the type and density of contaminates on a surface is affected by avacuum pressure and a composition of residual gases that make up thatpressure.

Under high vacuum conditions, a flux of molecules that impinge on asurface (per cm²-sec) is given by:

$\phi = {3.513 \times 10^{22}\frac{P}{MT}}$

where P is pressure, and M is molecular weight. Therefore, a higherpartial pressure of a reactive gas, such as H₂O, can lead to a higherdensity of contamination on a surface during vapor deposition, leadingto an increase in E_(des) 631 and hence a higher density of nuclei.

In some non-limiting examples, one measure of an amount of a material ona surface is a percentage coverage of the surface by such material. Insome non-limiting examples surface coverage may be assessed using avariety of imaging techniques, including without limitation,transmission electron microscopy (TEM), atomic force microscopy (AFM)and/or scanning electron microscopy (SEM).

In some non-limiting examples, one measure of an amount of anelectrically conductive material on a surface is a (light)transmittance, since in some non-limiting examples, electricallyconductive materials, including without limitation, metals, includingwithout limitation silver (Ag), magnesium (Mg), and/or ytterbium (Yb),attenuate and/or absorb photons.

Thus, in some non-limiting examples, a surface of a material may beconsidered to be substantially devoid of an electrically conductivematerial if the transmittance therethrough is greater than 90%, greaterthan 92%, greater than 95%, and/or greater than 98% of the transmittanceof a reference material of similar composition and dimension of suchmaterial, in some non-limiting examples, in the visible part of theelectromagnetic spectrum.

In the present disclosure, for purposes of simplicity of illustration,details of deposited materials, including without limitation, thicknessprofiles and/or edge profiles of layer(s) have been omitted. Variouspossible edge profiles at an interface between NICs 810 and conductivecoatings 830 are discussed herein.

Substrate

In some examples, the substrate 110 may comprise a base substrate 112.In some examples, the base substrate 112 may be formed of materialsuitable for use thereof, including without limitation, an inorganicmaterial, including without limitation, silicon (Si), glass, metal(including without limitation, a metal foil), sapphire, and/or otherinorganic material, and/or an organic material, including withoutlimitation, a polymer, including without limitation, a polyimide and/ora silicon-based polymer. In some examples, the base substrate 112 may berigid or flexible. In some examples, the substrate 112 may be defined byat least one planar surface. The substrate 110 has at least one surfacethat supports the remaining front plane 10 components of the device 100,including without limitation, the first electrode 120, the at least onesemiconducting layer 130 and/or the second electrode 140.

In some non-limiting examples, such surface may be an organic surfaceand/or an inorganic surface.

In some examples, the substrate 110 may comprise, in addition to thebase substrate 112, one or more additional organic and/or inorganiclayers (not shown nor specifically described herein) supported on anexposed layer surface 111 of the base substrate 112.

In some non-limiting examples, such additional layers may compriseand/or form one or more organic layers, which may comprise, replaceand/or supplement one or more of the at least one semiconducting layers130.

In some non-limiting examples, such additional layers may comprise oneor more inorganic layers, which may comprise and/or form one or moreelectrodes, which in some non-limiting examples, may comprise, replaceand/or supplement the first electrode 120 and/or the second electrode140.

In some non-limiting examples, such additional layers may compriseand/or be formed of and/or as a backplane layer 20 (FIG. 2 ) of asemiconductor material. In some non-limiting examples, the backplanelayer 20 contains power circuitry and/or switching elements for drivingthe device 100, including without limitation, electronic TFTstructure(s) and/or component(s) 200 (FIG. 2 ) thereof that may beformed by a photolithography process, which may not be provided under,and/or may precede the introduction of low pressure (including withoutlimitation, a vacuum) environment.

In the present disclosure, a semiconductor material may be described asa material that generally exhibits a band gap. In some non-limitingexamples, the band gap may be formed between a highest occupiedmolecular orbital (HOMO) and a lowest unoccupied molecular orbital(LUMO) of the semiconductor material. Semiconductor materials thusgenerally exhibit electrical conductivity that is less than that of aconductive material (including without limitation, a metal), but that isgreater than that of an insulating material (including withoutlimitation, a glass). In some non-limiting examples, the semiconductormaterial may comprise an organic semiconductor material. In somenon-limiting examples, the semiconductor material may comprise aninorganic semiconductor material.

Backplane and TFT Structure(s) Embodied Therein

FIG. 2 is a simplified cross-sectional view of an example of thesubstrate 110 of the device 100, including a backplane layer 20 thereof.In some non-limiting examples, the backplane 20 of the substrate 110 maycomprise one or more electronic and/or opto-electronic components,including without limitation, transistors, resistors and/or capacitors,such as which may support the device 100 acting as an active-matrixand/or a passive matrix device. In some non-limiting examples, suchstructures may be a thin-film transistor (TFT) structure, such as isshown at 200. In some non-limiting examples, the TFT structure 200 maybe fabricated using organic and/or inorganic materials to form variouslayers 210, 220, 230, 240, 250, 270, 270, 280 and/or parts of thebackplane layer 20 of the substrate 110 above the base substrate 112. InFIG. 2 , the TFT structure 200 shown is a top-gate TFT. In somenon-limiting examples, TFT technology and/or structures, includingwithout limitation, one or more of the layers 210, 220, 230, 240, 250,270, 270, 280, may be employed to implement non-transistor components,including without limitation, resistors and/or capacitors.

In some non-limiting examples, the backplane 20 may comprise a bufferlayer 210 deposited on an exposed layer surface 111 of the basesubstrate 112 to support the components of the TFT structure 200. Insome non-limiting examples, the TFT structure 200 may comprise asemiconductor active area 220, a gate insulating layer 230, a TFT gateelectrode 240, an interlayer insulating layer 250, a TFT sourceelectrode 260, a TFT drain electrode 270 and/or a TFT insulating layer280. In some non-limiting examples, the semiconductor active area 220 isformed over a part of the buffer layer 210, and the gate insulatinglayer 230 is deposited on substantially cover the semiconductor activearea 220. In some non-limiting examples, the gate electrode 240 isformed on top of the gate insulating layer 230 and the interlayerinsulating layer 250 is deposited thereon. The TFT source electrode 270and the TFT drain electrode 270 are formed such that they extend throughopenings formed through both the interlayer insulating layer 250 and thegate insulating layer 230 such that they are electrically coupled to thesemiconductor active area 220. The TFT insulating layer 280 is thenformed over the TFT structure 200.

In some non-limiting examples, one or more of the layers 210, 220, 230,240, 250, 270, 270, 280 of the backplane 20 may be patterned usingphotolithography, which uses a photomask to expose selective parts of aphotoresist covering an underlying device layer to UV light. Dependingupon a type of photoresist used, exposed or unexposed parts of thephotomask may then be removed to reveal desired parts of the underlyingdevice layer. In some examples, the photoresist is a positivephotoresist, in which the selective parts thereof exposed to UV lightare not substantially removable thereafter, while the remaining partsnot so exposed are substantially removable thereafter. In somenon-limiting examples, the photoresist is a negative photoresist, inwhich the selective parts thereof exposed to UV light are substantiallyremovable thereafter, while the remaining parts not so exposed are notsubstantially removable thereafter. A patterned surface may thus beetched, including without limitation, chemically and/or physically,and/or washed off and/or away, to effectively remove an exposed part ofsuch layer 210, 220, 230, 240, 250, 260, 270, 280.

Further, while a top-gate TFT structure 200 is shown in FIG. 2 , thosehaving ordinary skill in the relevant art will appreciate that other TFTstructures, including without limitation a bottom-gate TFT structure,may be formed in the backplane 20 without departing from the scope ofthe present disclosure.

In some non-limiting examples, the TFT structure 200 may be an n-typeTFT and/or a p-type TFT. In some non-limiting examples, the TFTstructure 200 may incorporate any one or more of amorphous Si (a-Si),indium gallium zinc (Zn) oxide (IGZO) and/or low-temperaturepolycrystalline Si (LTPS).

First Electrode

The first electrode 120 is deposited over the substrate 110. In somenon-limiting examples, the first electrode 120 is electrically coupledto a terminal of the power source 15 and/or to ground. In somenon-limiting examples, the first electrode 120 is so coupled through atleast one driving circuit 300 (FIG. 3 ), which in some non-limitingexamples, may incorporate at least one TFT structure 200 in thebackplane 20 of the substrate 110.

In some non-limiting examples, the first electrode 120 may comprise ananode 341 (FIG. 3 ) and/or a cathode 342 (FIG. 3 ). In some non-limitingexamples, the first electrode 120 is an anode 341.

In some non-limiting examples, the first electrode 120 may be formed bydepositing at least one thin conductive film, over (a part of) thesubstrate 110. In some non-limiting examples, there may be a pluralityof first electrodes 120, disposed in a spatial arrangement over alateral aspect of the substrate 110. In some non-limiting examples, oneor more of such at least one first electrodes 120 may be deposited over(a portion of) the TFT insulating layer 280 disposed in a lateral aspectin a spatial arrangement. If so, in some non-limiting examples, at leastone of such at least one first electrodes 120 may extend through anopening of the corresponding TFT insulating layer 280, as shown in FIG.4 , to be electrically coupled to an electrode 240, 260, 270 of the TFTstructure 200 in the backplane 20. In FIG. 4 , a part of the at leastone first electrode 120 is shown coupled to the TFT drain electrode 270.

In some non-limiting examples, the at least one first electrode 120and/or at least one thin film thereof, may comprise various materials,including without limitation, one or more metallic materials, includingwithout limitation, Mg, aluminum (Al), calcium (Ca), Zn, Ag, cadmium(Cd), barium (Ba) and/or Yb, and/or combinations of any two or morethereof, including without limitation, alloys containing any of suchmaterials, one or more metal oxides, including without limitation, atransparent conducting oxide (TCO), including without limitation,ternary compositions such as, without limitation, fluorine tin oxide(FTO), indium zinc oxide (IZO), and/or indium tin oxide (ITO), and/orcombinations of any two or more thereof and/or in varying proportions,and/or combinations of any two or more thereof in at least one layer,any one or more of which may be, without limitation, a thin film.

In some non-limiting examples, a thin conductive film comprising thefirst electrode 120 may be selectively deposited, deposited and/orprocessed using a variety of techniques, including without limitation,evaporation (including without limitation, thermal evaporation and/orelectron beam evaporation), photolithography, printing (includingwithout limitation, ink jet and/or vapor jet printing, reel-to-reelprinting and/or micro-contact transfer printing), PVD (including withoutlimitation, sputtering), CVD (including without limitation, PECVD and/orOVPD), laser annealing, LITI patterning, ALD, coating (including withoutlimitation, spin coating, dip coating, line coating and/or spraycoating), and/or combinations of any two or more thereof.

Second Electrode

The second electrode 140 is deposited over the at least onesemiconducting layer 130. In some non-limiting examples, the secondelectrode 140 is electrically coupled to a terminal of the power source15 and/or to ground. In some non-limiting examples, the second electrode140 is so coupled through at least one driving circuit 300, which insome non-limiting examples, may incorporate at least one TFT structure200 in the backplane 20 of the substrate 110.

In some non-limiting examples, the second electrode 140 may comprise ananode 341 and/or a cathode 342. In some non-limiting examples, thesecond electrode 130 is a cathode 342.

In some non-limiting examples, the second electrode 140 may be formed bydepositing a conductive coating 830, in some non-limiting examples, asat least one thin film, over (a part of) the at least one semiconductinglayer 130. In some non-limiting examples, there may be a plurality ofsecond electrodes 140, disposed in a spatial arrangement over a lateralaspect of the at least one semiconducting layer 130.

In some non-limiting examples, sheet resistance is a property of acomponent, layer, and/or part that may alter a characteristic of anelectric current passing through such component, layer, and/or part. Insome non-limiting examples, a sheet resistance R1 of the secondelectrode 140 may generally correspond to a sheet resistance of thesecond electrode 140 measured in isolation from other components,layers, and/or parts of the device 100. In some non-limiting examples,the second electrode 140 may be formed as a thin film. Accordingly, insome non-limiting examples, the sheet resistance R1 for the secondelectrode 140 may be determined and/or calculated based on thecomposition, thickness, and/or morphology of such thin film. In somenon-limiting examples, the sheet resistance R1 may be about 0.1-1,000Ω/sqr, about 1-100 Ω/sqr, about 2-50 Ω/sqr, about 3-30 Ω/sqr, about 4-20Ω/sqr, about 5-15 Ω/sqr, and/or about 10-12 Ω/sqr.

In some non-limiting examples, the second electrode 140 may be comprisedof a second electrode material.

In some non-limiting examples, a bond dissociation energy of a metal maycorrespond to a standard-state enthalpy change measured at 298 K fromthe breaking of a bond of a diatomic molecule formed by two identicalatoms of the metal. Bond dissociation energies may, by way ofnon-limiting example, be determined based on known literature, includingwithout limitation, Luo, Yu-ran, “Bond dissociation energies” (2010). Insome non-limiting examples, the second electrode material may comprise ametal having a bond dissociation energy of at least 10 kJ/mol, at least50 kJ/mol, at least 100 kJ/mol, at least 150 kJ/mol, at least 180kJ/mol, and/or at least 200 kJ/mol.

In some non-limiting examples, the second electrode material maycomprise a metal having an electronegativity that is less than about1.4, about 1.3, and/or about 1.2.

In some non-limiting examples, the second electrode material maycomprise an element selected from potassium (K), sodium (Na), lithium(Li), barium (Ba), cesium (Cs), ytterbium (Yb), silver (Ag), gold (Au),copper (Cu), aluminum (AI), magnesium (Mg), zinc (Zn), cadmium (Cd), tin(Sn), nickel (Ni), titanium (Ti), palladium (Pd), chromium (Cr), iron(Fe), cobalt (Co), zirconium (Zr), platinum (Pt), vanadium (V), niobium(Nb), iridium (Ir), osmium (Os), tantalum (Ta), molybdenum (Mo), and/ortungsten (W). In some non-limiting examples, the element may compriseCu, Ag, and/or Au. In some non-limiting examples, the element may be Cu.In some non-limiting examples, the element may be Al. In somenon-limiting examples, the element may comprise Mg, Zn, Cd, and/or Yb.In some non-limiting examples, the element may comprise Sn, Ni, Ti, Pd,Cr, Fe, and/or Co. In some non-limiting examples, the element maycomprise Zr, Pt, V, Nb, Ir, and/or Os. In some non-limiting examples,the element may comprise Ta, Mo, and/or W. In some non-limitingexamples, the element may comprise Mg, Ag, Al, Yb, and/or Li. In somenon-limiting examples, the element may comprise Mg, Ag, and/or Yb. Insome non-limiting examples, the element may comprise Mg, and/or Ag. Insome non-limiting examples, the element may be Ag.

In some non-limiting examples, the second electrode material maycomprise a pure metal. In some non-limiting examples, the secondelectrode material is a pure metal. In some non-limiting examples, thesecond electrode material is pure Ag or substantially pure Ag. In somenon-limiting examples, the second electrode material is pure Mg orsubstantially pure Mg. In some non-limiting examples, the secondelectrode material is pure Al or substantially pure Al.

In some non-limiting examples, the second electrode material maycomprise an alloy. In some non-limiting examples, the alloy may be anAg-containing alloy, and/or an AgMg-containing alloy.

In some non-limiting examples, the second electrode material maycomprise other metals in place of, and/or in combination with, Ag. Insome non-limiting examples, the second electrode material may comprisean alloy of Ag with at least one other metal. In some non-limitingexamples, the second electrode material may comprise an alloy of Ag withMg, and/or Yb. In some non-limiting examples, such alloy may be a binaryalloy having a composition from about 5 vol. % Ag to about 95 vol. % Ag,with the remainder being the other metal. In some non-limiting examples,the second electrode material comprises Ag and Mg. In some non-limitingexamples, the second electrode material comprises an Ag:Mg alloy havinga composition from about 1:10 to about 10:1 by volume. In somenon-limiting examples, the second electrode material comprises Ag andYb. In some non-limiting examples, the second electrode materialcomprises a Yb:Ag alloy having a composition from about 1:20 to about1-10:1 by volume. In some non-limiting examples, the second electrodematerial comprises Mg and Yb. In some non-limiting examples, the secondelectrode material comprises an Mg:Yb alloy. In some non-limitingexamples, the second electrode material comprises Ag, Mg, and Yb. Insome non-limiting examples, the second electrode material comprises anAg:Mg:Yb alloy.

In some non-limiting examples, the second electrode material maycomprise oxygen (O). In some non-limiting examples, the second electrodematerial may comprise at least one metal and O. In some non-limitingexamples, the second electrode material may comprise a metal oxide. Insome non-limiting examples, the metal oxide comprises Zn, indium (I),tin (Sn), antimony (Sb), and/or gallium (Ga). In some non-limitingexamples, the metal oxide may be a transparent conducting oxide (TCO).In some non-limiting examples, the TCO may comprise an indium oxide, tinoxide, antimony oxide, and/or gallium oxide. In some non-limitingexamples, the TCO may comprise indium titanium oxide (ITO), ZnO, indiumzinc oxide (IZO), and/or indium gallium zinc oxide (IGZO). In somenon-limiting examples, the TCO may be electrically doped with otherelements.

In some non-limiting example, the second electrode 140 may be formed bymetal and/or metal alloys.

In some non-limiting examples, the second electrode 140 may comprise atleast one metal or metal alloy and at least one metal oxide.

In some non-limiting examples, the second electrode 140 may comprise aplurality of layers of the second electrode material. In somenon-limiting examples, the second electrode material of a first one ofthe plurality of layers may be different from the second electrodematerial of a second one of the plurality of layers. In somenon-limiting examples, the second electrode material of the first one ofthe plurality of layers may comprise a metal and the second electrodematerial of the second one of the plurality of layers may comprise ametal oxide.

In some non-limiting examples, the second electrode material of at leastone of the plurality of layers may comprise Yb. In some non-limitingexamples, the second electrode material of one of the plurality oflayers may comprise an Ag-containing alloy and/or an AgMg-containingalloy, and/or pure Ag, substantially pure Ag, pure Mg, and/orsubstantially pure Mg. In some non-limiting examples, the secondelectrode 140 is a bilayer Yb/AgMg coating.

In some non-limiting examples, a first one of the plurality of layersthat is proximate to the NIC 810 (top-most) may comprise an elementselected from Ag, Au, Cu, Al, Sn, Ni, Ti, Pd, Cr, Fe, Co, Zr, Pt, V, Nb,Ir, Os, Ta, Mo, and/or W. In some non-limiting examples, the element maycomprise Cu, Ag, and/or Au. In some non-limiting examples, the elementmay be Cu. In some non-limiting examples, the element may be Al. In somenon-limiting examples, the element may comprise Sn, Ti, Pd, Cr, Fe,and/or Co. In some non-limiting examples, the element may comprise Ni,Zr, Pt, V, Nb, Ir, and/or Os. In some non-limiting examples, the elementmay comprise Ta, Mo, and/or W. In some non-limiting examples, theelement may comprise Mg, Ag, and/or Al. In some non-limiting examples,the element may comprise Mg, and/or Ag. In some non-limiting examples,the element may be Ag.

In some non-limiting examples, the second electrode 140 may comprise atleast one additional element. In some non-limiting examples, suchadditional element may be a non-metallic element. In some non-limitingexamples, the non-metallic material may be oxygen (O), sulfur (S),nitrogen (N), and/or carbon C. It will be appreciated by those havingordinary skill in the relevant art that, in some non-limiting examples,such additional element(s) may be incorporated into the second electrode140 as a contaminant, due to the presence of such additional element(s)in the source material, equipment used for deposition, and/or the vacuumchamber environment. In some non-limiting examples, the concentration ofsuch additional element(s) may be limited to be below a thresholdconcentration. In some non-limiting examples, such additional element(s)may form a compound together with other element(s) of the secondelectrode 140. In some non-limiting examples, a concentration of thenon-metallic element in the conductive coating material may be less thanabout 1%, about 0.1%, about 0.001%, about 0.0001%, about 0.00001%, about0.000001% and/or about 0.0000001%. In some non-limiting examples, theconductive coating 830 has a composition in which a combined amount of Oand C therein is less than about 10%, about 5%, about 1%, about 0.1%,about 0.001%, about 0.0001%, about 0.00001%, about 0.000001%, and/orabout 0.0000001% In some non-limiting examples, the second electrode 140may comprise a closed coating 4530. In some non-limiting examples, thesecond electrode 140 may comprise a discontinuous coating 1050.

In some non-limiting examples, the second electrode 140 may be disposedin a pattern that may be defined by at least one region therein that issubstantially devoid of a closed coating 4530 of the second electrode140 on the first layer surface in the first portion 115. In somenon-limiting examples, the at least one region has disposed thereon, ametal patterning NIC 810. In some non-limiting examples, the at leastone region may separate the second electrode 140 into a plurality ofdiscrete fragments thereof. In some non-limiting examples, at least twoof such plurality of discrete fragments of the second electrode 140 maybe electrically coupled. In some non-limiting examples, at least two ofsuch plurality of discrete fragments of the second electrode 140 may beeach electrically coupled to a common conductive layer or coating,including without limitation, the conductive coating 830, to allow theflow of electric current between them. In some non-limiting examples, atleast two of such plurality of discrete fragments of the secondelectrode 140 may be electrically insulated from one another.

In some non-limiting examples, a thin conductive film comprising thesecond electrode 140 may be selectively applied, deposited and/orprocessed using a variety of techniques, including without limitation,evaporation (including without limitation, thermal evaporation and/orelectron beam evaporation), photolithography, printing (includingwithout limitation, ink jet and/or vapor jet printing, reel-to-reelprinting and/or micro-contact transfer printing), PVD (including withoutlimitation, sputtering), CVD (including without limitation, PECVD and/orOVPD), laser annealing, LITI patterning, ALD, coating (including withoutlimitation, spin coating, dip coating, line coating and/or spraycoating), and/or combinations of any two or more thereof.

For purposes of simplicity of description, in the present disclosure, acombination of a plurality of elements in a single layer is denoted byseparating two such elements by a colon “:”, while a plurality of(combination(s) of) elements comprising a plurality of layers in amulti-layer coating are denoted by separating two such layers by a slash“/”. In some non-limiting examples, the layer after the slash may bedeposited on the layer preceding the slash.

In some non-limiting examples, for a Mg:Ag alloy, such alloy compositionmay range from about 1:10 to about 10:1 by volume.

In some non-limiting examples, the deposition of the second electrode140 may be performed using an open-mask and/or a mask-free depositionprocess.

Driving Circuit

In the present disclosure, the concept of a sub-pixel 2641-2643 (FIG. 26) may be referenced herein, for simplicity of description only, as asub-pixel 264 x. Likewise, in the present disclosure, the concept of apixel 340 (FIG. 3 ) may be discussed in conjunction with the concept ofat least one sub-pixel 264 x thereof. For simplicity of descriptiononly, such composite concept is referenced herein as a “(sub-) pixel340/264 x” and such term is understood to suggest either or both of apixel 340 and/or at least one sub-pixel 264 x thereof, unless thecontext dictates otherwise.

FIG. 3 is a circuit diagram for an example driving circuit such as maybe provided by one or more of the TFT structures 200 shown in thebackplane 20. In the example shown, the circuit, shown generally at 300is for an example driving circuit for an active-matrix OLED (AMOLED)device 100 (and/or a (sub-) pixel 340/264 x thereof) for supplyingcurrent to the first electrode 120 and the second electrode 140, andthat controls emission of photons from the device 100 (and/or a (sub-)pixel 340/264 x). The circuit 300 shown incorporates a plurality ofp-type top-gate thin film TFT structures 200, although the circuit 300could equally incorporate one or more p-type bottom-gate TFT structures200, one or more n-type top-gate TFT structures 200, one or more n-typebottom-gate TFT structures 200, one or more other TFT structure(s) 200,and/or any combination thereof, whether or not formed as one or aplurality of thin film layers. The circuit 300 comprises, in somenon-limiting examples, a switching TFT 310, a driving TFT 320 and astorage capacitor 330.

A (sub-) pixel 340/264 x of the OLED display 100 is represented by adiode 340. The source 311 of the switching TFT 310 is coupled to a data(or, in some non-limiting examples, a column selection) line 30. Thegate 312 of the switching TFT 310 is coupled to a gate (or, in somenon-limiting examples, a row selection) line 31. The drain 313 of theswitching TFT 310 is coupled to the gate 322 of the driving TFT 320.

The source 321 of the driving TFT 320 is coupled to a positive (ornegative) terminal of the power source 15. The (positive) terminal ofthe power source 15 is represented by a power supply line (VDD) 32.

The drain 323 of the driving TFT 320 is coupled to the anode 341 (whichmay be, in some non-limiting examples, the first electrode 120) of thediode 340 (representing a (sub-) pixel 340/264 x of the OLED display100) so that the driving TFT 320 and the diode 340 (and/or a (sub-)pixel 340/264 x of the OLED display 100) are coupled in series betweenthe power supply line (VDD) 32 and ground.

The cathode 342 (which may be, in some non-limiting examples, the secondelectrode 140) of the diode 340 (representing a (sub-) pixel 340/264 xof the OLED display 100) is represented as a resistor 350 in the circuit300.

The storage capacitor 330 is coupled at its respective ends to thesource 321 and gate 322 of the driving TFT 320. The driving TFT 320regulates a current passed through the diode 340 (representing a (sub-)pixel 340/264 x of the OLED display 100) in accordance with a voltage ofa charge stored in the storage capacitor 330, such that the diode 340outputs a desired luminance. The voltage of the storage capacitor 330 isset by the switching TFT 310, coupling it to the data line 30.

In some non-limiting examples, a compensation circuit 370 is provided tocompensate for any deviation in transistor properties from variancesduring the manufacturing process and/or degradation of the switching TFT310 and/or driving TFT 320 over time.

Semiconducting Layer

In some non-limiting examples, the at least one semiconducting layer 130may comprise a plurality of layers 131, 133, 135, 137, 139, any of whichmay be disposed, in some non-limiting examples, in a thin film, in astacked configuration, which may include, without limitation, any one ormore of a hole injection layer (HIL) 131, a hole transport layer (HTL)133, an emissive layer (EML) 135, an electron transport layer (ETL) 137and/or an electron injection layer (EIL) 139. In the present disclosure,the term “semiconducting layer(s)” may be used interchangeably with“organic layer(s)” since the layers 131, 133, 135, 137, 139 in an OLEDdevice 100 may in some non-limiting examples, may comprise organicsemiconducting materials.

In some non-limiting examples, the at least one semiconducting layer 130may form a “tandem” structure comprising a plurality of EMLs 135. Insome non-limiting examples, such tandem structure may also comprise atleast one charge generation layer (CGL).

In some non-limiting examples, a thin film comprising a layer 131, 133,135, 137, 139 in the stack making up the at least one semiconductinglayer 130, may be selectively applied, deposited and/or processed usinga variety of techniques, including without limitation, evaporation(including without limitation, thermal evaporation and/or electron beamevaporation), photolithography, printing (including without limitation,ink jet and/or vapor jet printing, reel-to-reel printing and/ormicro-contact transfer printing), PVD (including without limitation,sputtering), CVD (including without limitation, PECVD and/or OVPD),laser annealing, LITI patterning, ALD, coating (including withoutlimitation, spin coating, dip coating, line coating and/or spraycoating), and/or combinations of any two or more thereof.

Those having ordinary skill in the relevant art will readily appreciatethat the structure of the device 100 may be varied by omitting and/orcombining one or more of the semiconductor layers 131, 133, 135, 137,139.

Further, any of the layers 131, 133, 135, 137, 139 of the at least onesemiconducting layer 130 may comprise any number of sub-layers. Stillfurther, any of such layers 131, 133, 135, 137, 139 and/or sub-layer(s)thereof may comprise various mixture(s) and/or composition gradient(s).In addition, those having ordinary skill in the relevant art willappreciate that the device 100 may comprise one or more layerscontaining inorganic and/or organometallic materials and is notnecessarily limited to devices composed solely of organic materials. Byway of non-limiting example, the device 100 may comprise one or morequantum dots.

In some non-limiting examples, the HIL 131 may be formed using a holeinjection material, which may facilitate injection of holes by the anode341.

In some non-limiting examples, the HTL 133 may be formed using a holetransport material, which may, in some non-limiting examples, exhibithigh hole mobility.

In some non-limiting examples, the ETL 137 may be formed using anelectron transport material, which may, in some non-limiting examples,exhibit high electron mobility.

In some non-limiting examples, the EIL 139 may be formed using anelectron injection material, which may facilitate injection of electronsby the cathode 342.

In some non-limiting examples, the EML 135 may be formed, by way ofnon-limiting example, by doping a host material with at least oneemitter material. In some non-limiting examples, the emitter materialmay be a fluorescent emitter, a phosphorescent emitter, a thermallyactivated delayed fluorescence (TADF) emitter and/or a plurality of anycombination of these.

In some non-limiting examples, the device 100 may be an OLED in whichthe at least one semiconducting layer 130 comprises at least an EML 135interposed between conductive thin film electrodes 120, 140, whereby,when a potential difference is applied across them, holes are injectedinto the at least one semiconducting layer 130 through the anode 341 andelectrons are injected into the at least one semiconducting layer 130through the cathode 342.

The injected holes and electrons tend to migrate through the variouslayers 131, 133, 135, 137, 139 until they reach and meet each other.When a hole and an electron are in close proximity, they tend to beattracted to one another due to a Coulomb force and in some examples,may combine to form a bound state electron-hole pair referred to as anexciton. Especially if the exciton is formed in the EML 135, the excitonmay decay through a radiative recombination process, in which a photonis emitted. The type of radiative recombination process may depend upona spin state of an exciton. In some examples, the exciton may becharacterized as having a singlet or a triplet spin state. In somenon-limiting examples, radiative decay of a singlet exciton may resultin fluorescence. In some non-limiting examples, radiative decay of atriplet exciton may result in phosphorescence.

More recently, other photon emission mechanisms for OLEDs have beenproposed and investigated, including without limitation, TADF. In somenon-limiting examples, TADF emission occurs through a conversion oftriplet excitons into single excitons via a reverse inter-systemcrossing process with the aid of thermal energy, followed by radiativedecay of the singlet excitons.

In some non-limiting examples, an exciton may decay through anon-radiative process, in which no photon is released, especially if theexciton is not formed in the EML 135.

In the present disclosure, the term “internal quantum efficiency” (IQE)of an OLED device 100 refers to a proportion of all electron-hole pairsgenerated in the device 100 that decay through a radiative recombinationprocess and emit a photon.

In the present disclosure, the term “external quantum efficiency” (EQE)of an OLED device 100 refers to a proportion of charge carriersdelivered to the device 100 relative to a number of photons emitted bythe device 100. In some non-limiting examples, an EQE of 100% indicatesthat one photon is emitted for each electron that is injected into thedevice 100.

Those having ordinary skill in the relevant art will appreciate that theEQE of a device 100 may, in some non-limiting examples, be substantiallylower than the IQE of the same device 100. A difference between the EQEand the IQE of a given device 100 may in some non-limiting examples beattributable to a number of factors, including without limitation,adsorption and reflection of photons caused by various components of thedevice 100.

In some non-limiting examples, the device 100 may be anelectro-luminescent quantum dot device in which the at least onesemiconducting layer 130 comprises an active layer comprising at leastone quantum dot. When current is provided by the power source 15 to thefirst electrode 120 and second electrode 140, photons are emitted fromthe active layer comprising the at least one semiconducting layer 130between them.

Those having ordinary skill in the relevant art will readily appreciatethat the structure of the device 100 may be varied by the introductionof one or more additional layers (not shown) at appropriate position(s)within the at least one semiconducting layer 130 stack, includingwithout limitation, a hole blocking layer (not shown), an electronblocking layer (not shown), an additional charge transport layer (notshown) and/or an additional charge injection layer (not shown).

Barrier Coating

In some non-limiting examples, a barrier coating 1650 may be provided tosurround and/or encapsulate the first electrode 120, second electrode140, and the various layers of the at least one semiconducting layer 130and/or the substrate 110 disposed thereon of the device 100.

In some non-limiting examples, the barrier coating 1650 may be providedto inhibit the various layers 120, 130, 140 of the device 100, includingthe at least one semiconducting layer 130 and/or the cathode 342 frombeing exposed to moisture and/or ambient air, since these layers 120,130, 140 may be prone to oxidation.

In some non-limiting examples, application of the barrier coating 1650to a highly non-uniform surface may increase a likelihood of pooradhesion of the barrier coating 1650 to such surface.

In some non-limiting examples, the absence of a barrier coating 1650and/or a poorly-applied barrier coating 1650 may cause and/or contributeto defects in and/or partial and/or total failure of the device 100. Insome non-limiting examples, a poorly-applied barrier coating 1650 mayreduce adhesion of the barrier coating 1650 to the device 100. In somenon-limiting examples, poor adhesion of the barrier coating 1650 mayincrease a likelihood of the barrier coating 1650 peeling off the device100 in whole or in part, especially if the device 100 is bent and/orflexed. In some non-limiting examples, a poorly-applied barrier coating1650 may allow air pockets to be trapped, during application of thebarrier coating 1650, between the barrier coating 1650 and an underlyingsurface of the device 100 to which the barrier coating 1650 was applied.

In some non-limiting examples, the barrier coating 1650 may be a thinfilm encapsulation (TFE) layer 2050 (FIG. 20B) and may be selectivelyapplied, deposited and/or processed using a variety of techniques,including without limitation, evaporation (including without limitation,thermal evaporation and/or electron beam evaporation), photolithography,printing (including without limitation, ink jet and/or vapor jetprinting, reel-to-reel printing and/or micro-contact transfer printing),PVD (including without limitation, sputtering), CVD (including withoutlimitation, PECVD and/or OVPD), laser annealing, LITI patterning, ALD,coating (including without limitation, spin coating, dip coating, linecoating and/or spray coating), and/or combinations of any two or morethereof.

In some non-limiting examples, the barrier coating 1650 may be providedby laminating a pre-formed barrier film onto the device 100. In somenon-limiting examples, the barrier coating 1650 may comprise amulti-layer coating comprising at least one of an organic material, aninorganic material and/or any combination thereof. In some non-limitingexamples, the barrier coating 1550 may further comprise a gettermaterial and/or a dessicant.

Lateral Aspect

In some non-limiting examples, including where the OLED device 100comprises a lighting panel, an entire lateral aspect of the device 100may correspond to a single lighting element. As such, the substantiallyplanar cross-sectional profile shown in FIG. 1 may extend substantiallyalong the entire lateral aspect of the device 100, such that photons areemitted from the device 100 substantially along the entirety of thelateral extent thereof. In some non-limiting examples, such singlelighting element may be driven by a single driving circuit 300 of thedevice 100.

In some non-limiting examples, including where the OLED device 100comprises a display module, the lateral aspect of the device 100 may besub-divided into a plurality of emissive regions 1910 of the device 100,in which the cross-sectional aspect of the device structure 100, withineach of the emissive region(s) 1910 shown, without limitation, in FIG. 1causes photons to be emitted therefrom when energized.

Emissive Regions

In some non-limiting examples, individual emissive regions 1910 of thedevice 100 may be laid out in a lateral pattern. In some non-limitingexamples, the pattern may extend along a first lateral direction. Insome non-limiting examples, the pattern may also extend along a secondlateral direction, which in some non-limiting examples, may besubstantially normal to the first lateral direction. In somenon-limiting examples, the pattern may have a number of elements in suchpattern, each element being characterized by one or more featuresthereof, including without limitation, a wavelength of light emitted bythe emissive region 1910 thereof, a shape of such emissive region 1910,a dimension (along either or both of the first and/or second lateraldirection(s)), an orientation (relative to either and/or both of thefirst and/or second lateral direction(s)) and/or a spacing (relative toeither or both of the first and/or second lateral direction(s)) from aprevious element in the pattern. In some non-limiting examples, thepattern may repeat in either or both of the first and/or second lateraldirection(s).

In some non-limiting examples, each individual emissive region 1910 ofthe device 100 is associated with, and driven by, a correspondingdriving circuit 300 within the backplane 20 of the device 100, in whichthe diode 340 corresponds to the OLED structure for the associatedemissive region 1910. In some non-limiting examples, including withoutlimitation, where the emissive regions 1910 are laid out in a regularpattern extending in both the first (row) lateral direction and thesecond (column) lateral direction, there may be a signal line 30, 31 inthe backplane 20, which may be the gate line (or row selection) line 31,corresponding to each row of emissive regions 1910 extending in thefirst lateral direction and a signal line 30, 31, which may in somenon-limiting examples be the data (or column selection) line 30,corresponding to each column of emissive regions 1910 extending in thesecond lateral direction. In such a non-limiting configuration, a signalon the row selection line 31 may energize the respective gates 312 ofthe switching TFT(s) 310 electrically coupled thereto and a signal onthe data line 30 may energize the respective sources of the switchingTFT(s) 310 electrically coupled thereto, such that a signal on a rowselection line 31/data line 30 pair will electrically couple andenergise, by the positive terminal (represented by the power supply lineVDD 32) of the power source 15, the anode 341 of the OLED structure ofthe emissive region 1910 associated with such pair, causing the emissionof a photon therefrom, the cathode 342 thereof being electricallycoupled to the negative terminal of the power source 15.

In some non-limiting examples, each emissive region 1910 of the device100 corresponds to a single display pixel 340. In some non-limitingexamples, each pixel 340 emits light at a given wavelength spectrum. Insome non-limiting examples, the wavelength spectrum corresponds to acolour in, without limitation, the visible light spectrum.

In some non-limiting examples, each emissive region 1910 of the device100 corresponds to a sub-pixel 264 x of a display pixel 340. In somenon-limiting examples, a plurality of sub-pixels 264 x may combine toform, or to represent, a single display pixel 340.

In some non-limiting examples, a single display pixel 340 may berepresented by three sub-pixels 2641-2643. In some non-limitingexamples, the three sub-pixels 2641-2643 may be denoted as,respectively, R(ed) sub-pixels 2641, G(reen) sub-pixels 2642 and/orB(lue) sub-pixels 2643. In some non-limiting examples, a single displaypixel 340 may be represented by four sub-pixels 264 x, in which three ofsuch sub-pixels 264 x may be denoted as R, G and B sub-pixels 2641-2643and the fourth sub-pixel 264 x may be denoted as a W(hite) sub-pixel 264x. In some non-limiting examples, the emission spectrum of the lightemitted by a given sub-pixel 264 x corresponds to the colour by whichthe sub-pixel 264 x is denoted. In some non-limiting examples, thewavelength of the light does not correspond to such colour but furtherprocessing is performed, in a manner apparent to those having ordinaryskill in the relevant art, to transform the wavelength to one that doesso correspond.

Since the wavelength of sub-pixels 264 x of different colours may bedifferent, the optical characteristics of such sub-pixels 264 x maydiffer, especially if a common electrode 120, 140 having a substantiallyuniform thickness profile is employed for sub-pixels 264 x of differentcolours.

When a common electrode 120, 140 having a substantially uniformthickness is provided as the second electrode 140 in a device 100, theoptical performance of the device 100 may not be readily be fine-tunedaccording to an emission spectrum associated with each (sub-)pixel340/264 x. The second electrode 140 used in such OLED devices 100 may insome non-limiting examples, be a common electrode 120, 140 coating aplurality of (sub-)pixels 340/264 x. By way of non-limiting example,such common electrode 120, 140 may be a relatively thin conductive filmhaving a substantially uniform thickness across the device 100. Whileefforts have been made in some non-limiting examples, to tune theoptical microcavity effects associated with each (sub-)pixel 340/264 xcolor by varying a thickness of organic layers disposed within different(sub-)pixel(s) 340/264 x, such approach may, in some non-limitingexamples, provide a significant degree of tuning of the opticalmicrocavity effects in at least some cases. In addition, in somenon-limiting examples, such approach may be difficult to implement in anOLED display production environment.

As a result, the presence of optical interfaces created by numerousthin-film layers and coatings with different refractive indices, such asmay in some non-limiting examples be used to construct opto-electronicdevices including without limitation OLED devices 100, may createdifferent optical microcavity effects for sub-pixels 264 x of differentcolours.

Some factors that may impact an observed microcavity effect in a device100 includes, without limitation, the total path length (which in somenon-limiting examples may correspond to the total thickness of thedevice 100 through which photons emitted therefrom will travel beforebeing out-coupled) and the refractive indices of various layers andcoatings.

In some non-limiting examples, modulating the thickness of an electrode120, 140 in and across a lateral aspect 410 of emissive region(s) 1910of a (sub-) pixel 340/264 x may impact the microcavity effectobservable. In some non-limiting examples, such impact may beattributable to a change in the total optical path length.

In some non-limiting examples, this may be particularly the case wherethe electrode 120, 140 is formed of at least one conductive coating 830.In some non-limiting examples, the total optical path length, andconcomitantly, the optical microcavity effect observable, may also bemodulated by a change in a thickness of any layer, including withoutlimitation, the NIC 810, NPC 1120, and/or a capping layer (CPL) 3610(FIG. 36A), disposed in a given emissive region 1910.

In some non-limiting examples, the optical properties of the device 100,and/or in some non-limiting examples, across the lateral aspect 410 ofemissive region(s) 1910 of a (sub-) pixel 340/264 x that may be variedby modulating at least one optical microcavity effect, include, withoutlimitation, the emission spectrum, the intensity (including withoutlimitation, luminous intensity) and/or angular distribution of emittedlight, including without limitation, an angular dependence of abrightness and/or color shift of the emitted light.

In some non-limiting examples, a sub-pixel 264 x is associated with afirst set of other sub-pixels 264 x to represent a first display pixel340 and also with a second set of other sub-pixels 264 x to represent asecond display pixel 340, so that the first and second display pixels340 may have associated therewith, the same sub-pixel(s) 264 x.

The pattern and/or organization of sub-pixels 264 x into display pixels340 continues to develop. All present and future patterns and/ororganizations are considered to fall within the scope of the presentdisclosure.

Non-Emissive Regions

In some non-limiting examples, the various emissive regions 1910 of thedevice 100 are substantially surrounded and separated by, in at leastone lateral direction, one or more non-emissive regions 1920, in whichthe structure and/or configuration along the cross-sectional aspect, ofthe device structure 100 shown, without limitation, in FIG. 1 , isvaried, so as to substantially inhibit photons to be emitted therefrom.In some non-limiting examples, the non-emissive regions 1920 comprisethose regions in the lateral aspect, that are substantially devoid of anemissive region 1910.

Thus, as shown in the cross-sectional view of FIG. 4 , the lateraltopology of the various layers of the at least one semiconducting layer130 may be varied to define at least one emissive region 1910,surrounded (at least in one lateral direction) by at least onenon-emissive region 1920.

In some non-limiting examples, the emissive region 1910 corresponding toa single display (sub-) pixel 340/264 x may be understood to have alateral aspect 410, surrounded in at least one lateral direction by atleast one non-emissive region 1920 having a lateral aspect 420.

A non-limiting example of an implementation of the cross-sectionalaspect of the device 100 as applied to an emissive region 1910corresponding to a single display (sub-) pixel 340/264 x of an OLEDdisplay 100 will now be described. While features of such implementationare shown to be specific to the emissive region 1910, those havingordinary skill in the relevant art will appreciate that in somenon-limiting examples, more than one emissive region 1910 may encompasscommon features.

In some non-limiting examples, the first electrode 120 may be disposedover an exposed layer surface 111 of the device 100, in somenon-limiting examples, within at least a part of the lateral aspect 410of the emissive region 1910. In some non-limiting examples, at leastwithin the lateral aspect 410 of the emissive region 1910 of the (sub-)pixel(s) 340/264 x, the exposed layer surface 111, may, at the time ofdeposition of the first electrode 120, comprise the TFT insulating layer280 of the various TFT structures 200 that make up the driving circuit300 for the emissive region 1910 corresponding to a single display(sub-) pixel 340/264 x.

In some non-limiting examples, the TFT insulating layer 280 may beformed with an opening 430 extending therethrough to permit the firstelectrode 120 to be electrically coupled to one of the TFT electrodes240, 260, 270, including, without limitation, as shown in FIG. 4 , theTFT drain electrode 270.

Those having ordinary skill in the relevant art will appreciate that thedriving circuit 300 comprises a plurality of TFT structures 200,including without limitation, the switching TFT 310, the driving TFT 320and/or the storage capacitor 330. In FIG. 4 , for purposes of simplicityof illustration, only one TFT structure 200 is shown, but it will beappreciated by those having ordinary skill in the relevant art, thatsuch TFT structure 200 is representative of such plurality thereof thatcomprise the driving circuit 300.

In a cross-sectional aspect, the configuration of each emissive region1910 may, in some non-limiting examples, be defined by the introductionof at least one pixel definition layer (PDL) 440 substantiallythroughout the lateral aspects 420 of the surrounding non-emissiveregion(s) 1920. In some non-limiting examples, the PDLs 440 may comprisean insulating organic and/or inorganic material.

In some non-limiting examples, the PDLs 440 are deposited substantiallyover the TFT insulating layer 280, although, as shown, in somenon-limiting examples, the PDLs 440 may also extend over at least a partof the deposited first electrode 120 and/or its outer edges.

In some non-limiting examples, as shown in FIG. 4 , the cross-sectionalthickness and/or profile of the PDLs 440 may impart a substantiallyvalley-shaped configuration to the emissive region 1910 of each (sub-)pixel 340/264 x by a region of increased thickness along a boundary ofthe lateral aspect 420 of the surrounding non-emissive region 1920 withthe lateral aspect 410 of the surrounded emissive region 1910,corresponding to a (sub-) pixel 340/264 x.

In some non-limiting examples, the profile of the PDLs 440 may have areduced thickness beyond such valley-shaped configuration, includingwithout limitation, away from the boundary between the lateral aspect420 of the surrounding non-emissive region 1920 and the lateral aspect410 of the surrounded emissive region 1910, in some non-limitingexamples, substantially well within the lateral aspect 420 of suchnon-emissive region 1920.

While the PDL(s) 440 have been generally illustrated as having alinearly-sloped surface to form a valley-shaped configuration thatdefine the emissive region(s) 1910 surrounded thereby, those havingordinary skill in the relevant art will appreciate that in somenon-limiting examples, at least one of the shape, aspect ratio,thickness, width and/or configuration of such PDL(s) 440 may be varied.By way of non-limiting example, a PDL 440 may be formed with a steeperor more gradually-sloped part. In some non-limiting examples, suchPDL(s) 440 may be configured to extend substantially normally away froma surface on which it is deposited, that covers one or more edges of thefirst electrode 120. In some non-limiting examples, such PDL(s) 440 maybe configured to have deposited thereon at least one semiconductinglayer 130 by a solution-processing technology, including withoutlimitation, by printing, including without limitation, ink-jet printing.

In some non-limiting examples, the at least one semiconducting layer 130may be deposited over the exposed layer surface 111 of the device 100,including at least a part of the lateral aspect 410 of such emissiveregion 1910 of the (sub-) pixel(s) 340/264 x. In some non-limitingexamples, at least within the lateral aspect 410 of the emissive region1910 of the (sub-) pixel(s) 340/264 x, such exposed layer surface 111,may, at the time of deposition of the at least one semiconducting layer130 (and/or layers 131, 133, 135, 137, 139 thereof), comprise the firstelectrode 120.

In some non-limiting examples, the at least one semiconducting layer 130may also extend beyond the lateral aspect 410 of the emissive region1910 of the (sub-) pixel(s) 340/264 x and at least partially within thelateral aspects 420 of the surrounding non-emissive region(s) 1920. Insome non-limiting examples, such exposed layer surface 111 of suchsurrounding non-emissive region(s) 1920 may, at the time of depositionof the at least one semiconducting layer 130, comprise the PDL(s) 440.

In some non-limiting examples, the second electrode 140 may be disposedover an exposed layer surface 111 of the device 100, including at leasta part of the lateral aspect 410 of the emissive region 1910 of the(sub-) pixel(s) 340/264 x. In some non-limiting examples, at leastwithin the lateral aspect 410 of the emissive region 1910 of the (sub-)pixel(s) 340/264 x, such exposed layer surface 111, may, at the time ofdeposition of the second electrode 130, comprise the at least onesemiconducting layer 130.

In some non-limiting examples, the second electrode 140 may also extendbeyond the lateral aspect 410 of the emissive region 1910 of the (sub-)pixel(s) 340/264 x and at least partially within the lateral aspects 420of the surrounding non-emissive region(s) 1920. In some non-limitingexamples, such exposed layer surface 111 of such surroundingnon-emissive region(s) 1920 may, at the time of deposition of the secondelectrode 140, comprise the PDL(s) 440.

In some non-limiting examples, the second electrode 140 may extendthroughout substantially all or a substantial part of the lateralaspects 420 of the surrounding non-emissive region(s) 1920.

Transmissivity

Because the OLED device 100 emits photons through either or both of thefirst electrode 120 (in the case of a bottom-emission and/or adouble-sided emission device), as well as the substrate 110 and/or thesecond electrode 140 (in the case of a top-emission and/or double-sidedemission device), it may be desirable to make either or both of thefirst electrode 120 and/or the second electrode 140 substantiallyphoton- (or light)-transmissive (“transmissive”), in some non-limitingexamples, at least across a substantial part of the lateral aspect 410of the emissive region(s) 1910 of the device 100. In the presentdisclosure, such a transmissive element, including without limitation,an electrode 120, 140, a material from which such element is formed,and/or property thereof, may comprise an element, material and/orproperty thereof that is substantially transmissive (“transparent”),and/or, in some non-limiting examples, partially transmissive(“semi-transparent”), in some non-limiting examples, in at least onewavelength range.

A variety of mechanisms have been adopted to impart transmissiveproperties to the device 100, at least across a substantial part of thelateral aspect 410 of the emissive region(s) 1910 thereof.

In some non-limiting examples, including without limitation, where thedevice 100 is a bottom-emission device and/or a double-sided emissiondevice, the TFT structure(s) 200 of the driving circuit 300 associatedwith an emissive region 1910 of a (sub-) pixel 340/264 x, which may atleast partially reduce the transmissivity of the surrounding substrate110, may be located within the lateral aspect 420 of the surroundingnon-emissive region(s) 1920 to avoid impacting the transmissiveproperties of the substrate 110 within the lateral aspect 410 of theemissive region 1910.

In some non-limiting examples, where the device 100 is a double-sidedemission device, in respect of the lateral aspect 410 of an emissiveregion 1910 of a (sub-) pixel 340/264 x, a first one of the electrode120, 140 may be made substantially transmissive, including withoutlimitation, by at least one of the mechanisms disclosed herein, inrespect of the lateral aspect 410 of neighbouring and/or adjacent (sub-)pixel(s) 340/264 x, a second one of the electrodes 120, 140 may be madesubstantially transmissive, including without limitation, by at leastone of the mechanisms disclosed herein. Thus, the lateral aspect 410 ofa first emissive region 1910 of a (sub-) pixel 340/264 x may be madesubstantially top-emitting while the lateral aspect 410 of a secondemissive region 1910 of a neighbouring (sub-) pixel 340/264 x may bemade substantially bottom-emitting, such that a subset of the (sub-)pixel(s) 340/264 x are substantially top-emitting and a subset of the(sub-) pixel(s) 340/264 x are substantially bottom-emitting, in analternating (sub-) pixel 340/264 x sequence, while only a singleelectrode 120, 140 of each (sub-) pixel 340/264 x is made substantiallytransmissive.

In some non-limiting examples, a mechanism to make an electrode 120,140, in the case of a bottom-emission device and/or a double-sidedemission device, the first electrode 120, and/or in the case of atop-emission device and/or a double-sided emission device, the secondelectrode 140, transmissive is to form such electrode 120, 140 of atransmissive thin film.

In some non-limiting examples, a sheet resistance R2 of the conductivecoating 830 may generally correspond to a sheet resistance of theconductive coating 380 measured in isolation from other components,layers, and/or parts of the device 100. In some non-limiting examples,the conductive coating 830 may be formed as a thin film. Accordingly, insome non-limiting examples, the sheet resistance R3 for the conductivecoating 830 may be determined and/or calculated based on thecomposition, thickness, and/or morphology of such thin film. In somenon-limiting examples, the sheet resistance R3 may be less than about 10Ω/sqr, be less than about 5 Ω/sqr, be less than about 1 Ω/sqr, be lessthan about 0.5 Ω/sqr, 0.2 Ω/sqr, and/or be less than about 0.1 Ω/sqr.

In some non-limiting examples, the conductive coating 830 may comprise aconductive coating material 831.

In some non-limiting examples, the conductive coating material 831 maycomprise a metal having a bond dissociation energy of the conductivecoating material 831 of less than 300 kJ/mol, less than 200 kJ/mol, lessthan 165 kJ/mol, less than 150 kJ/mol, less than 100 kJ/mol, less than50 kJ/mol, and/or less than 20 kJ/mol.

In some non-limiting examples, the conductive coating material 831 maycomprise an element selected from K, Na, Li, Ba, Cs, Yb, Ag, Au, Cu, Al,Mg, Zn, Cd, Sn, and/or yttrium (Y). In some non-limiting examples, theelement may comprise K, Na, Li, Ba, Cs, Tb, Ag, Au, Cu, Al, and/or Mg.In some non-limiting examples, the element may comprise Cu, Ag, and/orAu. In some non-limiting examples, the element may be Cu. In somenon-limiting examples, the element may be Al. In some non-limitingexamples, the element may comprise Mg, Zn, Cd, and/or Yb. In somenon-limiting examples, the element may comprise Mg, Ag, Al, Yb, and/orLi. In some non-limiting examples, the element may comprise Mg, Ag,and/or Yb. In some non-limiting examples, the element may comprise Mg,and/or Ag. In some non-limiting examples, the element may be Ag.

In some non-limiting examples, the conductive coating material 831 maycomprise a pure metal. In some non-limiting examples, the conductivecoating 830 is a pure metal. In some non-limiting examples, theconductive coating 830 is pure Ag or substantially pure Ag. In somenon-limiting examples, the substantially pure Ag may have a purity of atleast about 95%, at least about 99%, at least about 99.9%, at leastabout 99.99%, at least about 99.999%, and/or at least about 99.9995%. Insome non-limiting examples, the conductive coating 830 is pure Mg orsubstantially pure Mg. In some non-limiting examples, the substantiallypure Mg may have a purity of at least about 95%, at least about 99%, atleast about 99.9%, at least about 99.99%, at least about 99.999%, and/orat least about 99.9995%.

In some non-limiting examples, the conductive coating 830 may comprisean alloy. In some non-limiting examples, the alloy may be anAg-containing alloy, an Mg-containing alloy, and/or an AgMg-containingalloy. In some non-limiting examples, the AgMg-containing alloy may havean alloy composition that may range from 1:10 (Ag:Mg) to about 10:1 byvolume.

In some non-limiting examples, the conductive coating material 831 maycomprise other metals in place of, and/or in combination with, Ag. Insome non-limiting examples, the conductive coating material 831 maycomprise an alloy of Ag with at least one other metal. In somenon-limiting examples, the conductive coating material 831 may comprisean alloy of Ag with Mg, and/or Yb. In some non-limiting examples, suchalloy may be a binary alloy having a composition from about 5 vol. % Agto about 95 vol. % Ag, with the remainder being the other metal. In somenon-limiting examples, the conductive coating material 831 comprises Agand Mg. In some non-limiting examples, the conductive coating material831 comprises an Ag:Mg alloy having a composition from about 1:10 toabout 10:1 by volume. In some non-limiting examples, the conductivecoating material 831 comprises Ag and Yb. In some non-limiting examples,the conductive coating material 831 comprises a Yb:Ag alloy having acomposition from about 1:20 to about 1-10:1 by volume. In somenon-limiting examples, the conductive coating material 831 comprises Mgand Yb. In some non-limiting examples, the conductive coating material831 comprises an Mg:Yb alloy. In some non-limiting examples, theconductive coating material 831 comprises Ag, Mg, and Yb. In somenon-limiting examples, the conductive coating material 831 comprises anAg:Mg:Yb alloy.

In some non-limiting examples, the conductive coating 830 may compriseat least one additional element. In some non-limiting examples, suchadditional element may be a non-metallic element. In some non-limitingexamples, the non-metallic material may be oxygen (O), sulfur (S),nitrogen (N), and/or carbon (C). It will be appreciated by those havingordinary skill in the relevant art that, in some non-limiting examples,such additional element(s) may be incorporated into the conductivecoating 830 as a contaminant, due to the presence of such additionalelement(s) in the source material, equipment used for deposition, and/orthe vacuum chamber environment. In some non-limiting examples, theconcentration of such additional element(s) may be limited to be below athreshold concentration. In some non-limiting examples, such additionalelement(s) may form a compound together with other element(s) of theconductive coating 830. In some non-limiting examples, a concentrationof the non-metallic element in the conductive coating material 831 maybe less than about 1%, about 0.1%, about 0.001%, about 0.0001%, about0.00001%, about 0.000001% and/or about 0.0000001%. In some non-limitingexamples, the conductive coating 830 has a composition in which acombined amount of O and C therein is less than about 10%, about 5%,about 1%, about 0.1%, about 0.001%, about 0.0001%, about 0.00001%, about0.000001%, and/or about 0.0000001%

It has now been, somewhat surprisingly, found that reducing aconcentration of certain non-metallic element in the conductive coating830 may facilitate selected deposition of the conductive coating 830.Without wishing to be bound by any particular theory, it may bepostulated that certain non-metallic elements, such as, by way ofnon-limiting examples, O and/or C, when present in the vapour flux ofthe conductive coating 830 and/or in the deposition chamber and/orenvironment, may be deposited onto the surface of the NIC 810 to act asnucleation sites for the metallic element(s) of the conductive coating830. It may be postulated that reducing a concentration of suchnon-metallic elements that could act as nucleation sites may facilitatereducing an amount of conductive coating material 831 deposited on theexposed layer surface 111 of the NIC 810.

In some non-limiting examples, the conductive coating 830 and themetallic coating 138 may comprise a common metal. In some non-limitingexamples, the conductive coating material 831 and the metallic coatingmaterial have the same composition.

In some non-limiting examples, the conductive coating 830 may comprise aplurality of layers of the conductive coating material 831. In somenon-limiting examples, the conductive coating material 831 of a firstone of the plurality of layers may be different from the conductivecoating material 831 of a second one of the plurality of layers. In somenon-limiting examples, the conductive coating 830 may comprise amultilayer coating. In some non-limiting examples, such multilayercoating may comprise Yb/Ag, Yb/Mg, Yb/Mg:Ag, Yb/Yb:Ag, Yb/Ag/Mg, and/orYb/Mg/Ag.

In some non-limiting examples, especially in the case of such thinconductive films, a relatively thin layer thickness may be up tosubstantially a few tens of nm so as to contribute to enhancedtransmissive qualities but also favorable optical properties (includingwithout limitation, reduced microcavity effects) for use in an OLEDdevice 100.

In some non-limiting examples, such thin conductive films may comprisean intermediate stage thin film.

In some non-limiting examples, a reduction in the thickness of anelectrode 120, 140 to promote transmissive qualities may be accompaniedby an increase in the sheet resistance of the electrode 120, 140.

In some non-limiting examples, a device 100 having at least oneelectrode 120, 140 with a high sheet resistance creates a largecurrent-resistance (IR) drop when coupled to the power source 15, inoperation. In some non-limiting examples, such an IR drop may becompensated for, to some extent, by increasing a level (VDD) of thepower source 15. However, in some non-limiting examples, increasing thelevel of the power source 15 to compensate for the IR drop due to highsheet resistance, for at least one (sub-) pixel 340/264 x may call forincreasing the level of a voltage to be supplied to other components tomaintain effective operation of the device 100.

In some non-limiting examples, to reduce power supply demands for adevice 100 without significantly impacting an ability to make anelectrode 120, 140 substantially transmissive (by employing at least onethin film layer of any combination of TCOs, thin metal films and/or thinmetallic alloy films), an auxiliary electrode 1750 and/or busbarstructure 4150 may be formed on the device 100 to allow current to becarried more effectively to various emissive region(s) of the device100, while at the same time, reducing the sheet resistance and itsassociated IR drop of the transmissive electrode 120, 140.

In some non-limiting examples, a sheet resistance specification, for acommon electrode 120, 140 of an AMOLED display device 100, may varyaccording to a number of parameters, including without limitation, a(panel) size of the device 100 and/or a tolerance for voltage variationacross the device 100. In some non-limiting examples, the sheetresistance specification may increase (that is, a lower sheet resistanceis specified) as the panel size increases. In some non-limitingexamples, the sheet resistance specification may increase as thetolerance for voltage variation decreases.

In some non-limiting examples, a sheet resistance specification may beused to derive an example thickness of an auxiliary electrode 1750and/or a busbar 4150 to comply with such specification for various panelsizes. In one non-limiting example, an aperture ratio of 0.64 wasassumed for all display panel sizes and a thickness of the auxiliaryelectrode 1750 for various example panel sizes were calculated forexample voltage tolerances of 0.1 V and 0.2 V in Table 1 below.

TABLE 1 Example Auxiliary Electrode Thickness for Various Panel Size andVoltage Tolerances Panel Size (in.) 9.7 12.9 15.4 27 65 SpecifiedThickness (nm) @0.1 V 132 239 335 1200 6500 @0.2 V 67 117 174 516 2800

By way of non-limiting example, for a top-emission device, the secondelectrode 140 may be made transmissive. On the other hand, in somenon-limiting examples, such auxiliary electrode 1750 and/or busbar 4150may not be substantially transmissive but may be electrically coupled tothe second electrode 140, including without limitation, by deposition ofa conductive coating 830 therebetween, to reduce an effective sheetresistance of the second electrode 140.

In some non-limiting examples, such auxiliary electrode 1750 may bepositioned and/or shaped in either or both of a lateral aspect and/orcross-sectional aspect so as not to interfere with the emission ofphotons from the lateral aspect 410 of the emissive region 1910 of a(sub-) pixel 340/264 x.

In some non-limiting examples, a mechanism to make the first electrode120, and/or the second electrode 140, is to form such electrode 120, 140in a pattern across at least a part of the lateral aspect 410 of theemissive region(s) 1910 thereof and/or in some non-limiting examples,across at least a part of the lateral aspect 420 of the non-emissiveregion(s) 1920 surrounding them. In some non-limiting examples, suchmechanism may be employed to form the auxiliary electrode 1750 and/orbusbar 4150 in a position and/or shape in either or both of a lateralaspect and/or cross-sectional aspect so as not to interfere with theemission of photons from the lateral aspect 410 of the emissive region1910 of a (sub-) pixel 340/264 x, as discussed above.

In some non-limiting examples, the device 100 may be configured suchthat it is substantially devoid of a conductive oxide material in anoptical path of photons emitted by the device 100. By way ofnon-limiting example, in the lateral aspect 410 of at least one emissiveregion 1910 corresponding to a (sub-) pixel 340/264 x, at least one ofthe layers and/or coatings deposited after the at least onesemiconducting layer 130, including without limitation, the secondelectrode 140, the NIC 810 and/or any other layers and/or coatingsdeposited thereon, may be substantially devoid of any conductive oxidematerial. In some non-limiting examples, being substantially devoid ofany conductive oxide material may reduce absorption and/or reflection oflight emitted by the device 100. By way of non-limiting example,conductive oxide materials, including without limitation, ITO and/orIZO, may absorb light in at least the B(lue) region of the visiblespectrum, which may, in generally, reduce efficiency and/or performanceof the device 100.

In some non-limiting examples, a combination of these and/or othermechanisms may be employed.

Additionally, in some non-limiting examples, in addition to renderingone or more of the first electrode 120, the second electrode 140, theauxiliary electrode 1750 and/or the busbar 4150, substantiallytransmissive across at least across a substantial part of the lateralaspect 410 of the emissive region 1910 corresponding to the (sub-)pixel(s) 340/264 x of the device 100, in order to allow photons to beemitted substantially across the lateral aspect 410 thereof, it may bedesired to make at least one of the lateral aspect(s) 420 of thesurrounding non-emissive region(s) 1920 of the device 100 substantiallytransmissive in both the bottom and top directions, so as to render thedevice 100 substantially transmissive relative to light incident on anexternal surface thereof, such that a substantial part suchexternally-incident light may be transmitted through the device 100, inaddition to the emission (in a top-emission, bottom-emission and/ordouble-sided emission) of photons generated internally within the device100 as disclosed herein.

Conductive Coating

In the present disclosure, the terms “conductive coating” and “electrodecoating” may be used interchangeably to refer to similar concepts andreferences to a conductive coating 830 herein, in the context of beingpatterned by selective deposition of an NIC 810 and/or an NPC 1120 may,in some non-limiting examples, be applicable to an electrode coating 830in the context of being patterned by selective deposition of apatterning coating 810, 1120. In some non-limiting examples, referenceto an electrode coating 830 may signify a coating having a specificcomposition as described herein. Similarly, in the present disclosure,the terms “conductive coating material” and “electrode coating material”may be used interchangeably to refer to similar concepts and referencesto a conductive coating material 831 herein.

In some non-limiting examples, the conductive coating material 831 (FIG.9 ) used to deposit a conductive coating 830 onto an exposed layersurface 111 of underlying material may be a substantially pure element.In some further non-limiting examples, the conductive coating 830includes a substantially pure element. In some other non-limitingexamples, the conductive coating 830 includes two or more elements,which may for example be provided as an alloy or a mixture.

In some non-limiting examples, at least one component of such mixture isnot deposited on such surface, may not be deposited on such exposedlayer surface 111 during deposition and/or may be deposited in a smallamount relative to an amount of remaining component(s) of such mixturethat are deposited on such exposed layer surface 111.

In some non-limiting examples, such at least one component of suchmixture may have a property relative to the remaining component(s) toselectively deposit substantially only the remaining component(s). Insome non-limiting examples, the property may be a vapor pressure.

In some non-limiting examples, such at least one component of suchmixture may have a lower vapor pressure relative to the remainingcomponents.

In some non-limiting examples, the conductive coating material 831 maybe a copper (Cu)-magnesium (Cu—Mg) mixture, in which Cu has a lowervapor pressure than Mg.

In some non-limiting examples, the conductive coating material 831 usedto deposit a conductive coating 830 onto an exposed layer surface 111may be substantially pure.

In some non-limiting examples, the conductive coating material 831 usedto deposit Mg is and in some non-limiting examples, comprisessubstantially pure Mg. In some non-limiting examples, substantially pureMg may exhibit substantially similar properties relative to pure Mg. Insome non-limiting examples, purity of Mg may be about 95% or higher,about 98% or higher, about 99% or higher, about 99.9% or higher and/orabout 99.99% and higher.

In some non-limiting examples, a conductive coating 830 in anopto-electronic device according to various example includes Mg. In somenon-limiting examples, the conductive coating 830 comprisessubstantially pure Mg. In some non-limiting examples, the conductivecoating 830 includes other metals in place of and/or in combination withMg. In some non-limiting examples, the conductive coating 830 includesan alloy of Mg with one or more other metals. In some non-limitingexamples, the conductive coating 830 includes an alloy of Mg with Yb,Cd, Zn, and/or Ag. In some non-limiting examples, such alloy may be abinary alloy having a composition ranging from between about 5 vol. % Mgand about 95 vol. % Mg, with the remainder being the other metal. Insome non-limiting examples, the conductive coating 830 includes a Mg:Agalloy having a composition ranging from between about 1:10 to about 10:1by volume.

In some non-limiting examples, the conductive coating 830 and/or theconductive coating material 831 in an opto-electronic device accordingto various examples includes Ag. In some non-limiting examples, theconductive coating 830 and/or the conductive coating material 831comprises substantially pure Ag. In some non-limiting examples, theconductive coating 830 and/or the conductive coating material 831includes other metals in place of and/or in combination with Ag. In somenon-limiting examples, the conductive coating 830 and/or the conductivecoating material 831 includes an alloy of Ag with one or more othermetals. In some non-limiting examples, the conductive coating 830 and/orthe conductive coating material 831 includes an alloy of Ag with Mg, Yb,and/or Zn. In some non-limiting examples, such alloy may be a binaryalloy having a composition from about 5 vol. % Ag to about 95 vol. % Ag,with the remainder being the other metal. In some non-limiting examples,the conductive coating 830 and/or the conductive coating material 831includes Ag and Mg. Non-limiting examples of such conductive coating 830and/or the conductive coating material 831 includes an Mg:Ag alloyhaving a composition from about 1:10 to about 10:1 by volume. In somenon-limiting examples, the conductive coating 830 and/or the conductivecoating material 831 includes Ag and Yb. Non-limiting examples of suchconductive coating 830 includes a Yb:Ag alloy having a composition fromabout 1:20 to about 10:1 by volume. In some non-limiting examples, theconductive coating 830 includes Mg and Yb, for example as an Mg:Yballoy. In some non-limiting examples, the conductive coating 830 and/orthe conductive coating material 831 includes Ag, Mg, and Yb, for exampleas an Ag:Mg:Yb alloy.

In some non-limiting examples, the conductive coating 830 includes twoor more layers having different compositions from one another. In somenon-limiting examples, two or more layers of the conductive coating 830include a different element from one another. Non-limiting examples ofsuch conductive coating 830 include multilayer coatings formed by:Yb/Ag, Yb/Mg, Yb/Mg:Ag, Mg/Ag, Yb/Yb:Ag, Yb/Ag/Mg, and/or Yb/Mg/Ag.

Patterning

As a result of the foregoing, it may be desirable to selectivelydeposit, across the lateral aspect 410 of the emissive region 1910 of a(sub-) pixel 340/264 x and/or the lateral aspect 420 of the non-emissiveregion(s) 1920 surrounding the emissive region 1910, a device feature,including without limitation, at least one of the first electrode 120,the second electrode 140, the auxiliary electrode 1750 and/or busbar4150 and/or a conductive element electrically coupled thereto, in apattern, on an exposed layer surface 111 of a frontplane 10 layer of thedevice 100. In some non-limiting examples, the first electrode 120, thesecond electrode 140, the auxiliary electrode 1750 and/or the busbar4150 may be deposited in at least one of a plurality of conductivecoatings 830.

However, it may not be feasible to employ a shadow mask such as an FMMthat may, in some non-limiting examples, be used to form relativelysmall features, with a feature size on the order of tens of microns orsmaller to achieve such patterning of a conductive coating 830, since,in some non-limiting examples:

-   -   an FMM may be deformed during a deposition process, especially        at high temperatures, such as may be employed for deposition of        a thin conductive film;    -   limitations on the mechanical (including, without limitation,        tensile) strength of the FMM and/or shadowing effects,        especially in a high-temperature deposition process, may impart        a constraint on an aspect ratio of features that may be        achievable using such FMMs;    -   the type and number of patterns that may be achievable using        such FMMs may be constrained since, by way of non-limiting        example, each part of the FMM will be physically supported so        that, in some non-limiting examples, some patterns may not be        achievable in a single processing stage, including by way of        non-limiting example, where a pattern specifies an isolated        feature;    -   FMMs may exhibit a tendency to warp during a high-temperature        deposition process, which may, in some non-limiting examples,        distort the shape and position of apertures therein, which may        cause the selective deposition pattern to be varied, with a        degradation in performance and/or yield;    -   FMMs that may be used to produce repeating structures spread        across the entire surface of a device 100, may call for a large        number of apertures to be formed in the FMM, which may        compromise the structural integrity of the FMM;    -   repeated use of FMMs in successive depositions, especially in a        metal deposition process, may cause the deposited material to        adhere thereto, which may obfuscate features of the FMM and        which may cause the selective deposition pattern to be varied,        with a degradation in performance and/or yield;    -   while FMMs may be periodically cleaned to remove adhered        non-metallic material, such cleaning procedures may not be        suitable for use with adhered metal, and even so, in some        non-limiting examples, may be time-consuming and/or expensive;        and    -   irrespective of any such cleaning processes, continued use of        such FMMs, especially in a high-temperature deposition process,        may render them ineffective at producing a desired patterning,        at which point they may be discarded and/or replaced, in a        complex and expensive process.

FIG. 5 shows an example cross-sectional view of a device 500 that issubstantially similar to the device 100, but further comprises aplurality of raised PDLs 440 across the lateral aspect(s) 420 ofnon-emissive regions 1920 surrounding the lateral aspect(s) 410 ofemissive region(s) 1910 corresponding to (sub-) pixel(s) 340/264 x.

When the conductive coating 830 is deposited, in some non-limitingexamples, using an open-mask and/or a mask-free deposition process, theconductive coating 830 is deposited across the lateral aspect(s) 410 ofemissive region(s) 1910 corresponding to (sub-) pixel(s) 340/264 x toform (in the figure) the second electrode 140 thereon, and also acrossthe lateral aspect(s) 420 of non-emissive regions 1920 surrounding them,to form regions of conductive coating 830 on top of the PDLs 440. Toensure that each (segment) of the second electrode 140 is notelectrically coupled to any of the at least one conductive region(s)830, a thickness of the PDL(s) 440 is greater than a thickness of thesecond electrode(s) 140. In some non-limiting examples, the PDL(s) 440may be provided, as shown in the figure, with an undercut profile tofurther decrease a likelihood that any (segment) of the secondelectrode(s) 140 will be electrically coupled to any of the at least oneconductive region(s) 830.

In some non-limiting examples, application of a barrier coating 1650over the device 500 may result in poor adhesion of the barrier coating1650 to the device 500, having regard to the highly non-uniform surfacetopography of the device 500.

In some non-limiting examples, it may be desirable to tune opticalmicrocavity effects associated with sub-pixel(s) 264 x of differentcolours (and/or wavelengths) by varying a thickness of the at least onesemiconducting layer 130 (and/or a layer thereof) across the lateralaspect 410 of emissive region(s) 1910 corresponding to sub-pixel(s) 264x of one colour relative to the lateral aspect 410 of emissive region(s)1910 corresponding to sub-pixel(s) 264 x of another colour. In somenon-limiting examples, the use of FMMs to perform patterning may notprovide a precision called for to provide such optical microcavitytuning effects in at least some cases and/or, in some non-limitingexamples, in a production environment for OLED displays 100.

Nucleation-Inhibiting and/or Promoting Material Properties

In some non-limiting examples, a conductive coating 830, that may beemployed as, or as at least one of a plurality of layers of thinconductive films to form a device feature, including without limitation,at least one of the first electrode 120, the first electrode 140, anauxiliary electrode 1750 and/or a busbar 4150 and/or a conductiveelement electrically coupled thereto, may exhibit a relatively lowaffinity towards being deposited on an exposed layer surface 111 of anunderlying material, so that the deposition of the conductive coating830 is inhibited.

The relative affinity or lack thereof of a material and/or a propertythereof to having a conductive coating 830 deposited thereon may bereferred to as being “nucleation-promoting” or “nucleation-inhibiting”respectively.

In the present disclosure, “nucleation-inhibiting” refers to a coating,material and/or a layer thereof that has a surface that exhibits arelatively low affinity for (deposition of) a conductive coating 830thereon, such that the deposition of the conductive coating 830 on suchsurface is inhibited.

In the present disclosure, “nucleation-promoting” refers to a coating,material and/or a layer thereof that has a surface that exhibits arelatively high affinity for (deposition of) a conductive coating 830thereon, such that the deposition of the conductive coating 830 on suchsurface is facilitated.

The term “nucleation” in these terms references the nucleation stage ofa thin film formation process, in which monomers in a vapor phasecondense onto the surface to form nuclei.

Without wishing to be bound by a particular theory, it is postulatedthat the shapes and sizes of such nuclei and the subsequent growth ofsuch nuclei into islands and thereafter into a thin film may depend upona number of factors, including without limitation, interfacial tensionsbetween the vapor, the surface and/or the condensed film nuclei.

In the present disclosure, such affinity may be measured in a number offashions.

One measure of a nucleation-inhibiting and/or nucleation-promotingproperty of a surface is the initial sticking probability S₀ of thesurface for a given electrically conductive material, including withoutlimitation, Mg. In the present disclosure, the terms “stickingprobability” and “sticking coefficient” may be used interchangeably.

In some non-limiting examples, the sticking probability S may be givenby:

$S = \frac{N_{ads}}{N_{total}}$

where N_(ads) is a number of adsorbed monomers (“adatoms”) that remainon an exposed layer surface 111 (that is, are incorporated into a film)and N_(total) is a total number of impinging monomers on the surface. Asticking probability S equal to 1 indicates that all monomers thatimpinge on the surface are adsorbed and subsequently incorporated into agrowing film. A sticking probability S equal to 0 indicates that allmonomers that impinge on the surface are desorbed and subsequently nofilm is formed on the surface. A sticking probability S of metals onvarious surface can be evaluated using various techniques of measuringthe sticking probability S, including without limitation, a dual quartzcrystal microbalance (QCM) technique as described by Walker et al., J.Phys. Chem. C 2007, 111, 765 (2006).

As the density of islands increases (e.g., increasing average filmthickness), a sticking probability S may change. By way of non-limitingexample, a low initial sticking probability S₀ may increase withincreasing average film thickness. This can be understood based on adifference in sticking probability S between an area of a surface withno islands, by way of non-limiting example, a bare substrate 110, and anarea with a high density of islands. By way of non-limiting example, amonomer that impinges on a surface of an island may have a stickingprobability S that approaches 1.

An initial sticking probability S₀ may therefore be specified as asticking probability S of a surface prior to the formation of anysignificant number of critical nuclei. One measure of an initialsticking probability S₀ can involve a sticking probability S of asurface for a material during an initial stage of deposition of thematerial, where an average thickness of the deposited material acrossthe surface is at or below a threshold value. In the description of somenon-limiting examples a threshold value for an initial stickingprobability S₀ can be specified as, by way of non-limiting example, 1nm. An average sticking probability S may then be given by:

S=S ₀(1−A _(nuc))+S _(nuc)(A _(nuc))

where S_(nuc) is a sticking probability S of an area covered by islands,and A_(nuc) is a percentage of an area of a substrate surface covered byislands.

Based on the energy profiles 610, 620, 630 shown in FIG. 6 , it may bepostulated that NIC 810 materials exhibiting relatively low activationenergy for desorption (E_(des) 631) and/or relatively high activationenergy for surface diffusion (E_(s) 631) may be particularlyadvantageous for use in various applications.

One measure of a nucleation-inhibiting and/or nucleation-promotingproperty of a surface is an initial deposition rate of a givenelectrically conductive material, including without limitation, Mg, onthe surface, relative to an initial deposition rate of the sameconductive material on a reference surface, where both surfaces aresubjected to and/or exposed to an evaporation flux of the conductivematerial.

Selective Coatings for Impacting Nucleation-Inhibiting and/or PromotingMaterial Properties

In some non-limiting examples, one or more selective coatings 710 (FIG.7 ) may be selectively deposited on at least a first portion 701 (FIG. 7) of an exposed layer surface 111 of an underlying material to bepresented for deposition of a thin film conductive coating 830 thereon.Such selective coating(s) 710 have a nucleation-inhibiting property(and/or conversely a nucleation-promoting property) with respect to theconductive coating 830 that differs from that of the exposed layersurface 111 of the underlying material. In some non-limiting examples,there may be a second portion 702 (FIG. 7 ) of the exposed layer surface111 of an underlying material to which no such selective coating(s) 710,has been deposited.

Such a selective coating 710 may be an NIC 810 and/or a nucleationpromoting coating (NPC 1120 (FIG. 11 )).

In some non-limiting examples, the NIC 810 may be disposed on an exposedlayer surface 111 of an underlying metallic coating 138, such as shownby way of non-limiting example, in FIG. 35 . It will be understood bythose having ordinary skill in the relevant art that such metalliccoating 138 may be (at least) one of the plurality of layers of thedevice 100. The metallic coating 138 may be comprised of a metalliccoating material. Those having ordinary skill in the relevant art willappreciate that the metallic coating 138 and the metallic coatingmaterial of which it is comprised, especially when disposed as a filmand under conditions and/or by mechanisms substantially similar to thoseemployed in depositing the second electrode 140, may exhibit largelysimilar optical and/or other properties.

In some non-limiting examples, sheet resistance is a property of acomponent, layer, and/or part that may alter a characteristic of anelectric current passing through such component, layer, and/or part. Insome non-limiting examples, a sheet resistance R1 of the metalliccoating 138 may generally correspond to a sheet resistance of themetallic coating 138 measured in isolation from other components,layers, and/or parts of the device 100. In some non-limiting examples,the metallic coating 138 may be formed as a thin film. Accordingly, insome non-limiting examples, the sheet resistance R1 for the metalliccoating 138 may be determined and/or calculated based on thecomposition, thickness, and/or morphology of such thin film. In somenon-limiting examples, the sheet resistance R1 may be about 0.1-1,000Ω/sqr, about 1-100 Ω/sqr, about 2-50 Ω/sqr, about 3-30 Ω/sqr, about 4-20Ω/sqr, about 5-15 Ω/sqr, and/or about 10-12 Ω/sqr.

In some non-limiting examples, a bond dissociation energy of a metal maycorrespond to a standard-state enthalpy change measured at 298 K fromthe breaking of a bond of a diatomic molecule formed by two identicalatoms of the metal. Bond dissociation energies may, by way ofnon-limiting example, be determined based on known literature, includingwithout limitation, Luo, Yu-ran, “Bond dissociation energies” (2010). Insome non-limiting examples, the metallic coating material may comprise ametal having a bond dissociation energy of at least 10 kJ/mol, at least50 kJ/mol, at least 100 kJ/mol, at least 150 kJ/mol, at least 180kJ/mol, and/or at least 200 kJ/mol.

In some non-limiting examples, the metallic coating material maycomprise a metal having an electronegativity that is less than about1.4, about 1.3, and/or about 1.2.

In some non-limiting examples, the metallic coating material maycomprise an element selected from potassium (K), sodium (Na), lithium(Li), barium (Ba), cesium (Cs), ytterbium (Yb), silver (Ag), gold (Au),copper (Cu), aluminum (AI), magnesium (Mg), zinc (Zn), cadmium (Cd), tin(Sn), nickel (Ni), titanium (Ti), palladium (Pd), chromium (Cr), iron(Fe), cobalt (Co), zirconium (Zr), platinum (Pt), vanadium (V), niobium(Nb), iridium (Ir), osmium (Os), tantalum (Ta), molybdenum (Mo), and/ortungsten (W). In some non-limiting examples, the element may compriseCu, Ag, and/or Au. In some non-limiting examples, the element may be Cu.In some non-limiting examples, the element may be Al. In somenon-limiting examples, the element may comprise Mg, Zn, Cd, and/or Yb.In some non-limiting examples, the element may comprise Sn, Ni, Ti, Pd,Cr, Fe, and/or Co. In some non-limiting examples, the element maycomprise Zr, Pt, V, Nb, Ir, and/or Os. In some non-limiting examples,the element may comprise Ta, Mo, and/or W. In some non-limitingexamples, the element may comprise Mg, Ag, Al, Yb, and/or Li. In somenon-limiting examples, the element may comprise Mg, Ag, and/or Yb. Insome non-limiting examples, the element may comprise Mg, and/or Ag. Insome non-limiting examples, the element may be Ag.

In some non-limiting examples, the metallic coating material maycomprise a pure metal. In some non-limiting examples, the metalliccoating material is a pure metal. In some non-limiting examples, themetallic coating material is pure Ag or substantially pure Ag. In somenon-limiting examples, the metallic coating material is pure Mg orsubstantially pure Mg. In some non-limiting examples, the metalliccoating material is pure Al or substantially pure Al.

In some non-limiting examples, the metallic coating material maycomprise an alloy. In some non-limiting examples, the alloy may be anAg-containing alloy, and/or an AgMg-containing alloy.

In some non-limiting examples, the metallic coating material maycomprise other metals in place of, and/or in combination with, Ag. Insome non-limiting examples, the metallic coating material may comprisean alloy of Ag with at least one other metal. In some non-limitingexamples, the metallic coating material may comprise an alloy of Ag withMg, and/or Yb. In some non-limiting examples, such alloy may be a binaryalloy having a composition from about 5 vol. % Ag to about 95 vol. % Ag,with the remainder being the other metal. In some non-limiting examples,the metallic coating material comprises Ag and Mg. In some non-limitingexamples, the metallic coating material comprises an Ag:Mg alloy havinga composition from about 1:10 to about 10:1 by volume. In somenon-limiting examples, the metallic coating material comprises Ag andYb. In some non-limiting examples, the metallic coating materialcomprises a Yb:Ag alloy having a composition from about 1:20 to about1-10:1 by volume. In some non-limiting examples, the metallic coatingmaterial comprises Mg and Yb. In some non-limiting examples, themetallic coating material comprises an Mg:Yb alloy. In some non-limitingexamples, the metallic coating material comprises Ag, Mg, and Yb. Insome non-limiting examples, the metallic coating material comprises anAg:Mg:Yb alloy.

In some non-limiting examples, the metallic coating material maycomprise oxygen (O). In some non-limiting examples, the metallic coatingmaterial may comprise at least one metal and O. In some non-limitingexamples, the metallic coating material may comprise a metal oxide. Insome non-limiting examples, the metal oxide comprises Zn, indium (I),tin (Sn), antimony (Sb), and/or gallium (Ga). In some non-limitingexamples, the metal oxide may be a transparent conducting oxide (TCO).In some non-limiting examples, the TCO may comprise an indium oxide, tinoxide, antimony oxide, and/or gallium oxide. In some non-limitingexamples, the TCO may comprise indium titanium oxide (ITO), ZnO, indiumzinc oxide (IZO), and/or indium gallium zinc oxide (IGZO). In somenon-limiting examples, the TCO may be electrically doped with otherelements.

In some non-limiting example, the metallic coating 138 may be formed bymetal and/or metal alloys.

In some non-limiting examples, the metallic coating 138 may comprise atleast one metal or metal alloy and at least one metal oxide.

In some non-limiting examples, the metallic coating 138 may comprise aplurality of layers of the metallic coating material. In somenon-limiting examples, the metallic coating material of a first one ofthe plurality of layers may be different from the metallic coatingmaterial of a second one of the plurality of layers. In somenon-limiting examples, the metallic coating material of the first one ofthe plurality of layers may comprise a metal and the metallic coatingmaterial of the second one of the plurality of layers may comprise ametal oxide.

In some non-limiting examples, the metallic coating material of at leastone of the plurality of layers may comprise Yb. In some non-limitingexamples, the metallic coating material of one of the plurality oflayers may comprise an Ag-containing alloy and/or an AgMg-containingalloy, and/or pure Ag, substantially pure Ag, pure Mg, and/orsubstantially pure Mg. In some non-limiting examples, the metalliccoating 138 is a bilayer Yb/AgMg coating.

In some non-limiting examples, a first one of the plurality of layersthat is proximate to the NIC 810 (top-most) may comprise an elementselected from Ag, Au, Cu, Al, Sn, Ni, Ti, Pd, Cr, Fe, Co, Zr, Pt, V, Nb,Ir, Os, Ta, Mo, and/or W. In some non-limiting examples, the element maycomprise Cu, Ag, and/or Au. In some non-limiting examples, the elementmay be Cu. In some non-limiting examples, the element may be Al. In somenon-limiting examples, the element may comprise Sn, Ti, Pd, Cr, Fe,and/or Co. In some non-limiting examples, the element may comprise Ni,Zr, Pt, V, Nb, Ir, and/or Os. In some non-limiting examples, the elementmay comprise Ta, Mo, and/or W. In some non-limiting examples, theelement may comprise Mg, Ag, and/or Al. In some non-limiting examples,the element may comprise Mg, and/or Ag. In some non-limiting examples,the element may be Ag.

In some non-limiting examples, the metallic coating 138 may comprise atleast one additional element. In some non-limiting examples, suchadditional element may be a non-metallic element. In some non-limitingexamples, the non-metallic material may be oxygen (O), sulfur (S),nitrogen (N), and/or carbon C. It will be appreciated by those havingordinary skill in the relevant art that, in some non-limiting examples,such additional element(s) may be incorporated into the metallic coating138 as a contaminant, due to the presence of such additional element(s)in the source material, equipment used for deposition, and/or the vacuumchamber environment. In some non-limiting examples, the concentration ofsuch additional element(s) may be limited to be below a thresholdconcentration. In some non-limiting examples, such additional element(s)may form a compound together with other element(s) of the metalliccoating 138. In some non-limiting examples, a concentration of thenon-metallic element in the conductive coating material may be less thanabout 1%, about 0.1%, about 0.001%, about 0.0001%, about 0.00001%, about0.000001% and/or about 0.0000001%. In some non-limiting examples, theconductive coating 830 has a composition in which a combined amount of Oand C therein is less than about 10%, about 5%, about 1%, about 0.1%,about 0.001%, about 0.0001%, about 0.00001%, about 0.000001%, and/orabout 0.0000001% In some non-limiting examples, the metallic coating 138may comprise a closed coating 4530. In some non-limiting examples, themetallic coating 138 may comprise a discontinuous coating 1050.

In some non-limiting examples, the metallic coating 138 may be disposedin a pattern that may be defined by at least one region therein that issubstantially devoid of a closed coating 4530 of the metallic coating138 on the first layer surface in the first portion 115. In somenon-limiting examples, the at least one region has disposed thereon, ametal patterning NIC 810. In some non-limiting examples, the at leastone region may separate the metallic coating 138 into a plurality ofdiscrete fragments thereof. In some non-limiting examples, at least twoof such plurality of discrete fragments of the metallic coating 138 maybe electrically coupled. In some non-limiting examples, at least two ofsuch plurality of discrete fragments of the metallic coating 138 may beeach electrically coupled to a common conductive layer or coating,including without limitation, the conductive coating 830, to allow theflow of electric current between them. In some non-limiting examples, atleast two of such plurality of discrete fragments of the metalliccoating 138 may be electrically insulated from one another.

In the present disclosure, in some non-limiting examples, as the contextdictates, the terms “NIC” and “patterning coating” may be usedinterchangeably to refer to similar concepts, and references to an NIC810 herein, in the context of being selectively deposited to pattern aconductive coating 830 may, in some non-limiting examples, be applicableto a patterning coating 810 in the context of selective depositionthereof to pattern an electrode coating 830.

Similarly, in some non-limiting examples, as the context dictates, theterm “NPC” and “patterning coating” may be used interchangeably to referto similar concepts, and reference to an NPC 1120 herein, in the contextof being selectively deposited to pattern a conductive coating 830 may,in some non-limiting examples, be applicable to a patterning coating1120 in the context of selective deposition thereof to pattern anelectrode coating 830.

In some non-limiting examples, reference to a patterning coating 810,1120 may signify a coating having a specific composition as describedherein.

It will be appreciated by those having ordinary skill in the relevantart that the use of such a selective coating 710 may, in somenon-limiting examples, facilitate and/or permit the selective depositionof the conductive coating 830 without employing an FMM during the stageof depositing the conductive coating 830.

In some non-limiting examples, such selective deposition of theconductive coating 830 may be in a pattern. In some non-limitingexamples, such pattern may facilitate providing and/or increasingtransmissivity of at least one of the top and/or bottom of the device100, within the lateral aspect 410 of one or more emissive region(s)1910 of a (sub-) pixel 340/264 x and/or within the lateral aspect 420 ofone or more non-emissive region(s) 1920 that may, in some non-limitingexamples, surround such emissive region(s) 1910.

In some non-limiting examples, the conductive coating 830 may bedeposited on a conductive structure and/or in some non-limitingexamples, form a layer thereof, for the device 100, which in somenon-limiting examples may be the first electrode 120 and/or the secondelectrode 140 to act as one of an anode 341 and/or a cathode 342, and/oran auxiliary electrode 1750 and/or busbar 4150 to support conductivitythereof and/or in some non-limiting examples, be electrically coupledthereto.

In some non-limiting examples, an NIC 810 for a given conductive coating830, including without limitation Mg, may refer to a coating having asurface that exhibits a relatively low initial sticking probability S₀for the conductive coating 830 (in the example Mg) in vapor form, suchthat deposition of the conductive coating 830 (in the example Mg) ontothe exposed layer surface 111 is inhibited. Thus, in some non-limitingexamples, selective deposition of an NIC 810 may reduce an initialsticking probability S₀ of an exposed layer surface 111 (of the NIC 810)presented for deposition of the conductive coating 830 thereon.

In some non-limiting examples, an NPC 1120, for a given conductivecoating 830, including without limitation Mg, may refer to a coatinghaving an exposed layer surface 111 that exhibits a relatively highinitial sticking probability S₀ for the conductive coating 830 in vaporform, such that deposition of the conductive coating 830 onto theexposed layer surface 111 is facilitated. Thus, in some non-limitingexamples, selective deposition of an NPC 1120 may increase an initialsticking probability S₀ of an exposed layer surface 111 (of the NPC1120) presented for deposition of the conductive coating 830 thereon.

When the selective coating 710 is an NIC 810, the first portion 701 ofthe exposed layer surface 111 of the underlying material, upon which theNIC 810 is deposited, will thereafter present a treated surface (of theNIC 810) whose nucleation-inhibiting property has been increased oralternatively, whose nucleation-promoting property has been reduced (ineither case, the surface of the NIC 810 deposited on the first portion701), such that it has a reduced affinity for deposition of theconductive coating 830 thereon relative to that of the exposed layersurface 111 of the underlying material upon which the NIC 810 has beendeposited. By contrast the second portion 702, upon which no such NIC810 has been deposited, will continue to present an exposed layersurface 111 (of the underlying substrate 110) whosenucleation-inhibiting property or alternatively, whosenucleation-promoting property (in either case, the exposed layer surface111 of the underlying substrate 110 that is substantially devoid of theselective coating 710), has an affinity for deposition of the conductivecoating 830 thereon that has not been substantially altered.

When the selective coating 710 is an NPC 1120, the first portion 701 ofthe exposed layer surface 111 of the underlying material, upon which theNPC 1120 is deposited, will thereafter present a treated surface (of theNPC 1120) whose nucleation-inhibiting property has been reduced oralternatively, whose nucleation-promoting property has been increased(in either case, the surface of the NPC 1120 deposited on the firstportion 701), such that it has an increased affinity for deposition ofthe conductive coating 830 thereon relative to that of the exposed layersurface 111 of the underlying material upon which the NPC 1120 has beendeposited. By contrast, the second portion 702, upon which no such NPC1120 has been deposited, will continue to present an exposed layersurface 111 (of the underlying substrate 110) whosenucleation-inhibiting property or alternatively, whosenucleation-promoting property (in either case, the exposed layer surface111 of the underlying substrate 110 that is substantially devoid of theNPC 1120), has an affinity for deposition of the conductive coating 830thereon that has not been substantially altered.

In some non-limiting examples, both an NIC 810 and an NPC 1120 may beselectively deposited on respective first portions 701 and NPC portions1103 (FIG. 11A) of an exposed layer surface 111 of an underlyingmaterial to respectively alter a nucleation-inhibiting property (and/orconversely a nucleation-promoting property) of the exposed layer surface111 to be presented for deposition of a conductive coating 830 thereon.In some non-limiting examples, there may be a second portion 702 of theexposed layer surface 111 of an underlying material to which noselective coating 710 has been deposited, such that thenucleation-inhibiting property (and/or conversely itsnucleation-promoting property) to be presented for deposition of theconductive coating 830 thereon is not substantially altered.

In some non-limiting examples, the first portion 701 and NPC portion1103 may overlap, such that a first coating of an NIC 810 and/or an NPC1120 may be selectively deposited on the exposed layer surface 111 ofthe underlying material in such overlapping region and the secondcoating of the NIC 810 and/or the NPC 1120 may be selectively depositedon the treated exposed layer surface 111 of the first coating. In somenon-limiting examples, the first coating is an NIC 810. In somenon-limiting examples, the first coating is an NPC 1120.

In some non-limiting examples, the first portion 701 (and/or NPC portion1103) to which the selective coating 710 has been deposited, maycomprise a removal region, in which the deposited selective coating 710has been removed, to present the uncovered surface of the underlyingmaterial for deposition of the conductive coating 830 thereon, such thatthe nucleation-inhibiting property (and/or conversely itsnucleation-promoting property) to be presented for deposition of theconductive coating 830 thereon is not substantially altered.

In some non-limiting examples, the underlying material may be at leastone layer selected from the substrate 110 and/or at least one of thefrontplane 10 layers, including without limitation, the first electrode120, the second electrode 140, the at least one semiconducting layer 130(and/or at least one of the layers thereof) and/or any combination ofany of these.

In some non-limiting examples, the conductive coating 830 may havespecific material properties. In some non-limiting examples, theconductive coating 830 may comprise Mg, whether alone or in a compoundand/or alloy.

By way of non-limiting example, pure and/or substantially pure Mg maynot be readily deposited onto some organic surfaces due to a lowsticking probability S of Mg on some organic surfaces.

Deposition of Selective Coatings

In some non-limiting examples, a thin film comprising the selectivecoating 710, may be selectively deposited and/or processed using avariety of techniques, including without limitation, evaporation(including without limitation), thermal evaporation and/or electron beamevaporation), photolithography, printing (including without limitation,ink jet and/or vapor jet printing, reel-to-reel printing and/ormicro-contact transfer printing), PVD (including without limitation,sputtering), CVD (including without limitation, PECVD and/or OVPD),laser annealing, LITI patterning, ALD, coating (including withoutlimitation, spin coating, dip coating, line coating and/or spraycoating), and/or combinations of any two or more thereof.

FIG. 7 is an example schematic diagram illustrating a non-limitingexample of an evaporative process, shown generally at 700, in a chamber70, for selectively depositing a selective coating 710 onto a firstportion 701 of an exposed layer surface 111 of an underlying material(in the figure, for purposes of simplicity of illustration only, thesubstrate 110).

In the process 700, a quantity of a selective coating material 711, isheated under vacuum, to evaporate and/or sublime 712 the selectivecoating material 711. In some non-limiting examples, the selectivecoating material 711 comprises entirely, and/or substantially, amaterial used to form the selective coating 710. Evaporated selectivecoating material 712 is directed through the chamber 70, including in adirection indicated by arrow 71, toward the exposed layer surface 111.When the evaporated selective coating material 712 is incident on theexposed layer surface 111, that is, in the first portion 701, theselective coating 710 is formed thereon.

In some non-limiting examples, as shown in the figure for the process700, the selective coating 710 may be selectively deposited only onto aportion, in the example illustrated, the first portion 701, of theexposed layer surface 111, by the interposition, between the selectivecoating material 711 and the exposed layer surface 111, of a shadow mask715, which in some non-limiting examples, may be an FMM. The shadow mask715 has at least one aperture 716 extending therethrough such that apart of the evaporated selective coating material 712 passes through theaperture 716 and is incident on the exposed layer surface 111 to formthe selective coating 710. Where the evaporated selective coatingmaterial 712 does not pass through the aperture 716 but is incident onthe surface 717 of the shadow mask 715, it is precluded from beingdisposed on the exposed layer surface 111 to form the selective coating710 within the second portion 703. The second portion 702 of the exposedlayer surface 111 is thus substantially devoid of the selective coating710. In some non-limiting examples (not shown), the selective coatingmaterial 711 that is incident on the shadow mask 715 may be deposited onthe surface 717 thereof.

Accordingly, a patterned surface is produced upon completion of thedeposition of the selective coating 710.

In some non-limiting examples, for purposes of simplicity ofillustration, the selective coating 710 employed in FIG. 7 may be an NIC810. In some non-limiting examples, for purposes of simplicity ofillustration, the selective coating 710 employed in FIG. 7 may be an NPC1120.

FIG. 8 is an example schematic diagram illustrating a non-limitingexample of a result of an evaporative process, shown generally at 800,in a chamber 70, for selectively depositing a conductive coating 830onto a second portion 702 of an exposed layer surface 111 of anunderlying material (in the figure, for purposes of simplicity ofillustration only, the substrate 110) that is substantially devoid ofthe NIC 810 that was selectively deposited onto a first portion 701,including without limitation, by the evaporative process 700 of FIG. 7 .In some non-limiting examples, the second portion 702 comprises thatpart of the exposed layer surface 111 that lies beyond the first portion701.

Once the NIC 810 has been deposited on a first portion 701 of an exposedlayer surface 111 of an underlying material (in the figure, thesubstrate 110), the conductive coating 830 may be deposited on thesecond portion 702 of the exposed layer surface 111 that issubstantially devoid of the NIC 810.

In the process 800, a quantity of a conductive coating material 831, isheated under vacuum, to evaporate and/or sublime 832 the conductivecoating material 831. In some non-limiting examples, the conductivecoating material 831 comprises entirely, and/or substantially, amaterial used to form the conductive coating 830. Evaporated conductivecoating material 832 is directed inside the chamber 70, including in adirection indicated by arrow 81, toward the exposed layer surface 111 ofthe first portion 701 and of the second portion 702. When the evaporatedconductive coating material 832 is incident on the second portion 702 ofthe exposed layer surface 111, the conductive coating 830 is formedthereon.

In some non-limiting examples, deposition of the conductive coatingmaterial 831 may be performed using an open mask and/or mask-freedeposition process, such that the conductive coating 830 is formedsubstantially across the entire exposed layer surface 111 of theunderlying material (in the figure, the substrate 110) to produce atreated surface (of the conductive coating 830).

It will be appreciated by those having ordinary skill in the relevantart that, contrary to that of an FMM, the feature size of an open maskis generally comparable to the size of a device 100 being manufactured.In some non-limiting examples, such an open mask may have an aperturethat may generally correspond to a size of the device 100, which in somenon-limiting examples, may correspond, without limitation, to about 1inch for micro-displays, about 4-6 inches for mobile displays, and/orabout 8-17 inches for laptop and/or tablet displays, so as to mask edgesof such device 100 during manufacturing. In some non-limiting examples,the feature size of an open mask may be on the order of about 1 cmand/or greater. In some non-limiting examples, an aperture formed in anopen mask may in some non-limiting examples be sized to encompass thelateral aspect(s) 410 of a plurality of emissive regions 1910 eachcorresponding to a (sub-) pixel 340/264 x and/or surrounding and/or thelateral aspect(s) 420 of surrounding and/or intervening non-emissiveregion(s) 1920.

It will be appreciated by those having ordinary skill in the relevantart that, in some non-limiting examples, the use of an open mask may beomitted, if desired. In some non-limiting examples, an open maskdeposition process described herein may alternatively be conductedwithout the use of an open mask, such that an entire target exposedlayer surface 111 may be exposed.

In some non-limiting examples, as shown in the figure for the process800, deposition of the conductive coating 830 may be performed using anopen mask and/or mask-free deposition process, such that the conductivecoating 830 is formed substantially across the entire exposed layersurface 111 of the underlying material (in the figure, of the substrate110) to produce a treated surface (of the conductive coating 830).

Indeed, as shown in FIG. 8 , the evaporated conductive coating material832 is incident both on an exposed layer surface 111 of NIC 810 acrossthe first portion 701 as well as the exposed layer surface 111 of thesubstrate 110 across the second portion 702 that is substantially devoidof NIC 810.

Since the exposed layer surface 111 of the NIC 810 in the first portion701 exhibits a relatively low initial sticking probability S₀ for theconductive coating 830 compared to the exposed layer surface 111 of thesubstrate 110 in the second portion 702, the conductive coating 830 isselectively deposited substantially only on the exposed layer surface111 of the substrate 110 in the second portion 702 that is substantiallydevoid of the NIC 810. By contrast, the evaporated conductive coatingmaterial 832 incident on the exposed layer surface 111 of NIC 810 acrossthe first portion 701 tends not to be deposited, as shown (833) and theexposed layer surface 111 of NIC 810 across the first portion 701 issubstantially devoid of the conductive coating 830. Although not shownin FIG. 8 , in some non-limiting examples, the exposed layer surface 111of the NIC 810 across the first portion 701 is not substantially devoidof the material of the conductive coating 830 but does not amount to acoating film of the conductive coating 830. Rather, as discussed indetail later below, the exposed layer surface 111 of the NIC 810 mayhave a discontinuous coating of the material of the conductive coating830 deposited thereon and/or an intermediate stage conductive thin film.

In some non-limiting examples, an initial deposition rate of theevaporated conductive coating material 832 on the exposed layer surface111 of the substrate 110 in the second portion 702 may be at leastand/or greater than about 200 times, at least and/or greater than about550 times, at least and/or greater than about 900 times, at least and/orgreater than about 1,000 times, at least and/or greater than about 1,500times, at least and/or greater than about 1,900 times and/or at leastand/or greater than about 2,000 times an initial deposition rate of theevaporated conductive coating material 832 on the exposed layer surface111 of the NIC 810 in the first portion 701.

The foregoing may be combined in order to effect the selectivedeposition of at least one conductive coating 830 to form a devicefeature, including without limitation, a patterned electrode 120, 140,1750, 4150 and/or a conductive element electrically coupled thereto,without employing an FMM within the conductive coating 830 depositionprocess. In some non-limiting examples, such patterning may permitand/or enhance the transmissivity of the device 100.

In some non-limiting examples, the selective coating 710, which may bean NIC 810 and/or an NPC 1120 may be applied a plurality of times duringthe manufacturing process of the device 100, in order to pattern aplurality of electrodes 120, 140, 1750, 4150 and/or various layersthereof and/or a device feature comprising a conductive coating 830electrically coupled thereto.

FIGS. 9A-9D illustrate non-limiting examples of open masks.

FIG. 9A illustrates a non-limiting example of an open mask 900 havingand/or defining an aperture 910 formed therein. In some non-limitingexamples, such as shown, the aperture 910 of the open mask 900 issmaller than a size of a device 100, such that when the mask 900 isoverlaid on the device 100, the mask 900 covers edges of the device 100.In some non-limiting examples, as shown, the lateral aspect(s) 410 ofthe emissive regions 1910 corresponding to all and/or substantially allof the (sub-) pixel(s) 340/264 x of the device 100 are exposed throughthe aperture 910, while an unexposed region 920 is formed between outeredges 91 of the device 100 and the aperture 910. It will be appreciatedby those having ordinary skill in the relevant art that, in somenon-limiting examples, electrical contacts and/or other components (notshown) of the device 100 may be located in such unexposed region 920,such that these components remain substantially unaffected throughout anopen mask deposition process.

FIG. 9B illustrates a non-limiting example of an open mask 901 havingand/or defining an aperture 911 formed therein that is smaller than theaperture 910 of FIG. 9A, such that when the mask 901 is overlaid on thedevice 100, the mask 901 covers at least the lateral aspect(s) 410 a ofthe emissive region(s) 1910 corresponding to at least some (sub-)pixel(s) 340/264 x. As shown, in some non-limiting examples, the lateralaspect(s) 410 a of the emissive region(s) 1910 corresponding tooutermost (sub-) pixel(s) 340/264 x are located within an unexposedregion 913 of the device 100, formed between the outer edges 91 of thedevice 100 and the aperture 911, are masked during an open maskdeposition process to inhibit evaporated conductive coating material 832from being incident on the unexposed region 913.

FIG. 9C illustrates a non-limiting example of an open mask 902 havingand/or defining an aperture 912 formed therein defines a pattern thatcovers the lateral aspect(s) 410 a of the emissive region(s) 1910corresponding to at least some (sub-) pixel(s) 340/264 x, while exposingthe lateral aspect(s) 410 b of the emissive region(s) 1910 correspondingto at least some (sub-) pixel(s) 340/264 x. As shown, in somenon-limiting examples, the lateral aspect(s) 410 a of the emissiveregion(s) 1910 corresponding to at least some (sub-) pixel(s) 340/264 xlocated within an unexposed region 914 of the device 100, are maskedduring an open mask deposition process to inhibit evaporated conductivecoating material 830 from being incident on the unexposed region 914.

While in FIGS. 9B-9C, the lateral aspects 410 a of the emissiveregion(s) 1910 corresponding to at least some of the outermost (sub-)pixel(s) 340/264 x have been masked, as illustrated, those havingordinary skill in the relevant art will appreciate that, in somenon-limiting examples, an aperture of an open mask 900-902 may be shapedto mask the lateral aspects 410 of other emissive region(s) 1910 and/orthe lateral aspects 420 of non-emissive region(s) 1920 of the device100.

Furthermore, while FIGS. 9A-9C show open masks 900-902 having a singleaperture 910-912, those having ordinary skill in the relevant art willappreciate that such open masks 900-902 may, in some non-limitingexamples (not shown), additional apertures (not shown) for exposingmultiple regions of an exposed layer surface 111 of an underlyingmaterial of a device 100.

FIG. 9D illustrates a non-limiting example of an open mask 903 havingand/or defining a plurality of apertures 917 a-917 d. The apertures 917a-917 d are, in some non-limiting examples, positioned such that theymay selectively expose certain regions 921 of the device 100, whilemasking other regions 922. In some non-limiting examples, the lateralaspects 410 b of certain emissive region(s) 1910 corresponding to atleast some (sub-) pixel(s) 340/264 x are exposed through the apertures917 a-917 d in the regions 921, while the lateral aspects 410 a of otheremissive region(s) 1910 corresponding to at least one some (sub-)pixel(s) 340/264 x lie within regions 922 and are thus masked.

Turning now to FIG. 10A there is shown an example version 1000 of thedevice 100 shown in FIG. 1 , but with a number of additional depositionsteps that are described herein.

The device 1000 shows a lateral aspect of the exposed layer surface 111of the underlying material. The lateral aspect comprises a first portion1001 and a second portion 1002. In the first portion 1001, an NIC 810 isdisposed on the exposed layer surface 111. However, in the secondportion 1002, the exposed layer surface 111 is substantially devoid ofthe NIC 810.

In some non-limiting examples, the first portion 1001 and the secondportion 1002 are substantially adjacent to one another in a lateralaspect.

In some non-limiting examples, the exposed layer surface 1001 of thefirst portion 1001 and the exposed layer surface 111 of the secondportion 1002 are substantially proximate to one another in across-sectional aspect. That is to say, while there may be one or moreintervening layers between the exposed layer surface 111 of the firstportion 1001 and the exposed layer surface 111 of the second portion1002, the difference between them caused thereby is, in somenon-limiting examples, a fraction of the lateral extent of at least oneof the first portion 1001 and the second portion 1002.

After selective deposition of the NIC 810 across the first portion 1001,the conductive coating 830 is deposited over the device 1000, in somenon-limiting examples, using an open mask and/or a mask-free depositionprocess.

The NIC 810 provides, within the first portion 1001, a surface with arelatively low initial sticking probability S₀, for the conductivecoating 830, and that is substantially less than the initial stickingprobability S₀, for the conductive coating 830, of the exposed layersurface 111 of the underlying material of the device 1000 within thesecond portion 1002.

Thus, the conductive coating 830 is formed as a closed film in thesecond portion 1002, while the first portion 1001 is substantiallydevoid of the conductive coating 830.

In this fashion, the NIC 810 may be selectively deposited, includingusing a shadow mask, to allow the conductive coating 830 to bedeposited, including without limitation, using an open mask and/or amask-free deposition process, so as to form a device feature, includingwithout limitation, at least one of the first electrode 120, the secondelectrode 140, the auxiliary electrode 1750, a busbar 4150 and/or atleast one layer thereof, and/or a conductive element electricallycoupled thereto.

Turning now to FIG. 10B, there is shown an example 1010 of an exampleversion of the device 1000.

The device 1010 shows, contrary to the device 1000 of FIG. 10A, in whichthe first portion 1001 is shown to be substantially devoid of theconductive coating 830, a first portion 1001 that is substantiallydevoid of a closed film 4530 of the conductive coating 830. In FIG. 10B,due to the presence of the NIC 810 in the first portion 1001, theconductive coating material 831 is deposited as a discontinuous coating1050 on an exposed layer surface 1011 of the NIC 810 in the firstportion 1001. In some non-limiting examples, the discontinuous coating1050 comprises a plurality of discrete islands. In some non-limitingexamples, at least some of the islands are disconnected from oneanother. In other words, in some non-limiting examples, thediscontinuous coating 1050 may comprise features that are physicallyseparated from one another, such that the discontinuous coating 1050does not form a continuous layer.

In this fashion, the NIC 810 may be selectively deposited, includingusing a shadow mask, to allow the conductive coating 830 to bedeposited, including without limitation, using an open mask and/or amask-free deposition process, so as to form a device feature, includingwithout limitation, at least one of the first electrode 120, the secondelectrode 140, the auxiliary electrode 1750, a busbar 4150 and/or atleast one layer thereof, and/or a conductive element electricallycoupled thereto.

Without wishing to be limited to any particular theory, it may bepostulated that during the deposition of the conductive coating 830,some vapor monomers of the conductive coating material 831 impinging onthe exposed layer surface 1011 of the NIC 810, may condense to formsmall clusters and/or islands thereon. However, substantial growth ofsuch clusters and/or islands, which, if left unimpeded, may lead topossible formation of a substantially closed film 4530 of the conductivecoating material 831 on the exposed layer surface 1011 of the NIC 810,is inhibited due to one or more properties and/or features of the NIC810. Accordingly, in some non-limiting examples, the discontinuouscoating 1050 comprises the conductive coating material 831 for formingthe conductive coating 830. In some non-limiting examples, a peakabsorption wavelength of the discontinuous coating 1050 may be less thana peak wavelength of the photon(s) emitted and/or transmitted by thedevice 1020. By way of non-limiting example, the discontinuous coating1050 may exhibit a peak absorption at a wavelength less than about 470nm, less than about 460 nm, less than about 455 nm, less than about 450nm, less than about 445 nm, less than about 440 nm, less than about 430nm, less than about 420 nm, and/or less than about 400 nm.

In some non-limiting examples, the discontinuous coating 1050 containingthe clusters and/or islands may be arranged to be on, and/or in physicalcontact with, and/or proximate to, the NIC 810.

FIG. 10C is a simplified example plan view of the first portion 1001 ofthe device 1010 according to the non-limiting example of FIG. 10B.

Turning now to FIG. 10D, there is shown an example version 1020 of asimplified version of the device 1020 shown in FIG. 10B, in which thereis shown a third portion 1003 arranged between the first portion 1001and the second portion 1002 in a lateral aspect of the device 1020.Although not shown as such, in some non-limiting examples, the thirdportion 1003 may be considered to be a part of the first portion 1001,representing an extremity thereof and/or an interface with the secondportion 1002. In some non-limiting examples, the third portion 1003comprises the conductive coating 830 covering at least a portion of theexposed layer surface 1011 of the underlying material, which, in somenon-limiting examples, may comprise the NIC 810 in the third portion1003 as well as the first portion 1001. In some non-limiting examples, athickness of the conductive coating 830 in the third portion 1003 may beless than a thickness of the conductive coating 830 in the secondportion 1002. Although not specifically illustrated in FIG. 10C, athickness of the NIC 810 in the third portion 1003 may be less than athickness of the NIC 810 in the first portion 1001.

In some non-limiting examples, the conductive coating 830 in the thirdportion 1003 comprises at least one projection and/or at least onerecess in a lateral aspect of the device 1020. In some non-limitingexamples, the conductive coating 830 in the third portion 1003 maycomprise an intermediate stage coating, in some non-limiting examples,having a plurality of apertures, including without limitation,pin-holes, tears and/or cracks.

FIG. 10E is a simplified example plan view of a part of the device 1020,showing the third portion 1003 arranged between (parts of the firstportion 1001 and the second portion 1002). In some non-limitingexamples, the conductive coating 830 in the third portion 1003, and insome non-limiting examples, encroaching into the first portion 1001 theconductive coating 830 may comprise at least one dendritic projection1021 that, in some non-limiting examples, may extend laterally towardand/or encroach at least partially into the adjacent first portion 1001.The at least one dendritic projections 1021 coat the exposed layersurface 1011 of the underlying material, which in some non-limitingexamples may be the NIC 810. In some non-limiting examples, at least onepart of the exposed layer surface 1011 of the underlying material, whichin some non-limiting examples may be the NIC 810, may not be covered bythe conductive coating 830 in the third portion 1003, and in somenon-limiting examples, extending into the second portion 1002, maycomprise at least one dendritic recess 1022 that, in some non-limitingexamples, may extend laterally toward and/or extend at least partiallyinto the adjacent second portion 1002.

Without wishing to be bound by any particular theory, it may bepostulated that at least one projection, including without limitation,the at least one dendritic projections 1021, and/or at least one recess,including without limitation, the at least one dendritic recesses 1022may be formed at and/or near and/or because of at least one localizednon-uniformity in at least one property and/or feature of the NIC 810.By way of non-limiting example, at least one localized area of the NIC810 may exhibit a variation in a critical surface tension, a physicaldiscontinuity in, and/or a domain boundary of a thin film coatingthereof. In some non-limiting examples, such variation may be formedbetween adjacent crystallites and may cause the conductive coatingmaterial 831 to be selectively deposited, thus resulting in the at leastone projection and/or at least one recess. In some non-limitingexamples, the at least one dendritic projection 1021 may comprise atleast one feature formed by coalescence of at least one island and/orcluster of the discontinuous coating 1050 with another at least oneisland and/or cluster of the discontinuous coating 1050 and/or with theconductive coating 830.

In some non-limiting examples, the third portion 1003 may comprise atleast one area that is substantially devoid of the conductive coatingmaterial 831, including without limitation, a gap in the discontinuouscoating 1050, a gap between at least one feature of at least onedendritic projection 1021 and/or at least one feature of at least onedendritic recess 1022. In some non-limiting examples, a surface coverageof the conductive coating material 831 in the third portion 1003 may be,in some non-limiting examples, between about 30% to about 90%, and/orbetween about 40% to about 80%.

Thus, the first portion 1001 is substantially devoid of the conductivecoating 830.

In this fashion, the NIC 810 may be selectively deposited, includingusing a shadow mask, to allow the conductive coating 830 to bedeposited, including without limitation, using an open mask and/or amask-free deposition process, so as to form a device feature, includingwithout limitation, at least one of the first electrode 120, the secondelectrode 140, the auxiliary electrode 1750, a busbar 4150 and/or atleast one layer thereof, and/or a conductive element electricallycoupled thereto.

FIGS. 11A-11B illustrate a non-limiting example of an evaporativeprocess, shown generally at 1100, in a chamber 70, for selectivelydepositing a conductive coating 830 onto a second portion 702 of anexposed layer surface 111 of an underlying material (in the figure, forpurposes of simplicity of illustration only, the substrate 110), that issubstantially devoid of the NIC 810 that was selectively deposited ontoa first portion 701, and onto an NPC portion 1103 of the first portion701, on which the NIC 810 was deposited, including without limitation,by the evaporative process 700 of FIG. 7 .

FIG. 11A describes a stage 1101 of the process 1100, in which, once theNIC 810 has been deposited on the first portion 701 of an exposed layersurface 111 of an underlying material (in the figure, the substrate110), the NPC 1120 may be deposited on the NPC portion 1103 of theexposed layer surface 111 of the NIC 810 disposed on the substrate 110in the first portion 701. In the figure, by way of non-limiting example,the NPC portion 1103 extends completely within the first portion 701.

In the stage 1101, a quantity of an NPC material 1121, is heated undervacuum, to evaporate and/or sublime 1122 the NPC material 1121. In somenon-limiting examples, the NPC material 1121 comprises entirely, and/orsubstantially, a material used to form the NPC 1120. Evaporated NPCmaterial 1122 is directed through the chamber 70, including in adirection indicated by arrow 1110, toward the exposed layer surface 111of the first portion 701 and of the NPC portion 1103. When theevaporated NPC material 1122 is incident on the NPC portion 1103 of theexposed layer surface 111, the NPC 1120 is formed thereon.

In some non-limiting examples, deposition of the NPC material 1121 maybe performed using an open mask and/or a mask-free deposition technique,such that the NPC 1120 is formed substantially across the entire exposedlayer surface 111 of the underlying material (which could be, in thefigure, the NIC 810 throughout the first portion 701 and/or thesubstrate 110 through the second portion 702) to produce a treatedsurface (of the NPC 1120).

In some non-limiting examples, as shown in the figure for the stage1101, the NPC 1120 may be selectively deposited only onto a portion, inthe example illustrated, the NPC portion 1103, of the exposed layersurface 111 (in the figure, of the NIC 810), by the interposition,between the NPC material 1121 and the exposed layer surface 111, of ashadow mask 1125, which in some non-limiting examples, may be an FMM.The shadow mask 1125 has at least one aperture 1126 extendingtherethrough such that a part of the evaporated NPC material 1122 passesthrough the aperture 1126 and is incident on the exposed layer surface111 (in the figure, by way of non-limiting example, of the NIC 810within the NPC portion 1103 only) to form the NPC 1120. Where theevaporated NPC material 1122 does not pass through the aperture 1126 butis incident on the surface 1127 of the shadow mask 1125, it is precludedfrom being disposed on the exposed layer surface 111 to form the NPC1120. The portion 1102 of the exposed layer surface 111 that lies beyondthe NPC portion 1103, is thus substantially devoid of the NPC 1120. Insome non-limiting examples (not shown), the evaporated NPC material 1122that is incident on the shadow mask 1125 may be deposited on the surface1127 thereof.

While the exposed layer surface 111 of the NIC 810 in the first portion701 exhibits a relatively low initial sticking probability S₀ for theconductive coating 830, in some non-limiting examples, this may notnecessarily be the case for the NPC coating 1120, such that the NPCcoating 1120 is still selectively deposited on the exposed layer surface(in the figure, of the NIC 810) in the NPC portion 1103.

Accordingly, a patterned surface is produced upon completion of thedeposition of the NPC 1120.

FIG. 11B describes a stage 1104 of the process 1100, in which, once theNIC 810 has been deposited on the first portion 701 of an exposed layersurface 111 of an underlying material (in the figure, the substrate 110)and the NPC 1120 has been deposited on the NPC portion 1103 of theexposed layer surface 111 (in the figure, of the NIC 810), theconductive coating 830 may be deposited on the NPC portion 1103 and thesecond portion 702 of the exposed layer surface 111 (in the figure, thesubstrate 110).

In the stage 1104, a quantity of a conductive coating material 831, isheated under vacuum, to evaporate and/or sublime 832 the conductivecoating material 831. In some non-limiting examples, the conductivecoating material 831 comprises entirely, and/or substantially, amaterial used to form the conductive coating 830. Evaporated conductivecoating material 832 is directed through the chamber 70, including in adirection indicated by arrow 1120, toward the exposed layer surface 111of the first portion 701, of the NPC portion 1103 and of the secondportion 702. When the evaporated conductive coating material 832 isincident on the NPC portion 1103 of the exposed layer surface 111 (ofthe NPC 1120) and on the second portion 702 of the exposed layer surface111 (of the substrate 110), that is, other than on the exposed layersurface 111 of the NIC 810, the conductive coating 830 is formedthereon.

In some non-limiting examples, as shown in the figure for the stage1104, deposition of the conductive coating 830 may be performed using anopen mask and/or mask-free deposition process, such that the conductivecoating 830 is formed substantially across the entire exposed layersurface 111 of the underlying material (other than where the underlyingmaterial is the NIC 810) to produce a treated surface (of the conductivecoating 830).

Indeed, as shown in FIG. 11B, the evaporated conductive coating material832 is incident both on an exposed layer surface 111 of NIC 810 acrossthe first portion 701 that lies beyond the NPC portion 1103, as well asthe exposed layer surface 111 of the NPC 1120 across the NPC portion1103 and the exposed layer surface 111 of the substrate 110 across thesecond portion 702 that is substantially devoid of NIC 810.

Since the exposed layer surface 111 of the NIC 810 in the first portion701 that lies beyond the NPC portion 1103 exhibits a relatively lowinitial sticking probability S₀ for the conductive coating 830 comparedto the exposed layer surface 111 of the substrate 110 in the secondportion 702, and/or since the exposed layer surface 111 of the NPC 1120in the NPC portion 1103 exhibits a relatively high initial stickingprobability S₀ for the conductive coating 830 compared to both theexposed layer surface 111 of the NIC 810 in the first portion 701 thatlies beyond the NPC portion 1103 and the exposed layer surface 111 ofthe substrate 110 in the second portion 702, the conductive coating 830is selectively deposited substantially only on the exposed layer surface111 of the substrate 110 in the NPC portion 1103 and the second portion702, both of which are substantially devoid of the NIC 810. By contrast,the evaporated conductive coating material 832 incident on the exposedlayer surface 111 of NIC 810 across the first portion 701 that liesbeyond the NPC portion 1103, tends not to be deposited, as shown (1123)and the exposed layer surface 111 of NIC 810 across the first portion701 that lies beyond the NPC portion 1103 is substantially devoid of theconductive coating 830.

Accordingly, a patterned surface is produced upon completion of thedeposition of the conductive coating 830.

FIGS. 12A-12C illustrate a non-limiting example of an evaporativeprocess, shown generally at 1200, in a chamber 70, for selectivelydepositing a conductive coating 830 onto a second portion 1202 (FIG.12C) of an exposed layer surface 111 of an underlying material.

FIG. 12A describes a stage 1201 of the process 1200, in which, aquantity of an NPC material 1121, is heated under vacuum, to evaporateand/or sublime 1122 the NPC material 1121. In some non-limitingexamples, the NPC material 1121 comprises entirely, and/orsubstantially, a material used to form the NPC 1120. Evaporated NPCmaterial 1122 is directed through the chamber 70, including in adirection indicated by arrow 1210, toward the exposed layer surface 111(in the figure, the substrate 110).

In some non-limiting examples, deposition of the NPC material 1121 maybe performed using an open mask and/or mask-free deposition process,such that the NPC 1120 is formed substantially across the entire exposedlayer surface 111 of the underlying material (in the figure, thesubstrate 110) to produce a treated surface (of the NPC 1120).

In some non-limiting examples, as shown in the figure for the stage1201, the NPC 1120 may be selectively deposited only onto a portion, inthe example illustrated, the NPC portion 1103, of the exposed layersurface 111, by the interposition, between the NPC material 1121 and theexposed layer surface 111, of the shadow mask 1125, which in somenon-limiting examples, may be an FMM. The shadow mask 1125 has at leastone aperture 1126 extending therethrough such that a part of theevaporated NPC material 1122 passes through the aperture 1126 and isincident on the exposed layer surface 111 to form the NPC 1120 in theNPC portion 1103. Where the evaporated NPC material 1122 does not passthrough the aperture 1126 but is incident on the surface 1127 of theshadow mask 1125, it is precluded from being disposed on the exposedlayer surface 111 to form the NPC 1120 within the portion 1102 of theexposed layer surface 111 that lies beyond the NPC portion 1103. Theportion 1102 is thus substantially devoid of the NPC 1120. In somenon-limiting examples (not shown), the NPC material 1121 that isincident on the shadow mask 1125 may be deposited on the surface 1127thereof.

When the evaporated NPC material 1122 is incident on the exposed layersurface 111, that is, in the NPC portion 1103, the NPC 1120 is formedthereon.

Accordingly, a patterned surface is produced upon completion of thedeposition of the NPC 1120.

FIG. 12B describes a stage 1202 of the process 1200, in which, once theNPC 1120 has been deposited on the NPC portion 1103 of an exposed layersurface 111 of an underlying material (in the figure, the substrate110), the NIC 810 may be deposited on a first portion 701 of the exposedlayer surface 111. In the figure, by way of non-limiting example, thefirst portion 701 extends completely within the NPC portion 1103. As aresult, in the figure, by way of non-limiting example, the portion 1102comprises that portion of the exposed layer surface 111 that lies beyondthe first portion 701.

In the stage 1202, a quantity of an NIC material 1211, is heated undervacuum, to evaporate and/or sublime 1212 the NIC material 1211. In somenon-limiting examples, the NIC material 1121 comprises entirely, and/orsubstantially, a material used to form the NIC 810. Evaporated NICmaterial 1212 is directed through the chamber 70, including in adirection indicated by arrow 1220, toward the exposed layer surface 111of the first portion 701, of the NPC portion 1103 that extends beyondthe first portion 701 and of the portion 1102. When the evaporated NICmaterial 1212 is incident on the first portion 701 of the exposed layersurface 111, the NIC 810 is formed thereon.

In some non-limiting examples, deposition of the NIC material 1211 maybe performed using an open mask and/or mask-free deposition process,such that the NIC 810 is formed substantially across the entire exposedlayer surface 111 of the underlying material to produce a treatedsurface (of the NIC 810).

In some non-limiting examples, as shown in the figure for the stage1202, the NIC 810 may be selectively deposited only onto a portion, inthe example illustrated, the first portion 701, of the exposed layersurface 111 (in the figure, of the NPC 1120), by the interposition,between the NIC material 1211 and the exposed layer surface 111, of ashadow mask 1215, which in some non-limiting examples, may be an FMM.The shadow mask 1215 has at least one aperture 1216 extendingtherethrough such that a part of the evaporated NIC material 1212 passesthrough the aperture 1216 and is incident on the exposed layer surface111 (in the figure, by way of non-limiting example, of the NPC 1120) toform the NIC 810. Where the evaporated NIC material 1212 does not passthrough the aperture 1216 but is incident on the surface 1217 of theshadow mask 1215, it is precluded from being disposed on the exposedlayer surface 111 to form the NIC 810 within the second portion 702beyond the first portion 701. The second portion 702 of the exposedlayer surface 111 that lies beyond the first portion 701, is thussubstantially devoid of the NIC 810. In some non-limiting examples (notshown), the evaporated NIC material 1212 that is incident on the shadowmask 1215 may be deposited on the surface 1217 thereof.

While the exposed layer surface 111 of the NPC 1120 in the NPC portion1103 exhibits a relatively high initial sticking probability S₀ for theconductive coating 830, in some non-limiting examples, this may notnecessarily be the case for the NIC coating 810. Even so, in somenon-limiting examples such affinity for the NIC coating 810 may be suchthat the NIC coating 810 is still selectively deposited on the exposedlayer surface 111 (in the figure, of the NPC 1120) in the first portion701.

Accordingly, a patterned surface is produced upon completion of thedeposition of the NIC 810.

FIG. 12C describes a stage 1204 of the process 1200, in which, once theNIC 810 has been deposited on the first portion 701 of an exposed layersurface 111 of an underlying material (in the figure, the NPC 1120), theconductive coating 830 may be deposited on a second portion 702 of theexposed layer surface 111 (in the figure, of the substrate 110 acrossthe portion 1102 beyond the NPC portion 1103 and of the NPC 1120 acrossthe NPC portion 1103 beyond the first portion 701).

In the stage 1204, a quantity of a conductive coating material 831, isheated under vacuum, to evaporate and/or sublime 832 the conductivecoating material 831. In some non-limiting examples, the conductivecoating material 831 comprises entirely, and/or substantially, amaterial used to form the conductive coating 830. Evaporated conductivecoating material 832 is directed through the chamber 70, including in adirection indicated by arrow 1230, toward the exposed layer surface 111of the first portion 701, of the NPC portion 1103 and of the portion1102 beyond the NPC portion 1103. When the evaporated conductive coatingmaterial 832 is incident on the NPC portion 1103 of the exposed layersurface 111 (of the NPC 1120) beyond the first portion 701 and on theportion 1102 beyond the NPC portion 1103 of the exposed layer surface111 (of the substrate 110), that is, on the second portion 702 otherthan on the exposed layer surface 111 of the NIC 810, the conductivecoating 830 is formed thereon.

In some non-limiting examples, as shown in the figure for the stage1204, deposition of the conductive coating 830 may be performed using anopen mask and/or mask-free deposition process, such that the conductivecoating 830 is formed substantially across the entire exposed layersurface 111 of the underlying material (other than where the underlyingmaterial is the NIC 810) to produce a treated surface (of the conductivecoating 830).

Indeed, as shown in FIG. 12C, the evaporated conductive coating material832 is incident both on an exposed layer surface 111 of NIC 810 acrossthe first portion 701 that lies within the NPC portion 1103, as well asthe exposed layer surface 111 of the NPC 1120 across the NPC portion1103 that lies beyond the first portion 701 and the exposed layersurface 111 of the substrate 110 across the portion 1102 that liesbeyond the NPC portion 1103.

Since the exposed layer surface 111 of the NIC 810 in the first portion701 exhibits a relatively low initial sticking probability S₀ for theconductive coating 830 compared to the exposed layer surface 111 of thesubstrate 110 in the second portion 702 that lies beyond the NPC portion1103, and/or since the exposed layer surface 111 of the NPC 1120 in theNPC portion 1103 that lies beyond the first portion 701 exhibits arelatively high initial sticking probability S₀ for the conductivecoating 830 compared to both the exposed layer surface 111 of the NIC810 in the first portion 701 and the exposed layer surface 111 of thesubstrate 110 in the portion 1102 that lies beyond the NPC portion 1103,the conductive coating 830 is selectively deposited substantially onlyon the exposed layer surface 111 of the substrate 110 in the NPC portion1103 that lies beyond the first portion 701 and on the portion 1102 thatlies beyond the NPC portion 1103, both of which are substantially devoidof the NIC 810. By contrast, the evaporated conductive coating material832 incident on the exposed layer surface 111 of NIC 810 across thefirst portion 701, tends not to be deposited, as shown (1233) and theexposed layer surface 111 of NIC 810 across the first portion 701 issubstantially devoid of the conductive coating 830.

Accordingly, a patterned surface is produced upon completion of thedeposition of the conductive coating 830.

In some non-limiting examples, an initial deposition rate of theevaporated conductive coating material 832 on the exposed layer surface111 in the second portion 702 may be at least and/or greater than about200 times, at least and/or greater than about 550 times, at least and/orgreater than about 900 times, at least and/or greater than about 1,000times, at least and/or greater than about 1,500 times, at least and/orgreater than about 1,900 times and/or at least and/or greater than about2,000 times an initial deposition rate of the evaporated conductivecoating material 832 on the exposed layer surface 111 of the NIC 810 inthe first portion 701.

FIGS. 13A-13C illustrate a non-limiting example of a printing process,shown generally at 1300, for selectively depositing a selective coating710, which in some non-limiting examples may be an NIC 810 and/or an NPC1120, onto an exposed layer surface 111 of an underlying material (inthe figure, for purposes of simplicity of illustration only, thesubstrate 110).

FIG. 13A describes a stage of the process 1300, in which a stamp 1310having a protrusion 1311 thereon is provided with the selective coating710 on an exposed layer surface 1312 of the protrusion 1311. Thosehaving ordinary skill in the relevant art will appreciate that theselective coating 710 may be deposited and/or deposited on theprotrusion surface 1312 using a variety of suitable mechanisms.

FIG. 13B describes a stage of the process 1300, in which the stamp 1310is brought into proximity 1301 with the exposed layer surface 111, suchthat the selective coating 710 comes into contact with the exposed layersurface 111 and adheres thereto.

FIG. 13C describes a stage of the process 1300, in which the stamp 1310is moved away 1303 from the exposed layer surface 111, leaving theselective coating 710 deposited on the exposed layer surface 111.

Selective Deposition of a Patterned Electrode

The foregoing may be combined in order to effect the selectivedeposition of at least one conductive coating 830 to form a patternedelectrode 120, 140, 1750, 4150, which may, in some non-limitingexamples, may be the second electrode 140 and/or an auxiliary electrode1750, without employing an FMM within the high-temperature conductivecoating 830 deposition process. In some non-limiting examples, suchpatterning may permit and/or enhance the transmissivity of the device100.

FIG. 14 shows an example patterned electrode 1400 in plan view, in thefigure, the second electrode 140 suitable for use in an example version1500 (FIG. 15 ) of the device 100. The electrode 1400 is formed in apattern 1410 that comprises a single continuous structure, having ordefining a patterned plurality of apertures 1420 therewithin, in whichthe apertures 1420 correspond to regions of the device 100 where thereis no cathode 342.

In the figure, by way of non-limiting example, the pattern 1410 isdisposed across the entire lateral extent of the device 1500, withoutdifferentiation between the lateral aspect(s) 410 of emissive region(s)1910 corresponding to (sub-) pixel(s) 340/264 x and the lateralaspect(s) 420 of non-emissive region(s) 1920 surrounding such emissiveregion(s) 1910. Thus, the example illustrated may correspond to a device1500 that is substantially transmissive relative to light incident on anexternal surface thereof, such that a substantial part of suchexternally-incident light may be transmitted through the device 1500, inaddition to the emission (in a top-emission, bottom-emission and/ordouble-sided emission) of photons generated internally within the device1500 as disclosed herein.

The transmittivity of the device 1500 may be adjusted and/or modified byaltering the pattern 1410 employed, including without limitation, anaverage size of the apertures 1420, and/or a spacing and/or density ofthe apertures 1420.

Turning now to FIG. 15 , there is shown a cross-sectional view of thedevice 1500, taken along line 15-15 in FIG. 14 . In the figure, thedevice 1500 is shown as comprising the substrate 110, the firstelectrode 120 and the at least one semiconducting layer 130. In somenon-limiting examples, an NPC 1120 is disposed on substantially all ofthe exposed layer surface 111 of the at least one semiconducting layer130. In some non-limiting examples, the NPC 1120 could be omitted.

An NIC 810 is selectively disposed in a pattern substantiallycorresponding to the pattern 1410 on the exposed layer surface 111 ofthe underlying material, which, as shown in the figure, is the NPC 1120(but, in some non-limiting examples, could be the at least onesemiconducting layer 130 if the NPC 1120 has been omitted).

A conductive coating 830 suitable for forming the patterned electrode1400, which in the figure is the second electrode 140, is disposed onsubstantially all of the exposed layer surface 111 of the underlyingmaterial, using an open mask and/or a mask-free deposition process,neither of which employs any FMM during the high-temperature conductivecoating deposition process. The underlying material comprises bothregions of the NIC 810, disposed in the pattern 1410, and regions of NPC1120, in the pattern 1410 where the NIC 810 has not been deposited. Insome non-limiting examples, the regions of the NIC 810 may correspondsubstantially to a first portion comprising the apertures 1420 shown inthe pattern 1410.

Because of the nucleation-inhibiting properties of those regions of thepattern 1410 where the NIC 810 was disposed (corresponding to theapertures 1420), the conductive coating 830 disposed on such regionstends not to remain, resulting in a pattern of selective deposition ofthe conductive coating 830, that corresponds substantially to theremainder of the pattern 1410, leaving those regions of the firstportion of the pattern 1410 corresponding to the apertures 1420substantially devoid of the conductive coating 830.

In other words, the conductive coating 830 that will form the cathode342 is selectively deposited substantially only on a second portioncomprising those regions of the NPC 1120 that surround but do not occupythe apertures 1420 in the pattern 1410.

FIG. 16A shows, in plan view, a schematic diagram showing a plurality ofpatterns 1620, 1640 of electrodes 120, 140, 1750.

In some non-limiting examples, the first pattern 1620 comprises aplurality of elongated, spaced-apart regions that extend in a firstlateral direction. In some non-limiting examples, the first pattern 1620may comprise a plurality of first electrodes 120. In some non-limitingexamples, a plurality of the regions that comprise the first pattern1620 may be electrically coupled.

In some non-limiting examples, the second pattern 1640 comprises aplurality of elongated, spaced-apart regions that extend in a secondlateral direction. In some non-limiting examples, the second lateraldirection may be substantially normal to the first lateral direction. Insome non-limiting examples, the second pattern 1640 may comprise aplurality of second electrodes 140. In some non-limiting examples, aplurality of the regions that comprise the second pattern 1640 may beelectrically coupled.

In some non-limiting examples, the first pattern 1620 and the secondpattern 1640 may form part of an example version, shown generally at1600 (FIG. 16C) of the device 100, which may comprise a plurality ofPMOLED elements.

In some non-limiting examples, the lateral aspect(s) 410 of emissiveregion(s) 1910 corresponding to (sub-) pixel(s) 340/264 x are formedwhere the first pattern 1620 overlaps the second pattern 1640. In somenon-limiting examples, the lateral aspect(s) 420 of non-emissive region1920 correspond to any lateral aspect other than the lateral aspect(s)410.

In some non-limiting examples, a first terminal, which, in somenon-limiting examples, may be a positive terminal, of the power source15, is electrically coupled to at least one electrode 120, 140, 1750 ofthe first pattern 1620. In some non-limiting examples, the firstterminal is coupled to the at least one electrode 120, 140, 1750 of thefirst pattern 1620 through at least one driving circuit 300. In somenon-limiting examples, a second terminal, which, in some non-limitingexamples, may be a negative terminal, of the power source 15, iselectrically coupled to at least one electrode 120, 140, 1750 of thesecond pattern 1640. In some non-limiting examples, the second terminalis coupled to the at least one electrode 120, 140, 1750 of the secondpattern 1740 through the at least one driving circuit 300.

Turning now to FIG. 16B, there is shown a cross-sectional view of thedevice 1600, at a deposition stage 1600 b, taken along line 16B-16B inFIG. 16A. In the figure, the device 1600 at the stage 1600 b is shown ascomprising the substrate 110. In some non-limiting examples, an NPC 1120is disposed on the exposed layer surface 111 of the substrate 110. Insome non-limiting examples, the NPC 1120 could be omitted.

An NIC 810 is selectively disposed in a pattern substantiallycorresponding to the inverse of the first pattern 1620 on the exposedlayer surface 111 of the underlying material, which, as shown in thefigure, is the NPC 1120.

A conductive coating 830 suitable for forming the first pattern 1620 ofelectrodes 120, 140, 1750, which in the figure is the first electrode120, is disposed on substantially all of the exposed layer surface 111of the underlying material, using an open mask and/or a mask-freedeposition process, neither of which employs any FMM during thehigh-temperature conductive coating deposition process. The underlyingmaterial comprises both regions of the NIC 810, disposed in the inverseof the first pattern 1620, and regions of NPC 1120, disposed in thefirst pattern 1620 where the NIC 810 has not been deposited. In somenon-limiting examples, the regions of the NPC 1120 may correspondsubstantially to the elongated spaced-apart regions of the first pattern1620, while the regions of the NIC 810 may correspond substantially to afirst portion comprising the gaps therebetween.

Because of the nucleation-inhibiting properties of those regions of thefirst pattern 1620 where the NIC 810 was disposed (corresponding to thegaps therebetween), the conductive coating 830 disposed on such regionstends not to remain, resulting in a pattern of selective deposition ofthe conductive coating 830, that corresponds substantially to elongatedspaced-apart regions of the first pattern 1620, leaving a first portioncomprising the gaps therebetween substantially devoid of the conductivecoating 830.

In other words, the conductive coating 830 that will form the firstpattern 1620 of electrodes 120, 140, 1750 is selectively depositedsubstantially only on a second portion comprising those regions of theNPC 1120 (or in some non-limiting examples, the substrate 110 if the NPC1120 has been omitted), that define the elongated spaced-apart regionsof the first pattern 1620.

Turning now to FIG. 16C, there is shown a cross-sectional view of thedevice 1600, taken along line 16C-16C in FIG. 16A. In the figure, thedevice 1600 is shown as comprising the substrate 110; the first pattern1620 of electrodes 120 deposited as shown in FIG. 16B, and the at leastone semiconducting layer(s) 130.

In some non-limiting examples, the at least one semiconducting layer(s)130 may be provided as a common layer across substantially all of thelateral aspect(s) of the device 1600.

In some non-limiting examples, an NPC 1120 is disposed on substantiallyall of the exposed layer surface 111 of the at least one semiconductinglayer 130. In some non-limiting examples, the NPC 1120 could be omitted.

An NIC 810 is selectively disposed in a pattern substantiallycorresponding to the second pattern 1640 on the exposed layer surface111 of the underlying material, which, as shown in the figure, is theNPC 1120 (but, in some non-limiting examples, could be the at least onesemiconducting layer 130 if the NPC 1120 has been omitted).

A conductive coating 830 suitable for forming the second pattern 1640 ofelectrodes 120, 140, 1750, which in the figure is the second electrode140, is disposed on substantially all of the exposed layer surface 111of the underlying material, using an open mask and/or a mask-freedeposition process, neither of which employs any FMM during thehigh-temperature conductive coating deposition process. The underlyingmaterial comprises both regions of the NIC 810, disposed in the inverseof the second pattern 1640, and regions of NPC 1120, in the secondpattern 1640 where the NIC 810 has not been deposited. In somenon-limiting examples, the regions of the NPC 1120 may correspondsubstantially to a first portion comprising the elongated spaced-apartregions of the second pattern 1640, while the regions of the NIC 810 maycorrespond substantially to the gaps therebetween.

Because of the nucleation-inhibiting properties of those regions of thesecond pattern 1640 where the NIC 810 was disposed (corresponding to thegaps therebetween), the conductive coating 830 disposed on such regionstends not to remain, resulting in a pattern of selective deposition ofthe conductive coating 830, that corresponds substantially to elongatedspaced-apart regions of the second pattern 1640, leaving the firstportion comprising the gaps therebetween substantially devoid of theconductive coating 830.

In other words, the conductive coating 830 that will form the secondpattern 1640 of electrodes 120, 140, 1750 is selectively depositedsubstantially only on a second portion comprising those regions of theNPC 1120 that define the elongated spaced-apart regions of the secondpattern 1640.

In some non-limiting examples, a thickness of the NIC 810 and of theconductive coating 830 deposited thereafter for forming either or bothof the first pattern 1620 and/or the second pattern 1640 of electrodes120, 140, 1750, may be varied according to a variety of parameters,including without limitation, a desired application and desiredperformance characteristics. In some non-limiting examples, thethickness of the NIC 810 may be comparable to and/or substantially lessthan a thickness of conductive coating 830 deposited thereafter. Use ofa relatively thin NIC 810 to achieve selective patterning of aconductive coating deposited thereafter may be suitable to provideflexible devices 1600, including without limitation, PMOLED devices. Insome non-limiting examples, a relatively thin NIC 810 may provide arelatively planar surface on which the barrier coating 1650 or otherthin film encapsulation (TFE) layer, may be deposited. In somenon-limiting examples, providing such a relatively planar surface forapplication of the barrier coating 1650 may increase adhesion of thebarrier coating 1650 to such surface.

At least one of the first pattern 1620 of electrodes 120, 140, 1750 andat least one of the second pattern 1640 of electrodes 120, 140, 1750 maybe electrically coupled to the power source 15, whether directly and/or,in some non-limiting examples, through their respective drivingcircuit(s) 300 to control photon emission from the lateral aspect(s) 410of the emissive region(s) 1910 corresponding to (sub-) pixel(s) 340/264x.

Those having ordinary skill in the relevant art will appreciate that theprocess of forming the second electrode 140 in the second pattern 1640shown in FIGS. 16A-16C may, in some non-limiting examples, be used insimilar fashion to form an auxiliary electrode 1750 for the device 1600.In some non-limiting examples, the second electrode 140 thereof maycomprise a common electrode, and the auxiliary electrode 1750 may bedeposited in the second pattern 1640, in some non-limiting examples,above or in some non-limiting examples below, the second electrode 140and electrically coupled thereto. In some non-limiting examples, thesecond pattern 1640 for such auxiliary electrode 1750 may be such thatthe elongated spaced-apart regions of the second pattern 1640 liesubstantially within the lateral aspect(s) 420 of non-emissive region(s)1920 surrounding the lateral aspect(s) 410 of emissive region(s) 1910corresponding to (sub-) pixel(s) 340/264 x. In some non-limitingexamples, the second pattern 1640 for such auxiliary electrodes 1750 maybe such that the elongated spaced-apart regions of the second pattern1640 lie substantially within the lateral aspect(s) 410 of emissiveregion(s) 1910 corresponding to (sub-) pixel(s) 340/264 x and/or thelateral aspect(s) 420 of non-emissive region(s) 1920 surrounding them.

FIG. 17 shows an example cross-sectional view of an example version 1700of the device 100 that is substantially similar thereto, but furthercomprises at least one auxiliary electrode 1750 disposed in a patternabove and electrically coupled (not shown) with the second electrode140.

The auxiliary electrode 1750 is electrically conductive. In somenon-limiting examples, the auxiliary electrode 1750 may be formed by atleast one metal and/or metal oxide. Non-limiting examples of such metalsinclude Cu, Al, molybdenum (Mo) and/or Ag. By way of non-limitingexamples, the auxiliary electrode 1750 may comprise a multi-layermetallic structure, including without limitation, one formed byMo/AI/Mo. Non-limiting examples of such metal oxides include ITO, ZnO,IZO and/or other oxides containing In and/or Zn. In some non-limitingexamples, the auxiliary electrode 1750 may comprise a multi-layerstructure formed by a combination of at least one metal and at least onemetal oxide, including without limitation, Ag/ITO, Mo/ITO, ITO/Ag/ITOand/or ITO/Mo/ITO. In some non-limiting examples, the auxiliaryelectrode 1750 comprises a plurality of such electrically conductivematerials.

The device 1700 is shown as comprising the substrate 110, the firstelectrode 120 and the at least one semiconducting layer 130.

In some non-limiting examples, an NPC 1120 is disposed on substantiallyall of the exposed layer surface 111 of the at least one semiconductinglayer 130. In some non-limiting examples, the NPC 1120 could be omitted.

The second electrode 140 is disposed on substantially all of the exposedlayer surface 111 of the NPC 1120 (or the at least one semiconductinglayer 130, if the NPC 1120 has been omitted).

In some non-limiting examples, particularly in a top-emission device1700, the second electrode 140 may be formed by depositing a relativelythin conductive film layer (not shown) in order, by way of non-limitingexample, to reduce optical interference (including, without limitation,attenuation, reflections and/or diffusion) related to the presence ofthe second electrode 140. In some non-limiting examples, as discussedelsewhere, a reduced thickness of the second electrode 140, maygenerally increase a sheet resistance of the second electrode 140, whichmay, in some non-limiting examples, reduce the performance and/orefficiency of the device 1700. By providing the auxiliary electrode 1750that is electrically coupled to the second electrode 140, the sheetresistance and thus, the IR drop associated with the second electrode140, may, in some non-limiting examples, be decreased.

In some non-limiting examples, the device 1700 may be a bottom-emissionand/or double-sided emission device 1700. In such examples, the secondelectrode 140 may be formed as a relatively thick conductive layerwithout substantially affecting optical characteristics of such a device1700. Nevertheless, even in such scenarios, the second electrode 140 maynevertheless be formed as a relatively thin conductive film layer (notshown), by way of non-limiting example, so that the device 1700 may besubstantially transmissive relative to light incident on an externalsurface thereof, such that a substantial part such externally-incidentlight may be transmitted through the device 1700, in addition to theemission of photons generated internally within the device 1700 asdisclosed herein.

An NIC 810 is selectively disposed in a pattern on the exposed layersurface 111 of the underlying material, which, as shown in the figure,is the NPC 1120. In some non-limiting examples, as shown in the figure,the NIC 810 may be disposed, in a first portion of the pattern, as aseries of parallel rows 1720.

A conductive coating 830 suitable for forming the patterned auxiliaryelectrode 1750, is disposed on substantially all of the exposed layersurface 111 of the underlying material, using an open mask and/or amask-free deposition process, neither of which employs any FMM duringthe high-temperature conductive coating deposition process. Theunderlying material comprises both regions of the NIC 810, disposed inthe pattern of rows 1720, and regions of NPC 1120 where the NIC 810 hasnot been deposited.

Because of the nucleation-inhibiting properties of those rows 1720 wherethe NIC 810 was disposed, the conductive coating 830 disposed on suchrows 1720 tends not to remain, resulting in a pattern of selectivedeposition of the conductive coating 830, that corresponds substantiallyto at least one second portion of the pattern, leaving the first portioncomprising the rows 1720 substantially devoid of the conductive coating830.

In other words, the conductive coating 830 that will form the auxiliaryelectrode 1750 is selectively deposited substantially only on a secondportion comprising those regions of the NPC 1120, that surround but donot occupy the rows 1720.

In some non-limiting examples, selectively depositing the auxiliaryelectrode 1750 to cover only certain rows 1720 of the lateral aspect ofthe device 1700, while other regions thereof remain uncovered, maycontrol and/or reduce optical interference related to the presence ofthe auxiliary electrode 1750.

In some non-limiting examples, the auxiliary electrode 1750 may beselectively deposited in a pattern that cannot be readily detected bythe naked eye from a typical viewing distance.

In some non-limiting examples, the auxiliary electrode 1750 may beformed in devices other than OLED devices, including for decreasing aneffective resistance of the electrodes of such devices.

Auxiliary Electrode

The ability to pattern electrodes 120, 140, 1750, 4150 including withoutlimitation, the second electrode 140 and/or the auxiliary electrode 1750without employing FMMs during the high-temperature conductive coating830 deposition process by employing a selective coating 710, includingwithout limitation, the process depicted in FIG. 17 , allows numerousconfigurations of auxiliary electrodes 1750 to be deployed.

FIG. 18A shows, in plan view, a part of an example version 1800 of thedevice 100 having a plurality of emissive regions 1910 a-1910 j and atleast one non-emissive region 1820 surrounding them. In somenon-limiting examples, the device 1800 may be an AMOLED device in whicheach of the emissive regions 1910 a-1910 j corresponds to a (sub-) pixel340/264 x thereof.

FIGS. 18B-18D show examples of a part of the device 1800 correspondingto neighbouring emissive regions 1910 a and 1910 b thereof and a part ofthe at least one non-emissive region 1820 therebetween, in conjunctionwith different configurations 1750 b-1750 d of an auxiliary electrode1750 overlaid thereon. In some non-limiting examples, while notexpressly illustrated in FIGS. 18B-18D, the second electrode 140 of thedevice 1800, is understood to substantially cover at least both emissiveregions 1910 a and 1910 b thereof and the part of the at least onenon-emissive region 1820 therebetween.

In FIG. 18B, the auxiliary electrode configuration 1750 b is disposedbetween the two neighbouring emissive regions 1910 a and 1910 b andelectrically coupled to the second electrode 140. In this example, awidth a of the auxiliary electrode configuration 1750 b is less than aseparation distance b between the neighbouring emissive regions 1910 aand 1910 b. As a result, there exists a gap within the at least onenon-emissive region 1820 on each side of the auxiliary electrodeconfiguration 1750 b. In some non-limiting examples, such an arrangementmay reduce a likelihood that the auxiliary electrode configuration 1750b would interfere with an optical output of the device 1800, in somenon-limiting examples, from at least one of the emissive regions 1910 aand 1910 b. In some non-limiting examples, such an arrangement may beappropriate where the auxiliary electrode configuration 1750 b isrelatively thick (in some non-limiting examples, greater than severalhundred nm and/or on the order of a few microns in thickness). In somenon-limiting examples, a ratio of a height (thickness) of the auxiliaryelectrode configuration 1750 b a width thereof (“aspect ratio”) may begreater than about 0.05, such as about 0.1 or greater, about 0.2 orgreater, about 0.5 or greater, about 0.8 or greater, about 1 or greater,and/or about 2 or greater. By way of non-limiting example, a height(thickness) of the auxiliary electrode configuration 1750 b may begreater than about 50 nm, such as about 80 nm or greater, about 100 nmor greater, about 200 nm or greater, about 500 nm or greater, about 700nm or greater, about 1000 nm or greater, about 1500 nm or greater, about1700 nm or greater, or about 2000 nm or greater.

In FIG. 18C, the auxiliary electrode configuration 1750 c is disposedbetween the two neighbouring emissive regions 1910 a and 1910 b andelectrically coupled to the second electrode 140. In this example, thewidth a of the auxiliary electrode configuration 1750 c is substantiallythe same as the separation distance b between the neighbouring emissiveregions 1910 a and 1910 b. As a result, there is no gap within the atleast one non-emissive region 1820 on either side of the auxiliaryelectrode configuration 1750 c. In some non-limiting examples, such anarrangement may be appropriate where the separation distance b betweenthe neighbouring emissive regions 1910 a and 1910 b is relatively small,by way of non-limiting example, in a high pixel density device 1800.

In FIG. 18D, the auxiliary electrode 1750 d is disposed between the twoneighbouring emissive regions 1910 a and 1910 b and electrically coupledto the second electrode 140. In this example, the width a of theauxiliary electrode configuration 1750 d is greater than the separationdistance b between the neighbouring emissive regions 1910 a and 1910 b.As a result, a part of the auxiliary electrode configuration 1750 doverlaps a part of at least one of the neighbouring emissive regions1910 a and/or 1910 b. While the figure shows that the extent of overlapof the auxiliary electrode configuration 1750 d with each of theneighbouring emissive regions 1910 a and 1910 b, in some non-limitingexamples, the extent of overlap and/or in some non-limiting examples, aprofile of overlap between the auxiliary electrode configuration 1750 dand at least one of the neighbouring emissive regions 1910 a and 1910 bmay be varied and/or modulated.

FIG. 19 shows, in plan view, a schematic diagram showing an example of apattern 1950 of the auxiliary electrode 1750 formed as a grid that isoverlaid over both the lateral aspects 410 of emissive regions 1910,which may correspond to (sub-) pixel(s) 340/264 x of an example version1900 of device 100, and the lateral aspects 420 of non-emissive regions1920 surrounding the emissive regions 1910.

In some non-limiting examples, the auxiliary electrode pattern 1950extends substantially only over some but not all of the lateral aspects420 of non-emissive regions 1920, so as not to substantially cover anyof the lateral aspects 410 of the emissive regions 1910.

Those having ordinary skill in the relevant art will appreciate thatwhile, in the figure, the auxiliary electrode pattern 1950 is shown asbeing formed as a continuous structure such that all elements thereofare both physically connected and electrically coupled with one anotherand electrically coupled to at least one electrode 120, 140, 1750, 4150,which in some non-limiting examples may be the first electrode 120and/or the second electrode 140, in some non-limiting examples, theauxiliary electrode pattern 1950 may be provided as a plurality ofdiscrete elements of the auxiliary electrode pattern 1950 that, whileremaining electrically coupled to one another, are not physicallyconnected to one another. Even so, such discrete elements of theauxiliary electrode pattern 1950 may still substantially lower a sheetresistance of the at least one electrode 120, 140, 1750, 4150 with whichthey are electrically coupled, and consequently of the device 1900, soas to increase an efficiency of the device 1900 without substantiallyinterfering with its optical characteristics.

In some non-limiting examples, auxiliary electrodes 1750 may be employedin devices 100 with a variety of arrangements of (sub-) pixel(s) 340/264x. In some non-limiting examples, the (sub-) pixel 340/264 x arrangementmay be substantially diamond-shaped.

By way of non-limiting example, FIG. 20A shows, in plan view, in anexample version 2000 of device 100, a plurality of groups 2041-2043 ofemissive regions 1910 each corresponding to a sub-pixel 264 x,surrounded by the lateral aspects of a plurality of non-emissive regions1920 comprising PDLs 440 in a diamond configuration. In somenon-limiting examples, the configuration is defined by patterns2041-2043 of emissive regions 1910 and PDLs 440 in an alternatingpattern of first and second rows.

In some non-limiting examples, the lateral aspects 420 of thenon-emissive regions 1920 comprising PDLs 440 may be substantiallyelliptically-shaped. In some non-limiting examples, the major axes ofthe lateral aspects 420 of the non-emissive regions 1920 in the firstrow are aligned and substantially normal to the major axes of thelateral aspects 420 of the non-emissive regions 1920 in the second row.In some non-limiting examples, the major axes of the lateral aspects 420of the non-emissive regions 1920 in the first row are substantiallyparallel to an axis of the first row.

In some non-limiting examples, a first group 2041 of emissive regions1910 correspond to sub-pixels 264 x that emit light at a firstwavelength, in some non-limiting examples the sub-pixels 264 x of thefirst group 2041 may correspond to red (R) sub-pixels 2641. In somenon-limiting examples, the lateral aspects 410 of the emissive regions1910 of the first group 2041 may have a substantially diamond-shapedconfiguration. In some non-limiting examples, the emissive regions 1910of the first group 2041 lie in the pattern of the first row, precededand followed by PDLs 440. In some non-limiting examples, the lateralaspects 410 of the emissive regions 1910 of the first group 2041slightly overlap the lateral aspects 420 of the preceding and followingnon-emissive regions 1920 comprising PDLs 440 in the same row, as wellas of the lateral aspects 420 of adjacent non-emissive regions 1920comprising PDLs 440 in a preceding and following pattern of the secondrow.

In some non-limiting examples, a second group 2042 of emissive regions1910 correspond to sub-pixels 264 x that emit light at a secondwavelength, in some non-limiting examples the sub-pixels 264 x of thesecond group 2042 may correspond to green (G) sub-pixels 2642. In somenon-limiting examples, the lateral aspects 410 of the emissive regions1910 of the second group 2041 may have a substantially ellipticalconfiguration. In some non-limiting examples, the emissive regions 1910of the second group 2041 lie in the pattern of the second row, precededand followed by PDLs 440. In some non-limiting examples, the major axisof some of the lateral aspects 410 of the emissive regions 1910 of thesecond group 2041 may be at a first angle, which in some non-limitingexamples, may be 45° relative to an axis of the second row. In somenon-limiting examples, the major axis of others of the lateral aspects410 of the emissive regions 1910 of the second group 2041 may be at asecond angle, which in some non-limiting examples may be substantiallynormal to the first angle. In some non-limiting examples, the emissiveregions 1910 of the first group 2041, whose lateral aspects 410 have amajor axis at the first angle, alternate with the emissive regions 1910of the first group 2041, whose lateral aspects 410 have a major axis atthe second angle.

In some non-limiting examples, a third group 2043 of emissive regions1910 correspond to sub-pixels 264 x that emit light at a thirdwavelength, in some non-limiting examples the sub-pixels 264 x of thethird group 2043 may correspond to blue (B) sub-pixels 2643. In somenon-limiting examples, the lateral aspects 410 of the emissive regions1910 of the third group 2043 may have a substantially diamond-shapedconfiguration. In some non-limiting examples, the emissive regions 1910of the third group 2043 lie in the pattern of the first row, precededand followed by PDLs 440. In some non-limiting examples, the lateralaspects 410 of the emissive regions 1910 of the third group 2043slightly overlap the lateral aspects 410 of the preceding and followingnon-emissive regions 1920 comprising PDLs 440 in the same row, as wellas of the lateral aspects 420 of adjacent non-emissive regions 1920comprising PDLs 440 in a preceding and following pattern of the secondrow. In some non-limiting examples, the pattern of the second rowcomprises emissive regions 1910 of the first group 2041 alternatingemissive regions 1910 of the third group 2043, each preceded andfollowed by PDLs 440.

Turning now to FIG. 20B, there is shown an example cross-sectional viewof the device 2000, taken along line 20B-20B in FIG. 20A. In the figure,the device 2000 is shown as comprising a substrate 110 and a pluralityof elements of a first electrode 120, formed on an exposed layer surface111 thereof. The substrate 110 may comprise the base substrate 112 (notshown for purposes of simplicity of illustration) and/or at least oneTFT structure 200, corresponding to and for driving each sub-pixel 264x. PDLs 440 are formed over the substrate 110 between elements of thefirst electrode 120, to define emissive region(s) 1910 over each elementof the first electrode 120, separated by non-emissive region(s) 1920comprising the PDL(s) 440. In the figure, the emissive region(s) 1910all correspond to the second group 2042.

In some non-limiting examples, at least one semiconducting layer 130 isdeposited on each element of the first electrode 120, between thesurrounding PDLs 440.

In some non-limiting examples, a second electrode 140, which in somenon-limiting examples, may be a common cathode, may be deposited overthe emissive region(s) 1910 of the second group 2042 to form the G(reen)sub-pixel(s) 2642 thereof and over the surrounding PDLs 440.

In some non-limiting examples, an NIC 810 is selectively deposited overthe second electrode 140 across the lateral aspects 410 of the emissiveregion(s) 1910 of the second group 2042 of G(reen) sub-pixels 2642 toallow selective deposition of a conductive coating 830 over parts of thesecond electrode 140 that is substantially devoid of the NIC 810, namelyacross the lateral aspects 420 of the non-emissive region(s) 1920comprising the PDLs 440. In some non-limiting examples, the conductivecoating 830 may tend to accumulate along the substantially planar partsof the PDLs 440, as the conductive coating 830 may not tend to remain onthe inclined parts of the PDLs 440, but tends to descend to a base ofsuch inclined parts, which are coated with the NIC 810. In somenon-limiting examples, the conductive coating 830 on the substantiallyplanar parts of the PDLs 440 may form at least one auxiliary electrode1750 that may be electrically coupled to the second electrode 140.

In some non-limiting examples, the device 2000 may comprise a CPL 3610and/or an outcoupling layer. By way of non-limiting example, such CPL3610 and/or outcoupling layer may be provided directly on a surface ofthe second electrode 140 and/or a surface of the NIC 810. In somenon-limiting examples, such CPL 3610 and/or outcoupling layer may beprovided across the lateral aspect 410 of at least one emissive region1910 corresponding to a (sub-) pixel 340/264 x.

In some non-limiting examples, the NIC 810 may also act as anindex-matching coating. In some non-limiting examples, the NIC 810 mayalso act as an outcoupling layer.

In some non-limiting examples, the device 2000 comprises anencapsulation layer. Non-limiting examples of such encapsulation layerinclude a glass cap, a barrier film, a barrier adhesive and/or a TFElayer 2050 such as shown in dashed outline in the figure, provided toencapsulate the device 2000. In some non-limiting examples, the TFElayer 2050 may be considered a type of barrier coating 1650.

In some non-limiting examples, the encapsulation layer may be arrangedabove at least one of the second electrode 140 and/or the NIC 810. Insome non-limiting example, the device 2000 comprises additional opticaland/or structural layers, coatings and components, including withoutlimitation, a polarizer, a color filter, an anti-reflection coating, ananti-glare coating, cover class and/or an optically-clear adhesive(OCA).

Turning now to FIG. 20C, there is shown an example cross-sectional viewof the device 2000, taken along line 20C-20C in FIG. 20A. In the figure,the device 2000 is shown as comprising a substrate 110 and a pluralityof elements of a first electrode 120, formed on an exposed layer surface111 thereof. PDLs 440 are formed over the substrate 110 between elementsof the first electrode 120, to define emissive region(s) 1910 over eachelement of the first electrode 120, separated by non-emissive region(s)1920 comprising the PDL(s) 440. In the figure, the emissive region(s)1910 correspond to the first group 2041 and to the third group 2043 inalternating fashion.

In some non-limiting examples, at least one semiconducting layer 130 isdeposited on each element of the first electrode 120, between thesurrounding PDLs 440.

In some non-limiting examples, a second electrode 140, which in somenon-limiting examples, may be a common cathode, may be deposited overthe emissive region(s) 1910 of the first group 2041 to form the R(ed)sub-pixel(s) 2641 thereof, over the emissive region(s) 1910 of the thirdgroup 2043 to form the B(lue) sub-pixel(s) 2643 thereof, and over thesurrounding PDLs 440.

In some non-limiting examples, an NIC 810 is selectively deposited overthe second electrode 140 across the lateral aspects 410 of the emissiveregion(s) 1910 of the first group 2041 of R(ed) sub-pixels 2641 and ofthe third group of B(lue) sub-pixels 2643 to allow selective depositionof a conductive coating 830 over parts of the second electrode 140 thatis substantially devoid of the NIC 810, namely across the lateralaspects 420 of the non-emissive region(s) 1920 comprising the PDLs 440.In some non-limiting examples, the conductive coating 830 may tend toaccumulate along the substantially planar parts of the PDLs 440, as theconductive coating 830 may not tend to remain on the inclined parts ofthe PDLs 440, but tends to descend to a base of such inclined parts,which are coated with the NIC 810. In some non-limiting examples, theconductive coating 830 on the substantially planar parts of the PDLs 440may form at least one auxiliary electrode 1750 that may be electricallycoupled to the second electrode 140.

Turning now to FIG. 21 , there is shown an example version 2100 of thedevice 100, which encompasses the device 100 shown in cross-sectionalview in FIG. 4 , but with a number of additional deposition steps thatare described herein.

The device 2100 shows an NIC 810 selectively deposited over the exposedlayer surface 111 of the underlying material, in the figure, the secondelectrode 140, within a first portion of the device 2100, correspondingsubstantially to the lateral aspect 410 of emissive region(s) 1910corresponding to (sub-) pixel(s) 340/264 x and not within a secondportion of the device 2100, corresponding substantially to the lateralaspect(s) 420 of non-emissive region(s) 1920 surrounding the firstportion.

In some non-limiting examples, the NIC 810 may be selectively depositedusing a shadow mask.

The NIC 810 provides, within the first portion, a surface with arelatively low initial sticking probability S₀ for a conductive coating830 to be thereafter deposited on to form an auxiliary electrode 1750.

After selective deposition of the NIC 810, the conductive coating 830 isdeposited over the device 2100 but remains substantially only within thesecond portion, which is substantially devoid of NIC 810, to form theauxiliary electrode 1750.

In some non-limiting examples, the conductive coating 830 may bedeposited using an open mask and/or a mask-free deposition process.

The auxiliary electrode 1750 is electrically coupled to the secondelectrode 140 so as to reduce a sheet resistance of the second electrode140, including, as shown, by lying above and in physical contact withthe second electrode 140 across the second portion that is substantiallydevoid of NIC 810.

In some non-limiting examples, the conductive coating 830 may comprisesubstantially the same material as the second electrode 140, to ensure ahigh initial sticking probability S₀ for the conductive coating 830 inthe second portion.

In some non-limiting examples, the second electrode 140 may comprisesubstantially pure Mg and/or an alloy of Mg and another metal, includingwithout limitation, Ag. In some non-limiting examples, an Mg:Ag alloycomposition may range from about 1:9 to about 9:1 by volume. In somenon-limiting examples, the second electrode 140 may comprise metaloxides, including without limitation, ternary metal oxides, such as,without limitation, ITO and/or IZO, and/or a combination of metalsand/or metal oxides.

In some non-limiting examples, the conductive coating 830 used to formthe auxiliary electrode 1750 may comprise substantially pure Mg.

Turning now to FIG. 22 , there is shown an example version 2200 of thedevice 100, which encompasses the device 100 shown in cross-sectionalview in FIG. 4 , but with a number of additional deposition steps thatare described herein.

The device 2200 shows an NIC 810 selectively deposited over the exposedlayer surface 111 of the underlying material, in the figure, the secondelectrode 140, within a first portion of the device 2200, correspondingsubstantially to a part of the lateral aspect 410 of emissive region(s)1910 corresponding to (sub-) pixel(s) 340/264 x, and not within a secondportion. In the figure, the first portion extends partially along theextent of an inclined part of the PDLs 440 defining the emissiveregion(s) 1910.

In some non-limiting examples, the NIC 810 may be selectively depositedusing a shadow mask.

The NIC 810 provides, within the first portion, a surface with arelatively low initial sticking probability S₀ for a conductive coating830 to be thereafter deposited on form an auxiliary electrode 1750.

After selective deposition of the NIC 810, the conductive coating 830 isdeposited over the device 2200 but remains substantially only within thesecond portion, which is substantially devoid of NIC 810, to form theauxiliary electrode 1750. As such, in the device 2200, the auxiliaryelectrode 1750 extends partly across the inclined part of the PDLs 440defining the emissive region(s) 1910.

In some non-limiting examples, the conductive coating 830 may bedeposited using an open mask and/or a mask-free deposition process.

The auxiliary electrode 1750 is electrically coupled to the secondelectrode 140 so as to reduce a sheet resistance of the second electrode140, including, as shown, by lying above and in physical contact withthe second electrode 140 across the second portion that is substantiallydevoid of NIC 810.

In some non-limiting examples, the material of which the secondelectrode 140 may be comprised, may not have a high initial stickingprobability S₀ for the conductive coating 830.

FIG. 23 illustrates such a scenario, in which there is shown an exampleversion 2300 of the device 100, which encompasses the device 100 shownin cross-sectional view in FIG. 4 , but with a number of additionaldeposition steps that are described herein.

The device 2300 shows an NPC 1120 deposited over the exposed layersurface 111 of the underlying material, in the figure, the secondelectrode 140.

In some non-limiting examples, the NPC 1120 may be deposited using anopen mask and/or a mask-free deposition process.

Thereafter, an NIC 810 is deposited selectively deposited over theexposed layer surface 111 of the underlying material, in the figure, theNPC 1120, within a first portion of the device 2300, correspondingsubstantially to a part of the lateral aspect 410 of emissive region(s)1910 corresponding to (sub-) pixel(s) 340/264 x, and not within a secondportion of the device 2300, corresponding substantially to the lateralaspect(s) 420 of non-emissive region(s) 1920 surrounding the firstportion.

In some non-limiting examples, the NIC 810 may be selectively depositedusing a shadow mask.

The NIC 810 provides, within the first portion, a surface with arelatively low initial sticking probability S₀ for a conductive coating830 to be thereafter deposited on form an auxiliary electrode 1750.

After selective deposition of the NIC 810, the conductive coating 830 isdeposited over the device 2300 but remains substantially only within thesecond portion, which is substantially devoid of NIC 810, to form theauxiliary electrode 1750.

In some non-limiting examples, the conductive coating 830 may bedeposited using an open mask and/or a mask-free deposition process.

The auxiliary electrode 1750 is electrically coupled to the secondelectrode 140 so as to reduce a sheet resistance thereof. While, asshown, the auxiliary electrode 1750 is not lying above and in physicalcontact with the second electrode 140, those having ordinary skill inthe relevant art will nevertheless appreciate that the auxiliaryelectrode 1750 may be electrically coupled to the second electrode 140by a number of well-understood mechanisms. By way of non-limitingexample, the presence of a relatively thin film (in some non-limitingexamples, of up to about 50 nm) of an NIC 810 and/or an NPC 1120 maystill allow a current to pass therethrough, thus allowing a sheetresistance of the second electrode 140 to be reduced.

Turning now to FIG. 24 , there is shown an example version 2400 of thedevice 100, which encompasses the device 100 shown in cross-sectionalview in FIG. 4 , but with a number of additional deposition steps thatare described herein.

The device 2400 shows an NIC 810 deposited over the exposed layersurface 111 of the underlying material, in the figure, the secondelectrode 140.

In some non-limiting examples, the NIC 810 may be deposited using anopen mask and/or a mask-free deposition process.

The NIC 810 provides a surface with a relatively low initial stickingprobability S₀ for a conductive coating 830 to be thereafter depositedon form an auxiliary electrode 1750.

After deposition of the NIC 810, an NPC 1120 is selectively depositedover the exposed layer surface 111 of the underlying material, in thefigure, the NIC 810, within a NPC portion of the device 2400,corresponding substantially to a part of the lateral aspect 420 ofnon-emissive region(s) 1920 surrounding a second portion of the device2400, corresponding substantially to the lateral aspect(s) 410 ofemissive region(s) 1910 corresponding to (sub-) pixel(s) 340/264 x.

In some non-limiting examples, the NPC 1120 may be selectively depositedusing a shadow mask.

The NPC 1120 provides, within the first portion, a surface with arelatively high initial sticking probability S₀ for a conductive coating830 to be thereafter deposited on form an auxiliary electrode 1750.

After selective deposition of the NPC 1120, the conductive coating 830is deposited over the device 2400 but remains substantially only withinthe NPC portion, in which the NIC 810 has been overlaid with the NPC1120, to form the auxiliary electrode 1750.

In some non-limiting examples, the conductive coating 830 may bedeposited using an open mask and/or a mask-free deposition process.

The auxiliary electrode 1750 is electrically coupled to the secondelectrode 140 so as to reduce a sheet resistance of the second electrode140.

Removal of Selective Coatings

In some non-limiting examples, the NIC 810 may be removed subsequent todeposition of the conductive coating 830, such that at least a part of apreviously exposed layer surface 111 of an underlying material coveredby the NIC 810 may become exposed once again. In some non-limitingexamples, the NIC 810 may be selectively removed by etching and/ordissolving the NIC 810 and/or by employing plasma and/or solventprocessing techniques that do not substantially affect or erode theconductive coating 830.

Turning now to FIG. 25A, there is shown an example cross-sectional viewof an example version 2500 of the device 100, at a deposition stage 2500a, in which an NIC 810 has been selectively deposited on a first portionof an exposed layer surface 111 of an underlying material. In thefigure, the underlying material may be the substrate 110.

In FIG. 25B, the device 2500 is shown at a deposition stage 2500 b, inwhich a conductive coating 830 is deposited on the exposed layer surface111 of the underlying material, that is, on both the exposed layersurface 111 of NIC 810 where the NIC 810 has been deposited during thestage 2500 a, as well as the exposed layer surface 111 of the substrate110 where that NIC 810 has not been deposited during the stage 2500 a.Because of the nucleation-inhibiting properties of the first portionwhere the NIC 810 was disposed, the conductive coating 830 disposedthereon tends not to remain, resulting in a pattern of selectivedeposition of the conductive coating 830, that corresponds to a secondportion, leaving the first portion substantially devoid of theconductive coating.

In FIG. 25C, the device 2500 is shown at a deposition stage 2500 c, inwhich the NIC 810 has been removed from the first portion of the exposedlayer surface 111 of the substrate 110, such that the conductive coating830 deposited during the stage 2500 b remains on the substrate 110 andregions of the substrate 110 on which the NIC 810 had been depositedduring the stage 2500 a are now exposed or uncovered.

In some non-limiting examples, the removal of the NIC 810 in the stage2500 c may be effected by exposing the device 2500 to a solvent and/or aplasma that reacts with and/or etches away the NIC 810 withoutsubstantially impacting the conductive coating 830.

Transparent OLED

Turning now to FIG. 26A, there is shown an example plan view of atransmissive (transparent) version, shown generally at 2600, of thedevice 100. In some non-limiting examples, the device 2600 is an AMOLEDdevice having a plurality of pixel regions 2610 and a plurality oftransmissive regions 2620. In some non-limiting examples, at least oneauxiliary electrode 1750 may be deposited on an exposed layer surface111 of an underlying material between the pixel region(s) 2610 and/orthe transmissive region(s) 2620.

In some non-limiting examples, each pixel region 2610 may comprise aplurality of emissive regions 1910 each corresponding to a sub-pixel 264x. In some non-limiting examples, the sub-pixels 264 x may correspondto, respectively, R(ed) sub-pixels 2641, G(reen) sub-pixels 2642 and/orB(lue) sub-pixels 2643.

In some non-limiting examples, each transmissive region 2620 issubstantially transparent and allows light to pass through the entiretyof a cross-sectional aspect thereof.

Turning now to FIG. 26B, there is shown an example cross-sectional viewof the device 2600, taken along line 26B-26B in FIG. 26A. In the figure,the device 2600 is shown as comprising a substrate 110, a TFT insulatinglayer 280 and a first electrode 120 formed on a surface of the TFTinsulating layer 280. The substrate 110 may comprise the base substrate112 (not shown for purposes of simplicity of illustration) and/or atleast one one TFT structure 200, corresponding to and for driving eachsub-pixel 264 x positioned substantially thereunder and electricallycoupled to the first electrode 120 thereof. PDL(s) 440 are formed innon-emissive regions 1920 over the substrate 110, to define emissiveregion(s) 1910 also corresponding to each sub-pixel 264 x, over thefirst electrode 120 corresponding thereto. The PDL(s) 440 cover edges ofthe first electrode 120.

In some non-limiting examples, at least one semiconducting layer 130 isdeposited over exposed region(s) of the first electrode 120 and, in somenon-limiting examples, at least parts of the surrounding PDLs 440.

In some non-limiting examples, a second electrode 140 may be depositedover the at least one semiconducting layer(s) 130, including over thepixel region 2610 to form the sub-pixel(s) 264 x thereof and, in somenon-limiting examples, at least partially over the surrounding PDLs 440in the transmissive region 2620.

In some non-limiting examples, an NIC 810 is selectively deposited overfirst portion(s) of the device 2600, comprising both the pixel region2610 and the transmissive region 2620 but not the region of the secondelectrode 140 corresponding to the auxiliary electrode 1750.

In some non-limiting examples, the entire surface of the device 2600 isthen exposed to a vapor flux of the conductive coating 830, which insome non-limiting examples may be Mg. The conductive coating 830 isselectively deposited over second portion(s) of the second electrode 140that is substantially devoid of the NIC 810 to form an auxiliaryelectrode 1750 that is electrically coupled to and in some non-limitingexamples, in physical contact with uncoated parts of the secondelectrode 140.

At the same time, the transmissive region 2620 of the device 2600remains substantially devoid of any materials that may substantiallyaffect the transmission of light therethrough. In particular, as shownin the figure, the TFT structure 200 and the first electrode 120 arepositioned, in a cross-sectional aspect, below the sub-pixel 264 xcorresponding thereto, and together with the auxiliary electrode 1750,lie beyond the transmissive region 2620. As a result, these componentsdo not attenuate or impede light from being transmitted through thetransmissive region 2620. In some non-limiting examples, sucharrangement allows a viewer viewing the device 2600 from a typicalviewing distance to see through the device 2600, in some non-limitingexamples, when all of the (sub-) pixel(s) 340/264 x are not emitting,thus creating a transparent AMOLED device 2600.

While not shown in the figure, in some non-limiting examples, the device2600 may further comprise an NPC 1120 disposed between the auxiliaryelectrode 1750 and the second electrode 140. In some non-limitingexamples, the NPC 1120 may also be disposed between the NIC 810 and thesecond electrode 140.

In some non-limiting examples, the NIC 810 may be formed concurrentlywith the at least one semiconducting layer(s) 130. By way ofnon-limiting example, at least one material used to form the NIC 810 mayalso be used to form the at least one semiconducting layer(s) 130. Insuch non-limiting example, a number of stages for fabricating the device2600 may be reduced.

Those having ordinary skill in the relevant art will appreciate that insome non-limiting examples, various other layers and/or coatings,including without limitation those forming the at least onesemiconducting layer(s) 130 and/or the second electrode 140, may cover apart of the transmissive region 2620, especially if such layers and/orcoatings are substantially transparent. In some non-limiting examples,the PDL(s) 440 may have a reduced thickness, including withoutlimitation, by forming a well therein, which in some non-limitingexamples is not dissimilar to the well defined for emissive region(s)1910, to further facilitate light transmission through the transmissiveregion 2620.

Those having ordinary skill in the relevant art will appreciate that(sub-) pixel(s) 340/264 x arrangements other than the arrangement shownin FIGS. 26A and 26B may, in some non-limiting examples, be employed.

Those having ordinary skill in the relevant art will appreciate thatarrangements of the auxiliary electrode(s) 1750 other than thearrangement shown in FIGS. 26A and 26B may, in some non-limitingexamples, be employed. By way of non-limiting example, the auxiliaryelectrode(s) 1750 may be disposed between the pixel region 2610 and thetransmissive region 2620. By way of non-limiting example, the auxiliaryelectrode(s) 1750 may be disposed between sub-pixel(s) 264 x within apixel region 2610.

Turning now to FIG. 27A, there is shown an example plan view of atransparent version, shown generally at 2700 of the device 100. In somenon-limiting examples, the device 2700 is an AMOLED device having aplurality of pixel regions 2610 and a plurality of transmissive regions2620. The device 2700 differs from device 2600 in that no auxiliaryelectrode(s) 1750 lie between the pixel region(s) 2610 and/or thetransmissive region(s) 2620.

In some non-limiting examples, each pixel region 2610 may comprise aplurality of emissive regions 1910 each corresponding to a sub-pixel 264x. In some non-limiting examples, the sub-pixels 264 x may correspondto, respectively, R(ed) sub-pixels 2641, G(reen) sub-pixels 2642 and/orB(lue) sub-pixels 2643.

In some non-limiting examples, each transmissive region 2620 issubstantially transparent and allows light to pass through the entiretyof a cross-sectional aspect thereof.

Turning now to FIG. 27B, there is shown an example cross-sectional viewof the device 2700, taken along line 27B-27B in FIG. 27A. In the figure,the device 2700 is shown as comprising a substrate 110, a TFT insulatinglayer 280 and a first electrode 120 formed on a surface of the TFTinsulating layer 280. The substrate 110 may comprise the base substrate112 (not shown for purposes of simplicity of illustration) and/or atleast one TFT structure 200 corresponding to and for driving eachsub-pixel 264 x positioned substantially thereunder and electricallycoupled to the first electrode 120 thereof. PDL(s) 440 are formed innon-emissive regions 1920 over the substrate 110, to define emissiveregion(s) 1910 also corresponding to each sub-pixel 264 x, over thefirst electrode 120 corresponding thereto. The PDL(s) 440 cover edges ofthe first electrode 120.

In some non-limiting examples, at least one semiconducting layer 130 isdeposited over exposed region(s) of the first electrode 120 and, in somenon-limiting examples, at least parts of the surrounding PDLs 440.

In some non-limiting examples, an initial conductive coating 830 ₀ maybe deposited over the at least one semiconducting layer(s) 130,including over the pixel region 2610 to form the sub-pixel(s) 264 xthereof and over the surrounding PDLs 440 in the transmissive region2620. In some non-limiting examples, the thickness of the initialconductive coating 830 ₀ may be relatively thin such that the presenceof the initial conductive coating 830 ₀ across the transmissive region2620 does not substantially attenuate transmission of lighttherethrough. In some non-limiting examples, the initial conductivecoating 830 ₀ may be deposited using an open mask and/or mask-freedeposition process.

In some non-limiting examples, an NIC 810 is selectively deposited overfirst portions of the device 2700, comprising the transmissive region2620.

In some non-limiting examples, the entire surface of the device 2700 isthen exposed to a vapor flux of the conductive coating material 831,which in some non-limiting examples may be Mg, to selectively deposit afirst conductive coating 830 a over second portion(s) of the initialconductive coating 830 ₀ that are substantially devoid of the NIC 810,in some examples, the pixel region 2610, such that the first conductivecoating 830 a is electrically coupled to and in some non-limitingexamples, in physical contact with uncoated parts of the initialconductive coating 830 ₀, to form the second electrode 140.

In some non-limiting examples, a thickness of the initial conductivecoating 830 ₀ may be less than a thickness of the first conductivecoating 830 a. In this way, relatively high transmittance may bemaintained in the transmissive region 2620, over which only the initialconductive coating 830 ₀ extends. In some non-limiting examples, thethickness of the initial conductive coating 830 ₀ may be less than about30 nm, less than about 25 nm, less than about 20 nm, less than about 15nm, less than about 10 nm, less than about 8 nm, and/or less than about5 nm. In some non-limiting examples, the thickness of the firstconductive coating 830 a may be less than about 30 nm, less than about25 nm, less than about 20 nm, less than about 15 nm, less than about 10nm and/or less than about 8 nm.

Thus, in some non-limiting examples, a thickness of the second electrode140 may be less than about 40 nm, and/or in some non-limiting examples,between about 5 nm and 30 nm, between about 10 nm and about 25 nm and/orbetween about 15 nm and about 25 nm.

In some non-limiting examples, the thickness of the initial conductivecoating 830 ₀ may be greater than the thickness of the first conductivecoating 830 a. In some non-limiting examples, the thickness of theinitial conductive coating 830 ₀ and the thickness of the firstconductive coating 830 a may be substantially the same.

In some non-limiting examples, at least one material used to form theinitial conductive coating 830 ₀ may be substantially the same as atleast one material used to form the first conductive coating 830 a. Insome non-limiting examples, such at least one material may besubstantially as described herein in respect of the first electrode 120,the second electrode 140, the auxiliary electrode 1750 and/or aconductive coating 830 thereof.

In some non-limiting examples, the transmissive region 2620 of thedevice 2700 remains substantially devoid of any materials that maysubstantially affect the transmission of light therethrough. Inparticular, as shown in the figure, the TFT structure 200 and/or thefirst electrode 120 are positioned, in a cross-sectional aspect belowthe sub-pixel 264 x corresponding thereto and beyond the transmissiveregion 2620. As a result, these components do not attenuate or impedelight from being transmitted through the transmissive region 2620. Insome non-limiting examples, such arrangement allows a viewer viewing thedevice 2700 from a typical viewing distance to see through the device2700, in some non-limiting examples, when all of the (sub-) pixel(s)340/264 x are not emitting, thus creating a transparent AMOLED device2700.

While not shown in the figure, in some non-limiting examples, the device2700 may further comprise an NPC 1120 disposed between the firstconductive coating 830 a and the initial conductive coating 830 ₀. Insome non-limiting examples, the NPC 1120 may also be disposed betweenthe NIC 810 and the initial conductive coating 830 ₀.

In some non-limiting examples, the NIC 810 may be formed concurrentlywith the at least one semiconducting layer(s) 130. By way ofnon-limiting example, at least one material used to form the NIC 810 mayalso be used to form the at least one semiconducting layer(s) 130. Insuch non-limiting example, a number of stages for fabricating the device2700 may be reduced.

Those having ordinary skill in the relevant art will appreciate that insome non-limiting examples, various other layers and/or coatings,including without limitation those forming the at least onesemiconducting layer(s) 130 and/or the initial conductive coating 830 ₀,may cover a part of the transmissive region 2620, especially if suchlayers and/or coatings are substantially transparent. In somenon-limiting examples, the PDL(s) 440 may have a reduced thickness,including without limitation, by forming a well therein, which in somenon-limiting examples is not dissimilar to the well defined for emissiveregion(s) 1910, to further facilitate light transmission through thetransmissive region 2620.

Those having ordinary skill in the relevant art will appreciate that(sub-) pixel(s) 340/264 x arrangements other than the arrangement shownin FIGS. 27A and 27B may, in some non-limiting examples, be employed.

Turning now to FIG. 27C, there is shown an example cross-sectional viewof a different version of the device 100, shown as device 2710, takenalong the same line 27B-27B in FIG. 27A. In the figure, the device 2710is shown as comprising a substrate 110, a TFT insulating layer 280 and afirst electrode 120 formed on a surface of the TFT insulating layer 280.The substrate 110 may comprise the base substrate 112 (not shown forpurposes of simplicity of illustration) and/or at least one TFTstructure 200 corresponding to and for driving each sub-pixel 264 xpositioned substantially thereunder and electrically coupled to thefirst electrode 120 thereof. PDL(s) 440 are formed in non-emissiveregions 1920 over the substrate 110, to define emissive region(s) 1910also corresponding to each sub-pixel 264 x, over the first electrode 120corresponding thereto. The PDL(s) 440 cover edges of the first electrode120.

In some non-limiting examples, at least one semiconducting layer 130 isdeposited over exposed region(s) of the first electrode 120 and, in somenon-limiting examples, at least parts of the surrounding PDLs 440.

In some non-limiting examples, an NIC 810 is selectively deposited overfirst portions of the device 2710, comprising the transmissive region2620.

In some non-limiting examples, a conductive coating 830 may be depositedover the at least one semiconducting layer(s) 130, including over thepixel region 2610 to form the sub-pixel(s) 264 x thereof but not overthe surrounding PDLs 440 in the transmissive region 2620. In somenon-limiting examples, the conductive coating 830 may be deposited usingan open mask and/or mask-free deposition process. In some non-limitingexamples, such deposition may be effected by exposing the entire surfaceof the device 2710 to a vapour flux of the conductive coating material831, which in some non-limiting examples may be Mg to selectivelydeposit the conductive coating 830 over second portions of the at leastone semiconducting layer(s) 130 that are substantially devoid of the NIC810, in some examples, the pixel region 2610, such that the conductivecoating 830 is deposited on the at least one semiconducting layer(s) 130to form the second electrode 140.

In some non-limiting examples, the transmissive region 2620 of thedevice 2710 remains substantially devoid of any materials that maysubstantially affect the transmission of light therethrough. Inparticular, as shown in the figure, the TFT structure 200 and/or thefirst electrode 120 are positioned, in a cross-sectional aspect belowthe sub-pixel 264 x corresponding thereto and beyond the transmissiveregion 2620. As a result, these components do not attenuate or impedelight from being transmitted through the transmissive region 2620. Insome non-limiting examples, such arrangement allows a viewer viewing thedevice 2710 from a typical viewing distance to see through the device2700, in some non-limiting examples, when all of the (sub-) pixel(s)340/264 x are not emitting, thus creating a transparent AMOLED device2710.

By providing a transmissive region 2620 that is free and/orsubstantially devoid of any conductive coating 830, the transmittance insuch region may, in some non-limiting examples, be favorably enhanced,by way of non-limiting example, by comparison to the device 2700 of FIG.27B.

While not shown in the figure, in some non-limiting examples, the device2710 may further comprise an NPC 1120 disposed between the conductivecoating 830 and the at least one semiconducting layer(s) 130. In somenon-limiting examples, the NPC 1120 may also be disposed between the NIC810 and the PDL(s) 440.

In some non-limiting examples, the NIC 810 may be formed concurrentlywith the at least one semiconducting layer(s) 130. By way ofnon-limiting example, at least one material used to form the NIC 810 mayalso be used to form the at least one semiconducting layer(s) 130. Insuch non-limiting example, a number of stages for fabricating the device2710 may be reduced.

Those having ordinary skill in the relevant art will appreciate that insome non-limiting examples, various other layers and/or coatings,including without limitation those forming the at least onesemiconducting layer(s) 130 and/or the conductive coating 830, may covera part of the transmissive region 2620, especially if such layers and/orcoatings are substantially transparent. In some non-limiting examples,the PDL(s) 440 may have a reduced thickness, including withoutlimitation, by forming a well therein, which in some non-limitingexamples is not dissimilar to the well defined for emissive region(s)1910, to further facilitate light transmission through the transmissiveregion 2620.

Those having ordinary skill in the relevant art will appreciate that(sub-) pixel(s) 340/264 x arrangements other than the arrangement shownin FIGS. 27A and 27C may, in some non-limiting examples, be employed.

Selective Deposition of a Conductive Coating over Emissive Region(s)

As discussed above, modulating the thickness of an electrode 120, 140,1750, 4150 in and across a lateral aspect 410 of emissive region(s) 1910of a (sub-) pixel 340/264 x may impact the microcavity effectobservable. In some non-limiting examples, selective deposition of atleast one conductive coating 830 through deposition of at least oneselective coating 710, such as an NIC 810 and/or an NPC 1120, in thelateral aspects 410 of emissive region(s) 1910 corresponding todifferent sub-pixel(s) 264 x in a pixel region 2610 may allow theoptical microcavity effect in each emissive region 1910 to be controlledand/or modulated to optimize desirable optical microcavity effects on asub-pixel 264 x basis, including without limitation, an emissionspectrum, a luminous intensity and/or an angular dependence of abrightness and/or a color shift of emitted light.

Such effects may be controlled by modulating the thickness of theselective coating 710, such as an NIC 810 and/or an NPC 1120, disposedin each emissive region 1910 of the sub-pixel(s) 264 x independently ofone another. By way of non-limiting example, the thickness of an NIC 810disposed over a blue sub-pixel 2643 may be less than the thickness of anNIC 810 disposed over a green sub-pixel 2642, and the thickness of theNIC disposed over a green sub-pixel 2642 may be less than the thicknessof an NIC 810 disposed over a red sub-pixel 2641.

In some non-limiting examples, such effects may be controlled to an evengreater extent by independently modulating the thickness of not only theselective coating 710, but also the conductive coating 830 deposited inpart(s) of each emissive region 1910 of the sub-pixel(s) 264 x.

Such a mechanism is illustrated in the schematic diagrams of FIGS.28A-28D. These diagrams illustrate various stages of manufacturing anexample version, shown generally at 2800, of the device 100.

FIG. 28A shows a stage 2810 of manufacturing the device 2800. In thestage 2810, a substrate 110 is provided. The substrate 110 comprises afirst emissive region 1910 a and a second emissive region 1910 b. Insome non-limiting examples, the first emissive region 1910 a and/or thesecond emissive region 1910 b may be surrounded and/or spaced-apart byat least one non-emissive region 1920 a-1920 c. In some non-limitingexamples, the first emissive region 1910 a and/or the second emissiveregion 1910 b may each correspond to a (sub-) pixel 340/264 x.

FIG. 28B shows a stage 2820 of manufacturing the device 2800. In thestage 2820, an initial conductive coating 830 ₀ is deposited on anexposed layer surface 111 of an underlying material, in this case thesubstrate 110. The initial conductive coating 830 ₀ is deposited acrossthe first emissive region 1910 a and the second emissive region 1910 b.In some non-limiting examples, the initial conductive coating 830 ₀ isdeposited across at least one of the non-emissive regions 1920 a-1920 c.

In some non-limiting examples, the initial conductive coating 830 ₀ maybe deposited using an open mask and/or a mask-free deposition process.

FIG. 28C shows a stage 2830 of manufacturing the device 2800. In thestage 2830, an NIC 810 is selectively deposited over a first portion ofthe initial conductive coating 830 ₀. As shown in the figure, in somenon-limiting examples, the NIC 810 is deposited across the firstemissive region 1910 a, while in some non-limiting examples, the secondemissive region 1910 b and/or in some non-limiting examples, at leastone of the non-emissive regions 1920 a-1920 c are substantially devoidof the NIC 810.

FIG. 28D shows a stage 2840 of manufacturing the device 2800. In thestage 2840, a first conductive coating 830 a may be deposited acrossthose second portions of the device 2800 that are substantially devoidof the NIC 810. In some non-limiting examples, the first conductivecoating 830 a may be deposited across the second emissive region 1910 band/or, in some non-limiting examples, at least one of the non-emissiveregion 1920 a-1920 c.

Those having ordinary skill in the relevant art will appreciate that theevaporative process shown in FIG. 28D and described in detail inconnection with any one or more of FIGS. 7-8, 11A-11B and/or 12A-12Cmay, although not shown, for simplicity of illustration, equally bedeposited in any one or more of the preceding stages described in FIGS.28A-28C.

Those having ordinary skill in the relevant art will appreciate that themanufacture of the device 2800 may in some non-limiting examples,encompass additional stages that are not shown for simplicity ofillustration. Such additional stages may include, without limitation,depositing one or more NICs 810, depositing one or more NPCs 1120,depositing one or more additional conductive coatings 830, depositing anoutcoupling coating and/or encapsulation of the device 2800.

Those having ordinary skill in the relevant art will appreciate thatwhile the manufacture of the device 2800 has been described andillustrated in connection with a first emissive region 1910 a and asecond emissive region 1910 b, in some non-limiting examples, theprinciples derived therefrom may equally be deposited on the manufactureof devices having more than two emissive regions 1910.

In some non-limiting examples, such principles may be deposited ondeposit conductive coating(s) of varying thickness for emissiveregion(s) 1910 corresponding to sub-pixel(s) 264 x, in some non-limitingexamples, in an OLED display device 100, having different emissionspectra. In some non-limiting examples, the first emissive region 1910 amay correspond to a sub-pixel 264 x configured to emit light of a firstwavelength and/or emission spectrum and/or in some non-limitingexamples, the second emissive region 1910 b may correspond to asub-pixel 264 x configured to emit light of a second wavelength and/oremission spectrum. In some non-limiting examples, the device 2800 maycomprise a third emissive region 1910 c (FIG. 29A) that may correspondto a sub-pixel 264 x configured to emit light of a third wavelengthand/or emission spectrum.

In some non-limiting examples, the first wavelength may be less than,greater than, and/or equal to at least one of the second wavelengthand/or the third wavelength. In some non-limiting examples, the secondwavelength may be less than, greater than, and/or equal to at least oneof the first wavelength and/or the third wavelength. In somenon-limiting examples, the third wavelength may be less than, greaterthan and/or equal to at least one of the first wavelength and/or thesecond wavelength.

In some non-limiting examples, the device 2800 may also comprise atleast one additional emissive region 1910 (not shown) that may in somenon-limiting examples be configured to emit light having a wavelengthand/or emission spectrum that is substantially identical to at least oneof the first emissive region 1910 a, the second emissive region 1910 band/or the third emissive region 1910 c.

In some non-limiting examples, the NIC 810 may be selectively depositedusing a shadow mask that may also have been used to deposit the at leastone semiconducting layer 130 of the first emissive region 1910 a. Insome non-limiting examples, such shared use of a shadow mask may allowthe optical microcavity effect(s) to be tuned for each sub-pixel 264 xin a cost-effective manner.

The use of such mechanism to create an example version 2900 of thedevice 100 having sub-pixel(s) 264 x of a given pixel 340 with modulatedmicro-cavity effects is described in FIGS. 29A-29D.

In FIG. 29A, a stage 2810 of manufacture of the device 2900 is shown ascomprising a substrate 110, a TFT insulating layer 280 and a pluralityof first electrodes 120 a-120 c, formed on a surface of the TFTinsulating layer 280.

The substrate 110 may comprise the base substrate 112 (not shown forpurposes of simplicity of illustration) and/or at least one TFTstructure 200 a-200 c corresponding to and for driving an emissiveregion 1910 a-1910 c each having a corresponding sub-pixel 264 x,positioned substantially thereunder and electrically coupled to itsassociated first electrode 120 a-120 c. PDL(s) 440 a-440 d are formedover the substrate 110, to define emissive region(s) 1910 a-1910 c. ThePDL(s) 440 a-440 d cover edges of their respective first electrodes 120a-120 c.

In some non-limiting examples, at least one semiconducting layer 130a-130 c is deposited over exposed region(s) of their respective firstelectrodes 120 a-120 c and, in some non-limiting examples, at leastparts of the surrounding PDLs 440 a-440 d.

In some non-limiting examples, an initial conductive coating 830 ₀ maybe deposited over the at least one semiconducting layer(s) 130 a-130 c.In some non-limiting examples, the initial conductive coating 830 ₀ maybe deposited using an open mask and/or mask-free deposition process. Insome non-limiting examples, such deposition may be effected by exposingthe entire exposed layer surface 111 of the device 2900 to a vapor fluxof the initial conductive coating 830 ₀, which in some non-limitingexamples may be Mg, to deposit the initial conductive coating 830 ₀ overthe at least one semiconducting layer(s) 130 a-130 c to form a firstlayer of the second electrode 140 a (not shown), which in somenon-limiting examples may be a common electrode, at least for the firstemissive region 1910 a. Such common electrode has a first thicknesst_(c1) in the first emissive region 1910 a. The first thickness t_(c1)may correspond to a thickness of the initial conductive coating 830 ₀.

In some non-limiting examples, a first NIC 810 a is selectivelydeposited over first portions of the device 2810, comprising the firstemissive region 1910 a.

In some non-limiting examples, a first conductive coating 830 a may bedeposited over the device 2900. In some non-limiting examples, the firstconductive coating 830 a may be deposited using an open mask and/ormask-free deposition process. In some non-limiting examples, suchdeposition may be effected by exposing the entire exposed layer surface111 of the device 2810 to a vapour flux of the first conductive coating830 a, which in some non-limiting examples may be Mg, to deposit thefirst conductive coating 830 a over the initial conductive coating 830 ₀that is substantially devoid of the first NIC 810 a, in some examples,the second and third emissive region 1910 b, 1910 c and/or at leastpart(s) of the non-emissive region(s) 1920 in which the PDLs 440 a-440 dlie, such that the first conductive coating 830 a is deposited on thesecond portion(s) of the initial conductive coating 830 ₀ that aresubstantially devoid of the first NIC 810 a to form a second layer ofthe second electrode 140 b (not shown), which in some non-limitingexamples, may be a common electrode, at least for the second emissiveregion 1910 b. Such common electrode has a second thickness t_(c2) inthe second emissive region 1910 b. The second thickness t_(c2) maycorrespond to a combined thickness of the initial conductive coating 830₀ and of the first conductive coating 830 a and may in some non-limitingexamples be greater than the first thickness t_(c1).

In FIG. 29B, a stage 2920 of manufacture of the device 2900 is shown.

In some non-limiting examples, a second NIC 810 b is selectivelydeposited over further first portions of the device 2900, comprising thesecond emissive region 1910 b.

In some non-limiting examples, a second conductive coating 830 b may bedeposited over the device 2900. In some non-limiting examples, thesecond conductive coating 830 b may be deposited using an open maskand/or mask-free deposition process. In some non-limiting examples, suchdeposition may be effected by exposing the entire exposed layer surface111 of the device 2900 to a vapour flux of the second conductive coating830 b, which in some non-limiting examples may be Mg, to deposit thesecond conductive coating 830 b over the first conductive coating 830 athat is substantially devoid of either the first NIC 810 a or the secondNIC 810 b, in some examples, the third emissive region 1910 c and/or atleast part(s) of the non-emissive region 1920 in which the PDLs 440a-440 d lie, such that the second conductive coating 830 b is depositedon the further second portion(s) of the first conductive coating 830 athat are substantially devoid of the second NIC 810 b to form a thirdlayer of the second electrode 140 c (not shown), which in somenon-limiting examples, may be a common electrode, at least for the thirdemissive region 1910 c. Such common electrode has a third thicknesst_(c3) in the third emissive region 1910 c. The third thickness t_(c3)may correspond to a combined thickness of the initial conductive coating830 ₀, the first conductive coating 830 a and the second conductivecoating 830 b and may in some non-limiting examples be greater thaneither or both of the first thickness t_(c1) and the second thicknesst_(c2).

In FIG. 29C, a stage 2930 of manufacture of the device 2900 is shown.

In some non-limiting examples, a third NIC 810 c is selectivelydeposited over additional first portions of the device 2900, comprisingthe third emissive region 1910 b.

In FIG. 29D, a stage 2940 of manufacture of the device 2900 is shown.

In some non-limiting examples, at least one auxiliary electrode 1750 isdisposed in the non-emissive region(s) 1920 of the device 2900 betweenneighbouring emissive region 1910 a-1910 c thereof and in somenon-limiting examples, over the PDLs 440 a-440 d. In some non-limitingexamples, the conductive coating 830 used to deposit the at least oneauxiliary electrode 1750 may be deposited using an open mask and/ormask-free deposition process. In some non-limiting examples, suchdeposition may be effected by exposing the entire exposed layer surface111 of the device 2900 to a vapour flux of the conductive coatingmaterial 831, which in some non-limiting examples may be Mg, to depositthe conductive coating 830 over the exposed parts of the initialconductive coating 830 ₀, the first conductive coating 830 a and thesecond conductive coating 830 b that is substantially devoid of any ofthe first NIC 810 a the second NIC 810 b and/or the third NIC 810 c,such that the conductive coating 830 is deposited on an additionalsecond portion comprising the exposed part(s) of the initial conductivecoating 830 ₀, the first conductive coating 830 a and/or the secondconductive coating 830 b that are substantially devoid of any of thefirst NIC 810 a, the second NIC 810 b and/or the third NIC 810 c to formthe at least one auxiliary electrode 1750. Each of the at least oneauxiliary electrode 1750 is electrically coupled to a respective one ofthe second electrodes 140 a-140 c. In some non-limiting examples, eachof the at least one auxiliary electrode 1750 is in physical contact withsuch second electrode 140 a-140 c.

In some non-limiting examples, the first emissive region 1910 a, thesecond emissive region 1910 b and the third emissive region 1910 c maybe substantially devoid of the material used to form the at least oneauxiliary electrode 1750.

In some non-limiting examples, at least one of the initial conductivecoating 830 ₀, the first conductive coating 830 a and/or the secondconductive coating 830 b may be transmissive and/or substantiallytransparent in at least a part of the visible wavelength range of theelectromagnetic spectrum. Thus, if the first conductive coating 830 aand/or the second conductive coating 830 b (and/or any additionalconductive coating(s) 830) is disposed on top of the initial conductivecoating 830 ₀ to form a multi-coating electrode 120, 140, 1750 that mayalso be transmissive and/or substantially transparent in at least a partof the visible wavelength range of the electromagnetic spectrum. In somenon-limiting examples, the transmittance of any one or more of theinitial conductive coating 830 ₀, the first conductive coating 830 a,the second conductive coating 830 b, any additional conductivecoating(s) 830, and/or the multi-coating electrode 120, 140, 1750 may begreater than about 30%, greater than about 40% greater than about 45%,greater than about 50%, greater than about 60%, greater than about 70%,greater than about 75%, and/or greater than about 80% in at least a partof the visible wavelength range of the electromagnetic spectrum.

In some non-limiting examples, a thickness of the initial conductivecoating 830 ₀, the first conductive coating 830 a and/or the secondconductive coating 830 b may be made relatively thin to maintain arelatively high transmittance. In some non-limiting examples, thethickness of the initial conductive coating 830 ₀ may be about 5 to 30nm, about 8 to 25 nm, and/or about 10 to 20 nm. In some non-limitingexamples, the thickness of the first conductive coating 830 a may beabout 1 to 25 nm, about 1 to 20 nm, about 1 to 15 nm, about 1 to 10 nm,and/or about 3 to 6 nm. In some non-limiting examples, the thickness ofthe second conductive coating 830 b may be about 1 to 25 nm, about 1 to20 nm, about 1 to 15 nm, about 1 to 10 nm, and/or about 3 to 6 nm. Insome non-limiting examples, the thickness of a multi-coating electrodeformed by a combination of the initial conductive coating 830 ₀, thefirst conductive coating 830 a, the second conductive coating 830 band/or any additional conductive coating(s) 830 may be about 6 to 35 nm,about 10 to 30 nm, about 10 to 25 nm and/or about 12 to 18 nm.

In some non-limiting examples, a thickness of the at least one auxiliaryelectrode 1750 may be greater than the thickness of the initialconductive coating 830 ₀, the first conductive coating 830 a, the secondconductive coating 830 b and/or a common electrode. In some non-limitingexamples, the thickness of the at least one auxiliary electrode 1750 maybe greater than about 50 nm, greater than about 80 nm, greater thanabout 100 nm, greater than about 150 nm, greater than about 200 nm,greater than about 300 nm, greater than about 400 nm, greater than about500 nm, greater than about 700 nm, greater than about 800 nm, greaterthan about 1 μm, greater than about 1.2 μm, greater than about 1.5 μm,greater than about 2 μm, greater than about 2.5 μm, and/or greater thanabout 3 μm.

In some non-limiting examples, the at least one auxiliary electrode 1750may be substantially non-transparent and/or opaque. However, since theat least one auxiliary electrode 1750 may be in some non-limitingexamples provided in a non-emissive region 1920 of the device 2900, theat least one auxiliary electrode 1750 may not cause or contribute tosignificant optical interference. In some non-limiting examples, thetransmittance of the at least one auxiliary electrode 1750 may be lessthan about 50%, less than about 70%, less than about 80%, less thanabout 85%, less than about 90%, and/or less than about 95% in at least apart of the visible wavelength range of the electromagnetic spectrum.

In some non-limiting examples, the at least one auxiliary electrode 1750may absorb light in at least a part of the visible wavelength range ofthe electromagnetic spectrum.

In some non-limiting examples, a thickness of the first NIC 810 a, thesecond NIC 810 b, and/or the third NIC 810 c disposed in the firstemissive region 1910 a, the second emissive region 1910 b and/or thethird emissive region 1910 c respectively, may be varied according to acolour and/or emission spectrum of light emitted by each emissive region1910 a-1910 c. As shown in FIGS. 29C-29D, the first NIC 810 a may have afirst NIC thickness t_(n1), the second NIC 810 b may have a second NICthickness t_(n2) and/or the third NIC 810 c may have a third NICthickness t_(n3). In some non-limiting examples, the first NIC thicknesst_(n1), the second NIC thickness t_(n2) and/or the third NIC thicknesst_(n3) may be substantially the same as one another. In somenon-limiting examples, the first NIC thickness t_(n1), the second NICthickness t_(n2) and/or the third NIC thickness t_(n3) may be differentfrom one another.

In some non-limiting examples, the device 2900 may also comprise anynumber of emissive regions 1910 a-1910 c and/or (sub-) pixel(s) 340/264x thereof. In some non-limiting examples, a device may comprise aplurality of pixels 340, wherein each pixel 340 comprises two, three ormore sub-pixel(s) 264 x.

Those having ordinary skill in the relevant art will appreciate that thespecific arrangement of (sub-) pixel(s) 340/264 x may be varieddepending on the device design. In some non-limiting examples, thesub-pixel(s) 264 x may be arranged according to known arrangementschemes, including without limitation, RGB side-by-side, diamond and/orPenTile®.

Conductive Coating for Electrically Coupling an Electrode to anAuxiliary Electrode

Turning to FIG. 30 , there is shown a cross-sectional view of an exampleversion 3000 of the device 100. The device 3000 comprises in a lateralaspect, an emissive region 1910 and an adjacent non-emissive region1920.

In some non-limiting examples, the emissive region 1910 corresponds to asub-pixel 264 x of the device 3000. The emissive region 1910 has asubstrate 110, a first electrode 120, a second electrode 140 and atleast one semiconducting layer 130 arranged therebetween.

The first electrode 120 is disposed on an exposed layer surface 111 ofthe substrate 110. The substrate 110 comprises a TFT structure 200, thatis electrically coupled to the first electrode 120. The edges and/orperimeter of the first electrode 120 is generally covered by at leastone PDL 440.

The non-emissive region 1920 has an auxiliary electrode 1750 and a firstpart of the non-emissive region 1920 has a projecting structure 3060arranged to project over and overlap a lateral aspect of the auxiliaryelectrode 1750. The projecting structure 3060 extends laterally toprovide a sheltered region 3065. By way of non-limiting example, theprojecting structure 3060 may be recessed at and/or near the auxiliaryelectrode 1750 on at least one side to provide the sheltered region3065. As shown, the sheltered region 3065 may in some non-limitingexamples, correspond to a region on a surface of the PDL 440 thatoverlaps with a lateral projection of the projecting structure 3060. Thenon-emissive region 1920 further comprises a conductive coating 830disposed in the sheltered region 3065. The conductive coating 830electrically couples the auxiliary electrode 1750 with the secondelectrode 140.

An NIC 810 a is disposed in the emissive region 1910 over the exposedlayer surface 111 of the second electrode 140. In some non-limitingexamples, an exposed layer surface 111 of the projecting structure 3060is coated with a residual thin conductive film 3040 from deposition of athin conductive film to form the second electrode 140. In somenon-limiting examples, a surface of the residual thin conductive film3040 is coated with a residual NIC 810 b from deposition of the NIC 810.

However, because of the lateral projection of the projecting structure3060 over the sheltered region 3065, the sheltered region 3065 issubstantially devoid of NIC 810. Thus, when a conductive coating 830 isdeposited on the device 3000 after deposition of the NIC 810, theconductive coating 830 is deposited on and/or migrates to the shelteredregion 3065 to couple the auxiliary electrode 1750 to the secondelectrode 140.

Those having ordinary skill in the relevant art will appreciate that anon-limiting example has been shown in FIG. 30 and that variousmodifications may be apparent. By way of non-limiting example, theprojecting structure 3060 may provide a sheltered region 3065 along atleast two of its sides. In some non-limiting examples, the projectingstructure 3060 may be omitted and the auxiliary electrode 1750 mayinclude a recessed portion that defines the sheltered region 3065. Insome non-limiting examples, the auxiliary electrode 1750 and theconductive coating 830 may be disposed directly on a surface of thesubstrate 110, instead of the PDL 440.

Selective Deposition of Optical Coating

In some non-limiting examples, a device 100 (not shown), which in somenon-limiting examples may be an opto-electronic device, comprises asubstrate 110, an NIC 810 and an optical coating. The NIC 810 covers afirst lateral portion of the substrate 110. The optical coating covers asecond lateral portion of the substrate. At least a part of the NIC 810is substantially devoid of the optical coating.

In some non-limiting examples, the optical coating may be used tomodulate optical properties of light being transmitted, emitted and/orabsorbed by the device 100, including without limitation, plasmon modes.By way of non-limiting example, the optical coating may be used as anoptical filter, index-matching coating, optical out-coupling coating,scattering layer, diffraction grating, and/or parts thereof.

In some non-limiting examples, the optical coating may be used tomodulate at least one optical microcavity effect in the device 100 by,without limitation, tuning the total optical path length and/or therefractive index thereof. At least one optical property of the device100 may be affected by modulating at least one optical microcavityeffect including without limitation, the output light, including withoutlimitation, an angular dependence of a brightness and/or a color shiftthereof. In some non-limiting examples, the optical coating may be anon-electrical component, that is, the optical coating may not beconfigured to conduct and/or transmit electrical current during normaldevice operations.

In some non-limiting examples, the optical coating may be formed of anymaterial used as a conductive coating 830 and/or employing any mechanismof depositing a conductive coating 830 as described herein.

Edge Effects of NICs and Conductive Coatings

FIGS. 31A-31I describe various potential behaviours of NICs 810 at adeposition interface with conductive coatings 830.

Turning to FIG. 31A, there is shown a first example of a part of anexample version 3100 of the device 100 at an NIC deposition boundary.The device 3100 comprises a substrate 110 having a layer surface 111. AnNIC 810 is deposited over a first portion 3110 of the layer surface 111.A conductive coating 830 is deposited over a second portion 3120 of thelayer surface 111. As shown, by way of non-limiting example, the firstportion 3110 and the second portion 3120 are distinct andnon-overlapping portions of the layer surface 111.

The conductive coating 830 comprises a first part 830 ₁ and a remainingpart 830 ₂. As shown, by way of non-limiting example, the first part 830₁ of the conductive coating 830 substantially covers the second portion3120 and the second part 830 ₂ of the conductive coating 830 partiallyprojects over and/or overlaps a first part of the NIC 810.

In some non-limiting examples, since the NIC 810 is formed such that itssurface 3111 exhibits a relatively low affinity or initial stickingprobability S₀ for a material used to form the conductive coating 830,there is a gap 3129 formed between the projecting and/or overlappingsecond part 830 ₂ of the conductive coating 830 and the surface 3111 ofthe NIC 810. As a result, the second part 830 ₂ is not in physicalcontact with the NIC 810 but is spaced-apart therefrom by the gap 3129in a cross-sectional aspect. In some non-limiting examples, the firstpart 830 ₁ of the conductive coating 830 may be in physical contact withthe NIC 810 at an interface and/or boundary between the first portion3110 and the second portion 3120.

In some non-limiting examples, the projecting and/or overlapping secondpart 830 ₂ of the conductive coating 830 may extend laterally over theNIC 810 by a comparable extent as a thickness t₁ of the conductivecoating 830. By way of non-limiting example, as shown, a width w₂ of thesecond part 830 ₂ may be comparable to the thickness t₁. In somenon-limiting examples, a ratio of w₂:t₁ may be in a range of about 1:1to about 1:3, about 1:1 to about 1:1.5, and/or about 1:1 to about 1:2.While the thickness t₁ may in some non-limiting examples be relativelyuniform across the conductive coating 830, in some non-limitingexamples, the extent to which the second part 830 ₂ projects and/oroverlaps with the NIC 810 (namely w₂) may vary to some extent acrossdifferent parts of the layer surface 111.

Turning now to FIG. 31B, the conductive coating 830 is shown to includea third part 830 ₃ disposed between the second part 830 ₂ and the NIC810. As shown, the second part 830 ₂ of the conductive coating 830extends laterally over and is spaced apart from the third part 830 ₃ ofthe conductive coating 830 and the third part 830 ₃ may be in physicalcontact with the surface 3111 of the NIC 810. A thickness t₃ of thethird part 830 ₃ of the conductive coating 830 may be less and in somenon-limiting examples, substantially less than the thickness t₁ of thefirst part 830 ₁ thereof. In some non-limiting examples, a width w₃ ofthe third part 830 ₃ may be greater than the width w₂ of the second part830 ₂. In some non-limiting examples, the third part 830 ₃ may extendlaterally to overlap the NIC 810 to a greater extent than the secondpart 830 ₂. In some non-limiting examples, a ratio of w₃:t₁ may be in arange of about 1:2 to about 3:1 and/or about 1:1.2 to about 2.5:1. Whilethe thickness t₁ may in some non-limiting examples be relatively uniformacross the conductive coating 830, in some non-limiting examples, theextent to which the third part 830 ₃ projects and/or overlaps with theNIC 810 (namely w₃) may vary to some extent across different parts ofthe layer surface 111.

The thickness t₃ of the third part 830 ₃ may be no greater than and/orless than about 5% of the thickness t₁ of the first part 830 ₁. By wayof non-limiting example, t₃ may be no greater than and/or less thanabout 4%, no greater than and/or less than about 3%, no greater thanand/or less than about 2%, no greater than and/or less than about 1%,and/or no greater than and/or less than about 0.5% of t₁. Instead of,and/or in addition to, the third part 830 ₃ being formed as a thin film,as shown, the material of the conductive coating 830 may form as islandsand/or disconnected clusters on a part of the NIC 810. By way ofnon-limiting example, such islands and/or disconnected clusters maycomprise features that are physically separated from one another, suchthat the islands and/or clusters do not form a continuous layer.

Turning now to FIG. 31C, an NPC 1120 is disposed between the substrate110 and the conductive coating 830. The NPC 1120 is disposed between thefirst part 830 ₁ of the conductive coating 830 and the second portion3120 of the substrate 110. The NPC 1120 is illustrated as being disposedon the second portion 3120 and not on the first portion 3110, where theNIC 810 has been deposited. The NPC 1120 may be formed such that, at aninterface and/or boundary between the NPC 1120 and the conductivecoating 830, a surface of the NPC 1120 exhibits a relatively highaffinity or initial sticking probability S₀ for the material of theconductive coating 830. As such, the presence of the NPC 1120 maypromote the formation and/or growth of the conductive coating 830 duringdeposition.

Turning now to FIG. 31D, the NPC 1120 is disposed on both the firstportion 3110 and the second portion 3120 of the substrate 110 and theNIC 810 covers a part of the NPC 1120 disposed on the first portion3110. Another part of the NPC 1120 is substantially devoid of the NIC810 and the conductive coating 830 covers such part of the NPC 1120.

Turning now to FIG. 31E, the conductive coating 830 is shown topartially overlap a part of the NIC 810 in a third portion 3130 of thesubstrate 110. In some non-limiting examples, in addition to the firstpart 830 ₁ and the second part 830 ₂, the conductive coating 830 furtherincludes a fourth part 830 ₄. As shown, the fourth part 830 ₄ of theconductive coating 830 is disposed between the first part 830 ₁ and thesecond part 830 ₂ of the conductive coating 830 and the fourth part 830₄ may be in physical contact with the layer surface 3111 of the NIC 810.In some non-limiting examples, the overlap in the third portion 3130 maybe formed as a result of lateral growth of the conductive coating 830during an open mask and/or mask-free deposition process. In somenon-limiting examples, while the layer surface 3111 of the NIC 810 mayexhibit a relatively low initial sticking probability S₀ for thematerial of the conductive coating 830, and thus the probability of thematerial nucleating the layer surface 3111 is low, as the conductivecoating 830 grows in thickness, the conductive coating 830 may also growlaterally and may cover a subset of the NIC 810 as shown.

Turning now to FIG. 31F the first portion 3110 of the substrate 110 iscoated with the NIC 810 and the second portion 3120 adjacent thereto iscoated with the conductive coating 830. In some non-limiting examples,it has been observed that conducting an open mask and/or mask-freedeposition of the conductive coating 830 may result in the conductivecoating 830 exhibiting a tapered cross-sectional profile at and/or nearan interface between the conductive coating 830 and the NIC 810.

In some non-limiting examples, a thickness of the conductive coating 830at and/or near the interface may be less than an average thickness ofthe conductive coating 830. While such tapered profile is shown as beingcurved and/or arched, in some non-limiting examples, the profile may, insome non-limiting examples be substantially linear and/or non-linear. Byway of non-limiting example, the thickness of the conductive coating 830may decrease, without limitation, in a substantially linear, exponentialand/or quadratic fashion in a region proximal to the interface.

It has been observed that a contact angle θ_(c) of the conductivecoating 830 at and/or near the interface between the conductive coating830 and the NIC 810 may vary, depending on properties of the NIC 810,such as a relative affinity and/or an initial sticking probability S₀.It is further postulated that the contact angle θ_(c) of the nuclei mayin some non-limiting examples, dictate the thin film contact angle ofthe conductive coating 830 formed by deposition. Referring to FIG. 31Fby way of non-limiting example, the contact angle θ_(c) may bedetermined by measuring a slope of a tangent of the conductive coating830 at or near the interface between the conductive coating 830 and theNIC 810. In some non-limiting examples, where the cross-sectional taperprofile of the conductive coating 830 is substantially linear, thecontact angle θ_(c) may be determined by measuring the slope of theconductive coating 830 at and/or near the interface. As will beappreciated by those having ordinary skill in the relevant art, thecontact angle θ_(c) may be generally measured relative to an angle ofthe underlying surface. In the present disclosure, for purposes ofsimplicity of illustration, the coatings 810, 830 are shown deposited ona planar surface. However, those having ordinary skill in the relevantart will appreciate that such coatings 810, 830 may be deposited onnon-planar surfaces.

In some non-limiting examples, the contact angle θ_(c) of the conductivecoating 830 may be greater than about 90°. Referring now to FIG. 31G, byway of non-limiting example, the conductive coating 830 is shown asincluding a part extending past the interface between the NIC 810 andthe conductive coating 830 and is spaced apart from the NIC by a gap3129. In such non-limiting scenario, the contact angle θ_(c) may, insome non-limiting examples, be greater than about 90°.

In some non-limiting examples, it may be advantageous to form aconductive coating 830 exhibiting a relatively high contact angle θ_(c).By way of non-limiting example, the contact angle θ_(c) may be greaterthan about 10°, greater than about 15°, greater than about 20°, greaterthan about 25°, greater than about 30°, greater than about 35°, greaterthan about 40°, greater than about 50°, greater than about 70°, greaterthan about 70°, greater than about 75°, and/or greater than about 80°.By way of non-limiting example, a conductive coating 830 having arelatively high contact angle θ_(c) may allow for creation of finelypatterned features while maintaining a relatively high aspect ratio. Byway of non-limiting example, it may be desirable to form a conductivecoating 830 exhibiting a contact angle θ_(c) greater than about 90°. Byway of non-limiting example, the contact angle θ_(c) may be greater thanabout 90°, greater than about 95°, greater than about 100°, greater thanabout 105°, greater than about 110° greater than about 120°, greaterthan about 130°, greater than about 135°, greater than about 140°,greater than about 145°, greater than about 150° and/or greater thanabout 170°.

Turning now to FIGS. 31H-31I, the conductive coating 830 partiallyoverlaps a part of the NIC 810 in the third portion 3130 of thesubstrate 100, which is disposed between the first portion 3110 and thesecond portion 3120 thereof. As shown, the subset of the conductivecoating 830 partially overlapping a subset of the NIC 810 may be inphysical contact with the surface 3111 thereof. In some non-limitingexamples, the overlap in the third region 3130 may be formed as a resultof lateral growth of the conductive coating 830 during an open maskand/or mask-free deposition process. In some non-limiting examples,while the surface 3111 of the NIC 810 may exhibit a relatively lowaffinity or initial sticking probability S₀ for the material of theconductive coating 830 and thus the probability of the materialnucleating on the layer surface 3111 is low, as the conductive coating830 grows in thickness, the conductive coating 830 may also growlaterally and may cover a subset of the NIC 810.

In the case of FIGS. 31H-31I, the contact angle θ_(c) of the conductivecoating 830 may be measured at an edge thereof near the interfacebetween it and the NIC 810, as shown. In FIG. 31I, the contact angleθ_(c) may be greater than about 90°, which may in some non-limitingexamples result in a subset of the conductive coating 830 being spacedapart from the NIC 810 by a gap 3129.

Capping Layer Tuned to Individual Emissive Region

In some non-limiting examples, an opto-electronic device 100 maycomprise a CPL 3610 to promote outcoupling of light emitted by thedevice 100, which may thus enhance an EQE thereof, including withoutlimitation, by enhancing emissions and/or adjust the angular spectraldistributions. Typically, such a CPL 3610 comprises a layer that extendsacross substantially all of the lateral aspect of the device 100,including without limitation, across all emissive regions 1910 therein.

Since, in some non-limiting examples, such CPLs 3610 are typicallyformed of a common CPL material and in some non-limiting examples, havea substantially common thickness, the use of such CPLs 3610 to tune theoptical characteristics of an individual emissive region 1910 and to aemission wavelength spectrum associated therewith may be substantiallylimited.

It will be understood by those having ordinary skill in the relevant artthat such CPL 3610 may be (at least) one of the plurality of layers ofthe device 100. Those having ordinary skill in the relevant art willappreciate that the CPL 3610 and the CPL material of which it iscomprised, especially when disposed as a film and under conditionsand/or by mechanisms substantially similar to those employed indepositing the CPL 3610, may exhibit largely similar optical and/orother properties.

For purposes of simplicity of description, in the present disclosure,the CPL 3610 and the CPL material of which it is comprised, may bereferred to collectively as a CPL(m), and such term may have appendedthereto, a character denoting a specific instance thereof.

Turning now to FIG. 36A, which roughly corresponds to FIG. 28C, there isshown a stage 3630 of manufacturing an example version 3600 of thedevice 2800.

In some non-limiting examples, the device 3600 comprises a plurality ofemissive regions 1910, comprising a first emissive region 1910 a and asecond emissive region 1910 b, each configured to emit light having arespective emission spectrum in a corresponding wavelength range, whichmay be characterized by an associated onset wavelength λ_(onset) and/oran associated peak wavelength λ_(max).

In some non-limiting examples, an emission spectrum that lies in theR(ed) portion of the visible light spectrum may be characterized by apeak wavelength λ_(max) that may lie in a wavelength range of 600 nm toabout 640 nm and in some non-limiting examples, may be substantiallyabout 620 nm.

In some non-limiting examples, an emission spectrum that lies in theG(reen) portion of the visible light spectrum may be characterized by apeak wavelength λ_(max) that may lie in a wavelength range of 510 nm toabout 540 nm and in some non-limiting examples, may be substantiallyabout 530 nm.

In some non-limiting examples, an emission spectrum that lies in theB(lue) portion of the visible light spectrum may be characterized by apeak wavelength λ_(max) that may lie in a wavelength range of 450 nm toabout 460 nm and in some non-limiting examples, may be substantiallyabout 455 nm.

Those having ordinary skill in the relevant art will appreciate that insome non-limiting examples, the first emissive region 1910 a and/or thesecond emissive region 1910 b may correspond to any one of a R(ed)sub-pixel 2641 that emits photons having an emission spectrum that liesin the R(ed) portion of the visible light spectrum, a G(reen) sub-pixel2642 that emits photons having an emission spectrum that lies in theG(reen) portion of the visible light spectrum, or a B(lue) sub-pixel2643 that emits photons having an emission spectrum that lies in theB(lue) portion of the visible light spectrum.

In the stage 3630, a first CPL 3610 a is selectively deposited over afirst portion of the exposed layer surface 111 of an underlyingmaterial. In some non-limiting examples, the underlying material may bean initial conductive coating 830 ₀. As shown in the figure, in somenon-limiting examples, a CPL material for depositing the first CPL 3610a is deposited across the first emissive region 1910 a, while in somenon-limiting examples, the second emissive region 1910 b and/or in somenon-limiting examples, at least one of the non-emissive regions 1920a-1920 c are substantially devoid of the first CPL 3610 a. In somenon-limiting examples, the first CPL 3610 a may be deposited over atleast one of the non-emissive regions 1920 a-1920 c.

In some non-limiting examples, the first CPL 3610 a has opticalcharacteristics tuned to the first emission spectrum. In somenon-limiting examples, a thickness, a morphology, and/or a materialcomposition, of the first CPL 3610 a are tuned to provide a highrefractive index across at least a portion of the first emissionspectrum, including without limitation, at least one of the first onsetwavelength λ_(onset a) and/or the first peak wavelength λ_(max a).

In some non-limiting examples, the first CPL 3610 a has a refractiveindex that is greater than or equal to about 1.9, greater than or equalto about 1.95, greater than or equal to about 2.0, greater than or equalto about 2.05, greater than or equal to about 2.1, greater than or equalto about 2.2, greater than or equal to about 2.3, and/or greater than orequal to about 2.5, in at least a part of the first emission spectrum,which in some non-limiting examples, may comprise the first peakwavelength λ_(max a).

In some non-limiting examples, there may be, at and/or proximate to theabsorption edge, a generally positive correlation between refractiveindex and transmittance, or in other words, a generally negativecorrelation between refractive index and absorption at or near theabsorption edge. As a result, in some non-limiting examples, the opticalcharacteristics of the first CPL 3610 a are tuned such that theabsorption edge of the first CPL 3610 a is slightly lower than the firstonset wavelength λ_(onset a).

In some non-limiting examples, the absorption edge of a substance maycorrespond to a wavelength at which the extinction coefficient kdecreases and approaches a threshold value near 0. As a result, in somenon-limiting examples, tuning the optical characteristics of the firstCPL 3610 a with reference to the absorption edge of the first CPL 3610 aas disclosed herein, may serve as an approximate mechanism to provide ahigh refractive index across at least a portion of the first emissionspectrum as disclosed herein.

As a result, in some non-limiting examples, the first CPL 3610 a mayhave a first extinction coefficient k_(a) that is high at a wavelengthshorter than the first onset wavelength λ_(onset a). In somenon-limiting examples, the first CPL 3610 a may have a first extinctioncoefficient k_(a) that is greater than or equal to about 0.1, greaterthan or equal to 0.3, greater than or equal to about 0.5, greater thanor equal to about 0.75, greater than or equal to about 0.8, and/orgreater than or equal to about 0.9, at a wavelength below the firstonset wavelength λ_(onset a).

In some non-limiting examples, the first CPL 3610 a may additionally actas a patterning coating 810, in that it exhibits a relatively lowinitial sticking coefficient for the conductive coating material 831relative to the exposed layer surface 111 of the underlying material,including without limitation, the initial conductive coating 830 ₀, andbe selectively deposited over first portions of the initial conductivecoating 830 ₀ in the example device 2800, comprising the first emissiveregion 1910 a, to inhibit deposition of a first conductive coating 830 athereon.

FIG. 36B shows a stage 3640 of manufacturing the device 3600. In thestage 3620, a first conductive coating 830 a may be deposited, byexposing the entire surface of the device 3600 to a vapour flux of theconductive coating material 831 to selectively deposit it as the firstconductive coating 830 a over those second portions of the device 3600that are substantially devoid of the first CPL 3610 a.

In some non-limiting examples, the first conductive coating 830 a may bedeposited across the second emissive region 1910 b and/or, in somenon-limiting examples, at least one of the non-emissive regions 1920a-1920 c. In some non-limiting examples, the first conductive coating830 a may be deposited over at least one of the non-emissive regions1920 a-1920 c.

In some non-limiting examples, the first conductive coating 830 a may bedeposited using an open mask and/or a mask-free deposition process.

Those having ordinary skill in the relevant art will appreciate that, insome non-limiting examples, where the first CPL 3610 a does not act as apatterning coating 810, a further patterning coating 810 (not shown) maybe disposed where and when appropriate to allow patterning of the firstconductive coating 830 a to be deposited in desired locations, even inthe absence of a FMM.

In some non-limiting examples, the conductive coating material 831 usedto form the first conductive coating 830 a may comprise variousmaterials used to form light-transmissive conductive layers and/orcoatings, including without limitation, TCOs (including withoutlimitation, ITO, FTO), non-metallic thin films, metal thin films,including without limitation Mg, Al, Yb, Ag, Zn, and/or Cd, and/orcombinations thereof, including without limitation, alloys containingany of these, including without limitation, Mg:Ag, Mg:Yb, and/orcombinations thereof in an alloy composition ranging from about 1:10 toabout 10:1 by volume, and/or combinations thereof. The first conductivecoating 830 a may comprise a plurality of layers and/or coatings in amulti-layer coating.

In some non-limiting examples, the conductive coating material 831 usedto form the first conductive coating 830 a may be the same and/ordifferent from the conductive coating material 831 used to form theinitial conductive coating 830 ₀, if any.

Those having ordinary skill in the relevant art will appreciate that theevaporative process shown in FIG. 36B and described in detail inconnection with any one or more of FIGS. 7-8, 11A-11B and/or 12A-12Cmay, although not shown, for simplicity of illustration, equally bedeposited in any one or more of the preceding stages described in FIGS.28A-28B and/or 36A.

Those having ordinary skill in the relevant art will appreciate that themanufacture of the device 3600 may, in some non-limiting examples,encompass additional stages that are not shown for simplicity ofillustration. Such additional stages may include, without limitation,depositing one or more patterning coatings 810, 1120, depositing one ormore CPLs 3610, depositing one or more additional conductive coatings830, depositing an outcoupling coating and/or encapsulation of thedevice 2800.

Those having ordinary skill in the relevant art will appreciate that, insome non-limiting examples, the plurality of emissive regions 1910 maycomprise more than just the first emissive region 1910 a and the secondemissive region 1910 b as shown in the device 3600. In some non-limitingexamples, there may be three or more emissive regions 1910, eachconfigured to emit light having a respective emission spectrum in acorresponding wavelength range, which may be characterized by anassociated onset wavelength λ_(onset) and/or an associated peakwavelength λ_(max). In some non-limiting examples, there may be threeemissive regions 1910 a, 1910 b, 1910 c, corresponding to (in noparticular order) respective ones of a R(ed) sub-pixel 2641 that emitsphotons having an emission spectrum that lies in the R(ed) portion ofthe visible light spectrum, a G(reen) sub-pixel 2642 that emits photonshaving an emission spectrum that lies in the G(reen) portion of thevisible light spectrum, or a B(lue) sub-pixel 2643 that emits photonshaving an emission spectrum that lies in the B(lue) portion of thevisible light spectrum.

Turning now to FIG. 37A, there is shown a stage 3710 of manufacturing anexample version 3700 of the device 3600 that roughly corresponds to FIG.36B, but with three emissive regions 1910 a, 1910 b, 1910 c, surroundedby non-emissive regions 1920 a, 1920 b, 1920 c, 1920 d.

As shown in the figure, the first conductive coating 830 a may bedeposited, by exposing the entire surface of the device 3700 to a vapourflux of the conductive coating material 831 to selectively deposit it asthe first conductive coating 830 a over those second portions of thedevice 3700 that are substantially devoid of the first CPL 3610 a. Insome non-limiting examples, the first conductive coating 830 a may bedeposited across the second emissive region 1910 b and/or the thirdemissive region 1910 c and/or, in some non-limiting examples, at leastone of the non-emissive region 1920 a-1920 d. In some non-limitingexamples, the first conductive coating 830 a may be deposited over atleast one of the non-emissive regions 1920 a-1920 d.

FIG. 37B shows a stage 3720 of manufacturing the device 3700. In thestage 3720, a second CPL 3610 b is selectively deposited over a firstportion of the first conductive coating 830 a. As shown in the figure,in some non-limiting examples, a CPL material for depositing the secondCPL 3610 b is deposited across the second emissive region 1910 b, whilein some non-limiting examples, the third emissive region 1910 c and/orin some non-limiting examples, at least one of the non-emissive regions1920 a-1920 d are substantially devoid of the second CPL 3610 b. In somenon-limiting examples, the second CPL 3610 b may be deposited over atleast one of the non-emissive regions 1920 a-1920 d.

In some non-limiting examples, a thickness, a morphology, and/or amaterial composition, of the second CPL 3610 b are tuned to provide ahigh refractive index across at least a portion of the second emissionspectrum, including without limitation, at least one of the second onsetwavelength λ_(onset b) and/or the second peak wavelength λ_(max b).

In some non-limiting examples, the second CPL 3610 b has a refractiveindex that is greater than or equal to about 1.9, greater than or equalto about 1.95, greater than or equal to about 2.0, greater than or equalto about 2.05, greater than or equal to about 2.1, greater than or equalto about 2.2, greater than or equal to about 2.3, and/or greater than orequal to about 2.5, in at least a part of the second emission spectrum,which in some non-limiting examples, may comprise the second peakwavelength λ_(max b).

In some non-limiting examples, the optical characteristics of the secondCPL 3610 b are tuned such that the absorption edge of the second CPL3610 b is slightly lower than the second onset wavelength λ_(onset b).

In some non-limiting examples, the absorption edge of a substance maycorrespond to a wavelength at which the extinction coefficient kapproaches a threshold value near 0. As a result, in some non-limitingexamples, tuning the optical characteristics of the second CPL 3610 bwith reference to the absorption edge of the second CPL 3610 b asdisclosed herein, may serve as an approximate mechanism to provide ahigh refractive index across at least a portion of the second emissionspectrum as disclosed herein.

As a result, in some non-limiting examples, the second CPL 3610 b mayhave a second extinction coefficient kb that is low at a wavelengthbelow the second onset wavelength λ_(onset b). In some non-limitingexamples, the second CPL 3610 b may have a second extinction coefficientkb that is greater than or equal to about 0.1, greater than or equal to0.3, greater than or equal to about 0.5, greater than or equal to about0.75, greater than or equal to about 0.8, and/or greater than or equalto about 0.9, at a wavelength below the second onset wavelengthλ_(onset b).

In some non-limiting examples, the second CPL 3610 b may additionallyact as a patterning coating 810, in that it exhibits a relatively lowinitial sticking coefficient for the conductive coating material 831relative to the exposed layer surface 111 of the first conductivecoating 830 a, and be selectively deposited over first portions of thefirst conductive coating 830 a in the example device 3700, comprisingthe second emissive region 1910 b, to inhibit deposition of a secondconductive coating 830 b thereon.

In some non-limiting examples, the CPL material for depositing thesecond CPL 3610 b may be the same and/or different from the CPL materialfor depositing the first CPL 3610 a.

FIG. 37C shows a stage 3730 of manufacturing the device 3700. In thestage 3730, a second conductive coating 830 b may be deposited, byexposing the entire surface of the device 3700 to a vapour flux of theconductive coating material 831 to selectively deposit it as the secondconductive coating 830 b over those second portions of the device 3700that are substantially devoid of at least one of the first CPL 3610 aand the second CPL 3610 b. In some non-limiting examples, the secondconductive coating 830 b may be deposited across the third emissiveregion 1910 c and/or, in some non-limiting examples, at least one of thenon-emissive regions 1920 a-1920 d. In some non-limiting examples, thesecond conductive coating 830 b may be deposited over at least one ofthe non-emissive regions 1920 a-1920 d.

In some non-limiting examples, the second conductive coating 830 b maybe deposited using an open mask and/or a mask-free deposition process.

Those having ordinary skill in the relevant art will appreciate that, insome non-limiting examples, where the second CPL 3610 b does not act asa patterning coating 810, a patterning coating 810 (not shown) may bedisposed where and when appropriate to allow patterning of the secondconductive coating 830 b to be deposited in desired locations, even inthe absence of a FMM.

In some non-limiting examples, the conductive coating material 831 usedto form the second conductive coating 830 b may be the same and/ordifferent from the conductive coating material 831 used to form theinitial conductive coating 830 ₀, if any, and/or may be the same and/ordifferent from the conductive coating material 831 used to form thefirst conductive coating 830 a.

FIG. 37D shows a stage 3740 of manufacturing the device 3700. In thestage 3740, a third CPL 3610 c is selectively deposited over a firstportion of the second conductive coating 830 b. As shown in the figure,in some non-limiting examples, a CPL material for depositing the thirdCPL 3610 c is deposited across the third emissive region 1910 c, whilein some non-limiting examples, at least one of the non-emissive regions1920 a-1920 d are substantially devoid of the second CPL 3610 b. In somenon-limiting examples, the third CPL 3610 c may be deposited over atleast one of the non-emissive regions 1920 a-1920 d.

In some non-limiting examples, a thickness, a morphology, and/or amaterial composition, of the third CPL 3610 c are tuned to provide ahigh refractive index across at least a portion of the third emissionspectrum, including without limitation, at least one of the third onsetwavelength λ_(onset c) and/or the third peak wavelength λ_(max c).

In some non-limiting examples, the third CPL 3610 c has a refractiveindex that is greater than or equal to about 1.9, greater than or equalto about 1.95, greater than or equal to about 2.0, greater than or equalto about 2.05, greater than or equal to about 2.1, greater than or equalto about 2.2, greater than or equal to about 2.3, and/or greater than orequal to about 2.5, in at least a part of the third emission spectrum,which in some non-limiting examples, may comprise the third peakwavelength λ_(max c).

In some non-limiting examples, the optical characteristics of the thirdCPL 3610 c are tuned such that the absorption edge of the third CPL 3610c is slightly lower than the third onset wavelength λ_(onset c).

In some non-limiting examples, the absorption edge of a substance maycorrespond to a wavelength at which the extinction coefficient kapproaches a threshold value near 0. As a result, in some non-limitingexamples, tuning the optical characteristics of the third CPL 3610 cwith reference to the absorption edge of the third CPL 3610 c asdisclosed herein, may serve as an approximate mechanism to provide ahigh refractive index across at least a portion of the third emissionspectrum as disclosed herein.

As a result, in some non-limiting examples, the third CPL 3610 c mayhave a third extinction coefficient k_(c) that is low at a wavelengthbelow the third onset wavelength λ_(onset c). In some non-limitingexamples, the third CPL 3610 c may have a third extinction coefficientk_(c) that is greater than or equal to about 0.1, greater than or equalto 0.3, greater than or equal to about 0.5, greater than or equal toabout 0.75, greater than or equal to about 0.8, and/or greater than orequal to about 0.9, at a wavelength below the third onset wavelengthλ_(onset c).

In some non-limiting examples, the third CPL 3610 c may additionally actas a patterning coating 810, in that it exhibits a relatively lowinitial sticking coefficient for the conductive coating material 831relative to the exposed layer surface 111 of the second conductivecoating 830 b, and be selectively deposited over first portions of thesecond conductive coating 830 b in the example device 3700, comprisingthe third emissive region 1910 c, to inhibit deposition of a conductivecoating material 831 thereon for forming an auxiliary electrode 1750.

In some non-limiting examples, the CPL material for forming the thirdCPL 3610 c may be the same and/or different from: the CPL material forforming the first CPL 3610 a and/or the CPL material for forming thesecond CPL 3610 b.

FIG. 37E shows a stage 3750 of manufacturing the device 3700. In thestage 3750, a conductive coating material 831 may be deposited, byexposing the entire surface of the device 3700 to a vapour flux thereofto selectively deposit it as at least one auxiliary electrode 1750 overthose second portions of the device 3700 that are substantially devoidof the third CPL 3610 c. In some non-limiting examples, the at least oneauxiliary electrode 1750 may be deposited across at least one of thenon-emissive regions 1920 a-1920 d.

In some non-limiting examples, the at least one auxiliary electrode 1750may be deposited using an open mask and/or a mask-free depositionprocess.

Those having ordinary skill in the relevant art will appreciate that, insome non-limiting examples, where the third CPL 3610 c does not act as apatterning coating 810, a patterning coating 810 (not shown) may bedisposed where and when appropriate to allow patterning of the at leastone auxiliary electrode 1750 to be deposited in desired locations, evenin the absence of a FMM.

In some non-limiting examples, the conductive coating material 831 usedto form the at least one auxiliary electrode 1750 may be the same and/ordifferent from: the conductive coating material 831 used to form theinitial conductive coating 830 ₀, if any, the conductive coatingmaterial 831 used to form the first conductive coating 830 a, and/or theconductive coating 831 used to form the second conductive coating 830 b.

As previously discussed in connection with FIGS. 29A-29D, such amechanism may create an example version 3800 of the device 100 havingsub-pixel(s) 264 x of a given pixel 340 with modulated micro-cavityeffects as described in FIGS. 38A-38 f.

In FIG. 38A, a stage 3805 of manufacture of the device 3800 is shown ascomprising a substrate 110, a TFT insulating layer 280 and a pluralityof first electrodes 120 a-120 c, formed on a surface of the TFTinsulating layer 280.

The substrate 110 may comprise the base substrate 112 (not shown forpurposes of simplicity of illustration), at least one TFT structure 200a-200 c corresponding to and for driving an emissive region 1910 a-1910c each having a corresponding sub-pixel 264 x, positioned substantiallythereunder and electrically coupled to its associated first electrode120 a-120 c, PDL(s) 440 a-440 d formed over the substrate 110, to defineemissive region(s) 1910 a-1910 c that cover edges of their respectivefirst electrodes 120 a-120 c, and at least one semiconducting layer 130a-130 c deposited over exposed region(s) of their respective firstelectrodes 120 a-120 c and, in some non-limiting examples, at leastparts of the surrounding PDLs 440 a-440 d.

In the example stage 3805 of FIG. 38A, the emissive regions 1910 a, 1910b, 1910 c may comprise separate structures that are not electricallycoupled together. This may be achieved by depositing at least one PDLpatterning coating, which in some non-limiting examples, may comprise aPDL CPL 3810 a, 3810 b, 3810 c, 3810 d acting as a patterning coating810 across at least a part of the lateral aspect 420 of the non-emissiveregions 1920 a, 1920 b, 1920 c, 1920 c, including without limitation, insome non-limiting examples, an elevated portion of the correspondingPDLs 440 a, 440 b, 440 c, 440 d.

In some non-limiting examples, a CPL material for depositing the atleast one PDL CPL 3810 a, 3810 b, 3810 c, and/or 3810 d may be the sameand/or different from: the CPL material for depositing the first CPL3610 a, the CPL material for depositing the second CPL 3610 b, and/orthe CPL material for depositing the third CPL 3610 c.

An alternate stage 3810 of the device 3800 is shown in FIG. 38B. In thestage 3810, the step of depositing a patterning coating 810, which may,in some non-limiting examples, comprise the at least one PDL CPLs 3810a, 3810 b, 3810 c, 3810 d, has been omitted. In this regard, FIG. 38Broughly corresponds to FIG. 29A.

In either stage 3805, 3810, in some non-limiting examples, an initialconductive coating 830 ₀ may be deposited over the at least onesemiconducting layer(s) 130 a-130 c. In some non-limiting examples, theinitial conductive coating 830 ₀ may be deposited using an open maskand/or mask-free deposition process. In some non-limiting examples, suchdeposition may be effected by exposing the entire exposed layer surface111 of the device 2900 to a vapor flux of the initial conductive coatingmaterial 831, to deposit the initial conductive coating 830 ₀ over theat least one semiconducting layer(s) 130 a-130 c to form a first layerof the at least one second electrode 140.

In the stage 3805 of FIG. 38A, the at least one second electrode 140 inthe first emissive region 1910 a has a first thickness that, in somenon-limiting examples, may be a common thickness t_(c1) in the firstemissive region 1910 a. The first thickness t_(c1) may correspond to athickness of the initial conductive coating 830 ₀.

In the stage 3810 of FIG. 38B, the at least one second electrode 140 maybe a common electrode. The second electrode 140 a has a first thicknesst_(c1) in the first emissive region 1910 a. The first thickness t_(c1)may correspond to a thickness of the initial conductive coating 830 ₀.

In either stage 3805, 3810, in some non-limiting examples, a first CPL3610 a is selectively deposited over first portions of the device 3800,comprising the first emissive region 1910 a.

In either stage 3805, 3810, in some non-limiting examples, a firstconductive coating 830 a may be deposited over the device 3800. In somenon-limiting examples, the first conductive coating 830 a may bedeposited using an open mask and/or mask-free deposition process. Insome non-limiting examples, such deposition may be effected by exposingthe entire exposed layer surface 111 of the device 3800 to a vapour fluxof the first conductive coating material 831, to deposit the firstconductive coating 830 a over the initial conductive coating 830 ₀ thatis substantially devoid of the first CPL 3610 a, and in the case ofstage 3805 of FIG. 38A, of the at least one PDL patterning coating 810,which in some non-limiting examples, comprises the at least one PDL CPLs3810 a, 3810 b, 3810 c, 3810 d.

In either stage 3805, 3810, in some examples, the first conductivecoating 830 a covers the lateral aspects 410 of the second and thirdemissive region 1910 b, 1910 c, such that the first conductive coating830 a forms a second layer of the second electrodes 140 b, 140 c.Additionally, in stage 3810, the first conductive coating 830 a may, insome non-limiting examples, also cover at least part(s) of thenon-emissive region(s) 1920 in which the PDLs 440 a-440 d lie, to form acommon electrode, at least for the second emissive region 1910 b. Suchsecond electrode 140 b has a second thickness t_(c2) in the secondemissive region 1910 b. The second thickness t_(c2) may correspond to acombined thickness of the initial conductive coating 830 ₀ and of thefirst conductive coating 830 a and may in some non-limiting examples begreater than the first thickness t_(c1).

Those having ordinary skill in the relevant art will appreciate that, insome non-limiting examples, where the first CPL 3610 a and/or the atleast one PDL CPL 3810 a, 3810 b, 3810 c, 3810 d do not act as apatterning coating 810, a patterning coating 810 (not shown) may bedisposed where and when appropriate to allow patterning of the firstconductive coating 830 a to be deposited in desired locations, even inthe absence of a FMM.

In FIG. 38C, a stage 3820 of manufacture of the device 3800 is shownthat roughly corresponds to FIG. 29B and assumes that stage 3810 and notstage 3805 has occurred, although those having ordinary skill in therelevant art will appreciate that a corresponding stage could bedescribed based on stage 3805 instead of stage 3810.

In some non-limiting examples, a second CPL 3610 b is selectivelydeposited over further first portions of the device 3800, comprising thesecond emissive region 1910 b.

In some non-limiting examples, a second conductive coating 830 b may bedeposited over the device 3800. In some non-limiting examples, thesecond conductive coating 830 b may be deposited using an open maskand/or mask-free deposition process. In some non-limiting examples, suchdeposition may be effected by exposing the entire exposed layer surface111 of the device 3800 to a vapour flux of a conductive coating material831, to deposit the second conductive coating 830 b over the firstconductive coating 830 a that is substantially devoid of either thefirst CPL 3610 a or the second CPL 3610 b (and/or the at least onepatterning coating 810, which in some non-limiting examples may comprisethe at least one PDL CPL 3810 a, 3810 b, 3810 c, 3810 d), in someexamples, the third emissive region 1910 c and/or in some non-limitingexamples, at least part(s) of the non-emissive region 1920 in which thePDLs 440 a-440 d lie, such that the second conductive coating 830 b isdeposited on the further second portion(s) of the first conductivecoating 830 a that are substantially devoid of the second CPL 3610 b(and/or the at least one patterning coating 810, which in somenon-limiting examples may comprise the at least one PDL CPL 3810 a, 3810b, 3810 c, 3810 d) to form a third layer of the second electrode 140 c.

Such second electrode 140 c has a third thickness t_(c3) in the thirdemissive region 1910 c. The third thickness t_(c3) may correspond to acombined thickness of the initial conductive coating 830 ₀, the firstconductive coating 830 a and the second conductive coating 830 b and mayin some non-limiting examples be greater than either or both of thefirst thickness t_(c1) and the second thickness t_(c2).

Those having ordinary skill in the relevant art will appreciate that, insome non-limiting examples, where the first CPL 3610 a, the second CPL3610 b, and/or the at least one PDL CPL 3810 a, 3810 b, 3810 c, 3810 ddo not act as a patterning coating 810, a patterning coating 810 (notshown) may be disposed where and when appropriate to allow patterning ofthe third conductive coating 830 c to be deposited in desired locations,even in the absence of a FMM.

In FIG. 38D, a stage 3830 of manufacture of the device 3800 is shownthat roughly corresponds to FIG. 29C and assumes that stage 3810 and notstage 3805 has occurred, although those having ordinary skill in therelevant art will appreciate that a corresponding stage could bedescribed based on stage 3805 instead of stage 3810.

In some non-limiting examples, a third CPL 3810 c is selectivelydeposited over additional first portions of the device 3800, comprisingthe third emissive region 1910 b.

In FIG. 38E, a stage 3840 of manufacture of the device 3800 is shownthat roughly corresponds to FIG. 29D and assumes that stage 3810 and not3805 has occurred, although those having ordinary skill in the relevantart will appreciate that a corresponding stage could be described basedon stage 3805 instead of stage 3810.

In some non-limiting examples, at least one auxiliary electrode 1750 isdisposed in the non-emissive region(s) 1920 a, 1920 b, 1920 c, 1920 d ofthe device 3800 between neighbouring emissive region 1910 a, 1910 b,1910 c thereof and in some non-limiting examples, over the PDLs 440 a,440 b, 440 c, 440 d. In some non-limiting examples, a conductive coatingmaterial 831 used to deposit the at least one auxiliary electrode 1750may be deposited using an open mask and/or mask-free deposition process.In some non-limiting examples, such deposition may be effected byexposing the entire exposed layer surface 111 of the device 3800 to avapour flux of the conductive coating material 831, to deposit theconductive coating material 831 over the exposed parts of the initialconductive coating 830 ₀, the first conductive coating 830 a and thesecond conductive coating 830 b that is substantially devoid of any ofthe first CPL 3610 a, the second CPL 3610 b and/or the third CPL 3610 c(and/or the at least one patterning coating 810, which in somenon-limiting examples may comprise the at least one PDL CPL 3810 a, 3810b, 3810 c, 3810 d), such that the conductive coating material 831 isdeposited on an additional second portion comprising the exposed part(s)of the initial conductive coating 830 ₀, the first conductive coating830 a and/or the second conductive coating 830 b that are substantiallydevoid of any of the first CPL 3610 a, the second CPL 3610 b and/or thethird CPL 3610 c (and/or the at least one patterning coating 810, whichin some non-limiting examples may comprise the at least one PDL CPL 3810a, 3810 b, 3810 c, 3810 d) to form the at least one auxiliary electrode1750. Each of the at least one auxiliary electrodes 1750 is electricallycoupled to a respective one of the second electrodes 140 a-140 c. Insome non-limiting examples, each of the at least one auxiliaryelectrodes 1750 is in physical contact with such second electrode 140a-140 c.

In some non-limiting examples, the first emissive region 1910 a, thesecond emissive region 1910 b and the third emissive region 1910 c maybe substantially devoid of the conductive coating material 831 used toform the at least one auxiliary electrode 1750.

In some non-limiting examples, at least one of the initial conductivecoating 830 ₀, the first conductive coating 830 a and/or the secondconductive coating 830 b may be transmissive and/or substantiallytransparent in at least a part of the visible wavelength range of theelectromagnetic spectrum. Thus, the first conductive coating 830 aand/or the second conductive coating 830 b (and/or any additionalconductive coating(s) 830) is disposed on top of the initial conductivecoating 830 ₀ to form a multi-coating electrode 120, 140, 1750 that mayalso be transmissive and/or substantially transparent in at least a partof the visible wavelength range of the electromagnetic spectrum. In somenon-limiting examples, the transmittance of any one or more of theinitial conductive coating 830 ₀, the first conductive coating 830 a,the second conductive coating 830 b, any additional conductivecoating(s) 830, and/or the multi-coating electrode 120, 140, 1750 may begreater than about 30%, greater than about 40% greater than about 45%,greater than about 50%, greater than about 60%, greater than about 70%,greater than about 75%, and/or greater than about 80% in at least a partof the visible wavelength range of the electromagnetic spectrum.

In some non-limiting examples, a thickness of the initial conductivecoating 830 ₀, the first conductive coating 830 a and/or the secondconductive coating 830 b may be made relatively thin to maintain arelatively high transmittance. In some non-limiting examples, thethickness of the initial conductive coating 830 ₀ may be about 5 to 30nm, about 8 to 25 nm, and/or about 10 to 20 nm. In some non-limitingexamples, the thickness of the first conductive coating 830 a may beabout 1 to 25 nm, about 1 to 20 nm, about 1 to 15 nm, about 1 to 10 nm,and/or about 3 to 6 nm. In some non-limiting examples, the thickness ofthe second conductive coating 830 b may be about 1 to 25 nm, about 1 to20 nm, about 1 to 15 nm, about 1 to 10 nm, and/or about 3 to 6 nm. Insome non-limiting examples, the thickness of a multi-coating electrodeformed by a combination of the initial conductive coating 830 ₀, thefirst conductive coating 830 a, the second conductive coating 830 band/or any additional conductive coating(s) 830 may be about 6 to 35 nm,about 10 to 30 nm, about 10 to 25 nm and/or about 12 to 18 nm.

In some non-limiting examples, a thickness of the at least one auxiliaryelectrode 1750 may be greater than the thickness of the initialconductive coating 830 ₀, the first conductive coating 830 a, the secondconductive coating 830 b, and/or a common electrode. In somenon-limiting examples, the thickness of the at least one auxiliaryelectrode 1750 may be greater than about 50 nm, greater than about 80nm, greater than about 100 nm, greater than about 150 nm, greater thanabout 200 nm, greater than about 300 nm, greater than about 400 nm,greater than about 500 nm, greater than about 700 nm, greater than about800 nm, greater than about 1 μm, greater than about 1.2 μm, greater thanabout 1.5 μm, greater than about 2 μm, greater than about 2.5 μm, and/orgreater than about 3 μm.

In some non-limiting examples, the at least one auxiliary electrode 1750may be substantially non-transparent and/or opaque. However, since theat least one auxiliary electrode 1750 may be in some non-limitingexamples provided in a non-emissive region 1920 of the device 2900, theat least one auxiliary electrode 1750 may not cause or contribute tosignificant optical interference. In some non-limiting examples, thetransmittance of the at least one auxiliary electrode 1750 may be lessthan about 50%, less than about 70%, less than about 80%, less thanabout 85%, less than about 90%, and/or less than about 95% in at least apart of the visible wavelength range of the electromagnetic spectrum.

In some non-limiting examples, the at least one auxiliary electrode 1750may absorb light in at least a part of the visible wavelength range ofthe electromagnetic spectrum.

In some non-limiting examples, at least one optical property, includingwithout limitation, a thickness, a composition, a total optical pathlength, and/or a refractive index, of the first CPL 3610 a, the secondCPL 3610 b, and/or the third CPL 3610 c disposed in the first emissiveregion 1910 a, the second emissive region 1910 b and/or the thirdemissive region 1910 c respectively (and/or the at least one patterningcoating 810, which in some non-limiting examples may comprise the atleast one PDL CPL 3810 a, 3810 b, 3810 c, 3810 d disposed in thenon-emissive regions 1920 a, 1920 b, 1920 c, 1920 d) may be variedaccording to a colour and/or emission spectrum of light emitted by eachemissive region 1910 a-1910 c. As shown in FIGS. 38D-38E, the first CPL3610 a may have a first CPL thickness t₁, the second CPL 3610 b may havea second CPL thickness t_(n2) and/or the third CPL 3610 c may have athird CPL thickness t_(n3). In some non-limiting examples, the first CPLthickness t_(n1) may be the same as, greater than, and/or less than, thesecond CPL thickness t_(n2). In some non-limiting examples, the firstCPL thickness t_(n1) may be the same as, greater than, and/or less than,the third CPL thickness t_(n3). In some non-limiting examples, thesecond CPL thickness t_(n2) may be the same as, greater than, and/orless than, the third CPL thickness t_(n3).

In some non-limiting examples, it may be advantageous to vary the firstCPL thickness t_(n1), the second CPL thickness t_(n2), and/or the thirdCPL thickness t_(n3) deposited over, respectively, the first emissiveregion 1910 a, the second emissive region 1910 b, and/or the thirdemissive region 1910 c, especially, where the first CPL 3610 a, thesecond CPL 3610 b, and/or the third CPL 3610 c act as a patterningcoating 810.

By adjusting the first CPL thickness t_(n1), the second CPL thicknesst_(n2), and/or the third CPL thickness t_(n3) deposited over,respectively, the first emissive region 1910 a, the second emissiveregion 1910 b, and/or the third emissive region 1910 c, in addition tothe first thickness t_(c1), the second thickness t_(c2), and/or thethird thickness t_(c3) of, respectively, the second electrode 140 a inthe first emissive region 1910 a, the second electrode 140 b in thesecond emissive region 1910 b, and/or the second electrode 140 c in thethird emissive region 1910 c, optical microcavity effects of,respectively, the first emissive region 1910 a, the second emissiveregion 1910 b, and/or the third emissive region 1910 c may be modulatedon a sub-pixel to sub-pixel basis. By way of non-limiting example, athickness of a CPL 3610 a, 3610 b, 3610 c disposed over a B(lue)sub-pixel 2643 may be less than a thickness of a CPL 3610 a, 3610 b,3610 c disposed over a G(reen) sub-pixel 2642. By way of non-limitingexamples, a thickness of a CPL 3610 a, 3610 b, 3610 c disposed over aG(reen) sub-pixel 2642 may be less than a thickness of a CPL 3610 a,3610 b, 3610 c disposed over a R(ed) sub-pixel 2641.

Those having ordinary skill in the relevant art will appreciate thatoptical microcavity effects of, respectively, the first emissive region1910 a, the second emissive region 1910 b, and/or the third emissiveregion 1910 c, may be controlled to an even greater extent by modulatingat least one optical property, including without limitation, athickness, a composition, a total optical path length, and/or arefractive index, of the initial conductive coating 830 ₀, the firstconductive coating 830 a, and/or the second conductive coating 830 b, inorder to modulate at least one optical property, including withoutlimitation, a a thickness, a composition, a total optical path length,and/or a refractive index, of the second electrode 140 a, 140 b, 140 cof one emissive region 1910 a, 1910 b, 1910 c of a given sub-pixel 264 xrelative to the at least one optical property, including withoutlimitation, a thickness, a composition, a total optical path length,and/or a refractive index, of the second electrode 140 a, 140 b, 140 cof another emissive region 1910 a, 1910 b, 1910 c of another sub-pixel264 x, in addition to modulating at least one optical property,including without limitation, a thickness, a composition, a totaloptical path length, and/or a refractive index, of a CPL 3610 a, 3610 b,3610 c of the one emissive region 1910 a, 1910 b, 1910 c of the givensub-pixel 264 x relative to at least one optical property, includingwithout limitation, a a thickness, a composition, a total optical pathlength, and/or a refractive index, of a CPL 3610 a, 3610 b, 3610 c ofthe other emissive region 1910 a, 1910 b, 1910 c of the other sub-pixel264 x.

In some non-limiting examples, the device 3800 may also comprise anynumber of emissive regions 1910 a-1910 c and/or (sub-) pixel(s) 340/264x thereof. In some non-limiting examples, a device may comprise aplurality of pixels 340, wherein each pixel 340 comprises two, three ormore sub-pixel(s) 264 x.

Those having ordinary skill in the relevant art will appreciate that thespecific arrangement of (sub-) pixel(s) 340/264 x may be varieddepending on the device design. In some non-limiting examples, thesub-pixel(s) 264 x may be arranged according to known arrangementschemes, including without limitation, RGB side-by-side, diamond and/orPenTile®.

Turning now to FIG. 38F, a stage 3835 of manufacture of the device 3800is shown that assumes that stage 3830 has just occurred.

After stage 3835, a further layer, including without limitation, afurther CPL 3850, a TFE, and/or a glass cap, may be deposited over thedevice 3800. In some non-limiting examples, the CPL 3850 may bedeposited using an open mask and/or mask-free deposition process. Insome non-limiting examples, such deposition may be effected by exposingthe entire exposed layer surface 111 of the device 3800 to a vapour fluxof a CPL material to deposit the CPL 3850 across substantially all ofthe exposed layer surface 111 of the device 3800.

In some non-limiting examples, the CPL 3850 is similar to conventionalCPLs that comprises a layer, typically formed of a common CPL materialand in some non-limiting examples, having a substantially commonthickness, that extends across substantially all of the lateral aspectof the device 100, including without limitation, across all emissiveregions 1910 therein.

In some non-limiting examples, the CPL material for depositing the CPL3850 may be the same and/or different from: the CPL material fordepositing the first CPL 3810 a, the CPL material for depositing thesecond CPL 3810 b, the CPL material for depositing the third CPL 3810 cand/or the CPL material for depositing the at least one PDL CPL 3810 a,3810 b, 3810 c, and/or 3810 d.

In some non-limiting examples, the CPL 3850 may additionally act as apatterning coating 810, in that it exhibits a relatively low initialsticking coefficient for a further conductive coating material 831 (notshown) relative to the exposed layer surface 111 of the underlyingsurface, and be selectively deposited over first portions of the exposedlayer surface 111 of such underlying surface in the example device 3800,to inhibit deposition of a further conductive coating material 831thereon.

In some non-limiting examples, there may be a scenario in which it iscontemplated to deposit a conductive coating 830 having specificmaterial properties onto an exposed layer surface 111 of a substrate 110on which such conductive coating 830 is not readily deposited. By way ofnon-limiting example, pure and/or substantially pure Mg is not typicallyreadily deposited onto an organic surface since there is a low stickingcoefficient of Mg on various organic surfaces. Accordingly, in somenon-limiting examples, an exposed layer surface 111 on which the initialconductive coating 830 ₀, the first conductive coating 830 a, the secondconductive coating 830 b, and/or the at least one auxiliary electrode1750 is to be deposited may be treated, prior to deposition of theconductive coating material 831 to form the initial conductive coating830 ₀, the first conductive coating 830 a, the second conductive coating830 b, and/or the at least one auxiliary electrode 1750, by depositing apatterning coating 1120, which in some non-limiting examples, may be anNPC 1120.

In some non-limiting examples, deposition of a patterning coating 1120for facilitating deposition of a conductive coating material 831 for aconducting coating 830, including without limitation, at least one ofthe initial conductive coating 830 ₀, the first conductive coating 830a, the second conductive coating 830 b, and/or the at least oneauxiliary electrode 1750, may occur before and/or after, respectively, aprior deposition of a PDL 3610, including without limitation, the atleast one PDL CPL 3810 a, 3810 b, 3810 c, 3810 d, the first CPL 3610 a,the second CPL 3610 b, and/or the third CPL 3610 c.

In some non-limiting examples, such a patterning coating 1120 maydeposited over portions of an underlying exposed layer surface 111 of,without limitation, the substrate 110, the at least one semiconductinglayer 130, the at least one PDL 440 a, 440 b, 440 c, 440 d, the initialconductive coating 830 ₀, the first conductive coating 830 a, and/or thesecond conductive coating 830 b, that is substantially devoid of a CPL3610, including without limitation, the at least one PDL CPL 3810 a,3810 b, 3810 c, 3810 d, the first CPL 3610 a, the second CPL 3610 b,and/or the third CPL 3610 c.

In some non-limiting examples, such a patterning coating 1120 may bedeposited at an interface between a CPL 3610, including withoutlimitation, the first CPL 3610 a, the second CPL 3610 b, and/or thethird CPL 3610 c, and an underlying conductive coating 830, includingwithout limitation, the first conductive coating 830 a, the secondconductive coating 830 b, and/or the third conductive coating 830 c.

In FIGS. 38A-38F, the CPLs 3610 are shown as extending substantiallyonly across the lateral extent 410 of one emissive region 1910. Such aconfiguration permits one or more conductive coatings 830 to bedeposited in regions that, at the time of deposition, are substantiallydevoid of a CPL 3610, resulting in a patterned deposition of theconductive coating 830, without employing an FMM. In some non-limitingexamples, again as shown in FIGS. 38A-38F, the deposition of asubsequent CPL 3610 in turn is deposited across the lateral extent 410of a different emissive region 1910 from that of a previous CPL 3610,such that the CPL 3610 layers do not overlap.

Such configuration is shown in a simplified example diagram in FIG. 39A.

A first CPL 3610 a is deposited on the exposed layer surface 111 of anunderlying material, which may, in some non-limiting examples, be aninitial conductive coating 830 ₀, (substantially only) across thelateral extent 410 of a first emissive region 1910 a.

A first conductive coating 830 a is deposited, subsequent to thedeposition of the first CPL 3610 a, and patterned thereby, on the restof the exposed layer surface 111 of the initial conductive coating 830₀.

A second CPL 3610 b is deposited on the exposed layer surface 111 of thefirst conductive coating 830 a (substantially only) across the lateralextent 410 of a second emissive region 1910 b.

A second conductive coating 830 b is deposited, subsequent to thedeposition of the second CPL 3610 b, and patterned thereby, on the restof the exposed layer surface 111 of the first conductive coating 830 a.

A third CPL 3610 c is deposited on the exposed layer surface 111 of thesecond conductive coating 830 b (substantially only) across the lateralextent 410 of a third emissive region 1910 c.

A third conductive coating 830 c is deposited, subsequent to thedeposition of the third CPL 3610 c, and patterned thereby, on theexposed layer surface 111 of the second conductive coating 830 b.

A fourth CPL 3610 d is deposited on the exposed layer surface 111 of thethird conductive coating 830 c (substantially only) across the lateralextent 410 of a fourth emissive region 1910 d.

A fourth conductive coating 830 d is deposited, subsequent to thedeposition of the fourth CPL 3610 d, and patterned thereby, on theexposed layer surface 111 of the third conductive coating 830 c.

Thus, each of the non-emissive regions 1920 a, 1920 b, 1930 c extendingrespectively, between the first emissive region 1910 a and the secondemissive region 1910 b, the second emissive region 1910 b and the thirdemissive region 1910 c, and the third emissive region 1910 c and thefourth emissive region 1910 d, are shown with five layers of conductivecoating 830 thereon, comprising the initial conductive coating 830 ₀,the first conductive coating 830 a, the second conductive coating 830 b,the third conductive coating 830 c, and the fourth conductive coating830 d, while each of the fourth emissive region 1910 d, the thirdemissive region 1910 c, the second emissive region 1910 b, and the firstemissive region 1910 a each have progressively fewer layers ofconductive coating 830, the uppermost of which is covered by a singleCPL 3610.

Those having ordinary skill in the relevant art will appreciate thatother configurations involving the deposition of CPLs 3610 may also beemployed. By way of non-limiting example, in some non-limiting examples,a subsequent CPL 3610 may be deposited over, and fully overlap, aprevious CPL 3610 across the lateral extent 410 of the correspondingemissive region, as well as across the lateral extent 410 of asubsequent emissive region 1910, and, in some non-limiting examples,over at least a part of the lateral extent 420 of a non-emissive region1920 extending therebetween.

Such configuration is shown in a simplified example diagram in FIG. 39B.

A first CPL 3610 a is deposited on the exposed layer surface 111 of anunderlying material, which may, in some non-limiting examples be aninitial conductive coating 830 ₀, (substantially only) across thelateral extent 410 of a first emissive region 1910 a.

A first conductive coating 830 a is deposited, subsequent to thedeposition of the first CPL 3610 a, and patterned thereby, on the restof the exposed layer surface 111 of the first conductive coating 830 a.

A second CPL 3610 b is deposited on the exposed layer surface 111 of thefirst conductive coating 830 a across the lateral extent 410 of a secondemissive region 1910 b. However, in addition, the second CPL 3610 b isdeposited on the exposed layer surface 111 of the first conductivecoating 830 a across (at least a part of) the lateral extent 420 of afirst non-emissive region 1920 a extending between the first emissiveregion 1910 a and the second emissive region 1910 b, as well as on theexposed layer surface 111 of the first CPL 3610 a.

A second conductive coating 830 b is deposited, subsequent to thedeposition of the second CPL 3610 b, and patterned thereby, on the restof the exposed layer surface 111 of the first conductive coating 830 a.

A third CPL 3610 c is deposited on the exposed layer surface 111 of thesecond conductive coating 830 b across the lateral extent of a thirdemissive region 1910 c. However, in addition, the third CPL 3610 c isdeposited on the exposed layer surface 111 of the second conductivecoating 830 b across (at least a part of) the lateral extent 420 of asecond non-emissive region 1920 b extending between the second emissiveregion 1910 b and the third emissive region 1910 c, as well as on theexposed layer surface 111 of the second CPL 3610 b, which extends acrossthe lateral extent 410 of the first emissive region 1910 a, the secondemissive region 1910 b, and the lateral extent 420 of the firstnon-emissive region 1920 a therebetween.

A third conductive coating 830 c is deposited, subsequent to thedeposition of the third CPL 3910 c, and patterned thereby, on the restof the exposed layer surface 111 of the second conductive coating 830 b.

A fourth CPL 3610 d is deposited on the exposed layer surface 111 of thethird conductive coating 830 c across the lateral extent of a fourthemissive region 1910 d. However, in addition, the fourth CPL 3610 d isdeposited on the exposed layer surface 111 of the third conductivecoating 830 c across (at least a part of) the lateral extent 420 of athird non-emissive region 1920 c extending between the third emissiveregion 1910 c and the fourth emissive region 1910 d, as well as on theexposed layer surface 111 of the third CPL 3610 c, which extends acrossthe lateral extent 410 of the first emissive region 1910, the secondemissive region 1910 b, and the lateral extent 420 of the firstnon-emissive region 1920 a between the first emissive region 1910 a andthe second emissive region 1910 b and of the second non-emissive region1920 b between the second emissive region 1910 b and the third emissiveregion 19

Thus, each of the fourth emissive region 1910 d, the third emissiveregion 1910 c, the second emissive region, and the first emissive region1910 a, as well as the third non-emissive region 1920 c, the secondnon-emissive region 1920 b, and the first non-emissive region 1920 a,have progressively fewer layers of conductive coating 830, the uppermostof which is covered by a progressively larger number of layers of CPL3610, so that each region has the same number of layers thereon, whetherof a conductive coating 830 or of a CPL 3610.

In some non-limiting examples, a subsequent CPL 3610 may be depositedover, but only partially overlap, a previous CPL 3610. In somenon-limiting examples, each CPL 3610 may extend across the lateralextent 410 of a plurality of emissive regions 1910, and the lateralaspect 420 of at least one non-emissive region 1920 therebetween.

Such configuration is shown in a simplified example diagram in FIG. 39C.

A first CPL 3610 a is deposited on the exposed layer surface 111 of anunderlying material, which may, in some non-limiting examples, be aninitial conductive coating 830 ₀, across, and in some non-limitingexamples, extending beyond the lateral extent 410 of a first emissiveregion 1910 a. In the example shown, the first CPL 3610 a extends acrossthe lateral extent 410 of both the first emissive region 1910 a and of asecond emissive region 1910 b, as well as the lateral extent 420 of afirst non-emissive region 1920 a therebetween.

A first conductive coating 830 a is deposited, subsequent to thedeposition of the first CPL 3610 a, and patterned thereby, on the restof the exposed layer surface 111 of the initial conductive coating 830₀.

A second CPL 3610 b is deposited on the exposed layer surface 111 of apart of both the first conductive coating 830 a and the first CPL 3610a, across, and in some non-limiting examples, extending beyond thelateral extent 410 of the second emissive region 1910 b. In the exampleshown, the second CPL 3610 b extends across the lateral extent 410 ofboth the second emissive region 1910 b and of a third emissive region1910 c, as well as the lateral extent 420 of a second non-emissiveregion 1920 b therebetween.

A second conductive coating 830 c is deposited, subsequent to thedeposition of the second CPL 3610 b, and patterned thereby, on the restof the exposed layer surface 111 of the first conductive coating 830 a.

A third CPL 3610 c is deposited on the exposed layer surface 111 of apart of both the second conductive coating 830 b and the second CPL 3610b, across, and in some non-limiting examples, extending beyond thelateral extent 410 of the third emissive region 1910 c. In the exampleshown, the third CPL 3610 c extends across the lateral extent 410 ofboth the third emissive region 1910 c and of a fourth emissive region1910 d, as well as the lateral extent 420 of a third non-emissive region1920 c therebetween.

Thus, some of the emissive regions 1910, including without limitation,the second emissive region 1910 b and the third emissive region 1910 ceach have a plurality of layers of CPL 3610 covering a progressivelylarger number of layers of conductive coating 830.

NPCs

Without wishing to be bound by a particular theory, it is postulatedthat providing an NPC 1120 may facilitate deposition of the conductivecoating 830 onto certain surfaces.

Non-limiting examples of suitable materials for forming an NPC 1120include without limitation, at least one of metals, including withoutlimitation, alkali metals, alkaline earth metals, transition metalsand/or post-transition metals, metal fluorides, metal oxides and/orfullerene.

In the present disclosure, the term “fullerene” may refer generally to amaterial including carbon molecules. Non-limiting examples of fullerenemolecules include carbon cage molecules, including without limitation, athree-dimensional skeleton that includes multiple carbon atoms that forma closed shell and which may be, without limitation, spherical and/orsemi-spherical in shape. In some non-limiting examples, a fullerenemolecule can be designated as C_(n), where n is an integer correspondingto a number of carbon atoms included in a carbon skeleton of thefullerene molecule. Non-limiting examples of fullerene molecules includeC_(n), where n is in the range of 50 to 250, such as, withoutlimitation, C₇₀, C₇₀, C₇₂, C₇₄, C₇₆, C₇₈, C₈₀, C₈₂, and C₈₄. Additionalnon-limiting examples of fullerene molecules include carbon molecules ina tube and/or a cylindrical shape, including without limitation,single-walled carbon nanotubes and/or multi-walled carbon nanotubes.

Non-limiting examples of such materials include Ca, Ag, Mg, Yb, ITO,IZO, ZnO, ytterbium fluoride (YbF₃), magnesium fluoride (MgF₂) and/orcesium fluoride (CsF).

Based on findings and experimental observations, it is postulated thatnucleation promoting materials, including without limitation,fullerenes, metals, including without limitation, Ag and/or Yb, and/ormetal oxides, including without limitation, ITO and/or IZO, as discussedfurther herein, may act as nucleation sites for the deposition of aconductive coating 830, including without limitation Mg.

In some non-limiting examples, the NPC 1120 may be provided by a part ofthe at least one semiconducting layer 130. By way of non-limitingexample, a material for forming the EIL 139 may be deposited using anopen mask and/or mask-free deposition process to result in deposition ofsuch material in both an emissive region 1910 and/or a non-emissiveregion 1920 of the device 100. In some non-limiting examples, a part ofthe at least one semiconducting layer 130, including without limitationthe EIL 139, may be deposited to coat one or more surfaces in thesheltered region 3065. Non-limiting examples of such materials forforming the EIL 139 include at least one or more of alkali metals,including without limitation, Li, alkaline earth metals, fluorides ofalkaline earth metals, including without limitation, MgF₂, fullerene,Yb, YbF₃, and/or CsF.

In some non-limiting examples, the NPC 1120 may be provided by thesecond electrode 140 and/or a portion, layer and/or material thereof. Insome non-limiting examples, the second electrode 140 may extendlaterally to cover the layer surface 3111 arranged in the shelteredregion 3065. In some non-limiting examples, the second electrode 140 maycomprise a lower layer thereof and a second layer thereof, wherein thesecond layer thereof is deposited on the lower layer thereof. In somenon-limiting examples, the lower layer of the second electrode 140 maycomprise an oxide such as, without limitation, ITO, IZo and/or ZnO., Insome non-limiting examples, the upper layer of the second electrode 140may comprise a metal such as, without limitation, at least one of Ag,Mg, Mg:Ag, Yb/Ag, other alkali metals and/or other alkali earth metals.

In some non-limiting examples, the lower layer of the second electrode140 may extend laterally to cover a surface of the sheltered region3065, such that it forms the NPC 1120. In some non-limiting examples,one or more surfaces defining the sheltered region 3065 may be treatedto form the NPC 1120. In some non-limiting examples, such NPC 1120 maybe formed by chemical and/or physical treatment, including withoutlimitation, subjecting the surface(s) of the sheltered region 3065 to aplasma, UV and/or UV-ozone treatment.

Without wishing to be bound to any particular theory, it is postulatedthat such treatment may chemically and/or physically alter suchsurface(s) to modify at least one property thereof. By way ofnon-limiting example, such treatment of the surface(s) may increase aconcentration of C—O and/or C—OH bonds on such surface(s), increase aroughness of such surface(s) and/or increase a concentration of certainspecies and/or functional groups, including without limitation,halogens, nitrogen-containing functional groups and/or oxygen-containingfunctional groups to thereafter act as an NPC 1120.

In some non-limiting examples, the partition 3221 includes and/or ifformed by an NPC 1120. By way of non-limiting examples, the auxiliaryelectrode 1750 may act as an NPC 1120.

In some non-limiting examples, suitable materials for use to form an NPC1120, may include those exhibiting or characterized as having an initialsticking probability S₀ for a material of a conductive coating 830 of atleast about 0.4 (or 40%), at least about 0.5, at least about 0.6, atleast about 0.7, at least about 0.75, at least about 0.8, at least about0.9, at least about 0.93, at least about 0.95, at least about 0.98,and/or at least about 0.99.

By way of non-limiting example, in scenarios where Mg is deposited usingwithout limitation, an evaporation process on a fullerene-treatedsurface, in some non-limiting examples, the fullerene molecules may actas nucleation sites that may promote formation of stable nuclei for Mgdeposition.

In some non-limiting examples, less than a monolayer of an NPC 1120,including without limitation, fullerene, may be provided on the treatedsurface to act as nucleation sites for deposition of Mg.

In some non-limiting examples, treating a surface by depositing severalmonolayers of an NPC 1120 thereon may result in a higher number ofnucleation sites and accordingly, a higher initial sticking probabilityS₀.

Those having ordinary skill in the relevant art will appreciate than anamount of material, including without limitation, fullerene, depositedon a surface, may be more, or less than one monolayer. By way ofnon-limiting example, such surface may be treated by depositing 0.1monolayer, 1 monolayer, 10 monolayers, or more of a nucleation promotingmaterial and/or a nucleation inhibiting material.

In some non-limiting examples, a thickness of the NPC 1120 deposited onan exposed layer surface 111 of underlying material(s) may be betweenabout 1 nm and about 5 nm and/or between about 1 nm and about 3 nm.

While the present disclosure discusses thin film formation, in referenceto at least one layer and/or coating, in terms of vapor deposition,those having ordinary skill in the relevant art will appreciate that, insome non-limiting examples, various components of theelectro-luminescent device 100 may be deposited using a wide variety oftechniques, including without limitation, evaporation (including withoutlimitation, thermal evaporation and/or electron beam evaporation),photolithography, printing (including without limitation, inkjet and/orvapor jet printing, reel-to-reel printing and/or micro-contact transferprinting), PVD (including without limitation, sputtering), CVD(including without limitation, PECVD and/or OVPD), laser annealing, LITIpatterning, ALD, coating (including without limitation, spin coating,dip coating, line coating and/or spray coating), and/or combinations ofany two or more thereof. Such processes may be used in combination witha shadow mask to achieve various patterns.

NICs

Without wishing to be bound by a particular theory, it is postulatedthat, during thin film nucleation and growth at and/or near an interfacebetween the exposed layer surface 111 of the substrate 110 and the NIC810, a relatively high contact angle θ_(c) between the edge of the filmand the substrate 110 be observed due to “dewetting” of the solidsurface of the thin film by the NIC 810. Such dewetting property may bedriven by minimization of surface energy between the substrate 110, thinfilm, vapor 7 and the NIC 810 layer. Accordingly, it may be postulatedthat the presence of the NIC 810 and the properties thereof may have, insome non-limiting examples, an effect on nuclei formation and a growthmode of the edge of the conductive coating 830.

Without wishing to be bound by a particular theory, it is postulatedthat, in some non-limiting examples, the contact angle θ_(c) of theconductive coating 830 may be determined, based at least partially onthe properties (including, without limitation, initial stickingprobability S₀) of the NIC 810 disposed adjacent to the area onto whichthe conductive coating 830 is formed. Accordingly, NIC 810 material thatallow selective deposition of conductive coatings 830 exhibitingrelatively high contact angles θ_(c) may provide some benefit.

Without wishing to be bound by a particular theory, it is postulatedthat, in some non-limiting examples, the relationship between variousinterfacial tensions present during nucleation and growth may bedictated according to Young's equation in capillarity theory:

γ_(sv)=γ_(fs)+γ_(Vf) cos θ

wherein γ_(sv) corresponds to the interfacial tension between substrate110 and vapor, γ_(fs) corresponds to the interfacial tension between thethin film and the substrate 110, γ_(vf) corresponds to the interfacialtension between the vapor and the film, and θ is the film nucleuscontact angle. FIG. 40 illustrates the relationship between the variousparameters represented in this equation.

On the basis of Young's equation, it may be derived that, for islandgrowth, the film nucleus contact angle θ is greater than 0 and thereforeγ_(sv)<γ_(fs)+γ_(vf).

For layer growth, where the deposited film “wets” the substrate 110, thenucleus contact angle θ=0, and therefore γ_(sv)=γ_(fs)+γ_(vf).

For Stranski-Krastanov (S-K) growth, where the strain energy per unitarea of the film overgrowth is large with respect to the interfacialtension between the vapor and the film, γ_(sv)>γ_(fs)+γ_(vf).

It may be postulated that the nucleation and growth mode of theconductive coating 830 at an interface between the NIC 810 and theexposed layer surface 111 of the substrate 110 may follow the islandgrowth model, where θ>0. Particularly in cases where the NIC 810exhibits a relatively low affinity and/or low initial stickingprobability S₀ (i.e. dewetting) towards the material used to form theconductive coating 830, resulting in a relatively high thin film contactangle of the conductive coating 830. On the contrary, when a conductivecoating 830 is selectively deposited on a surface without the use of anNIC 810, by way of non-limiting example, by employing a shadow mask, thenucleation and growth mode of the conductive coating 830 may differ. Inparticular, it has been observed that the conductive coating 830 formedusing a shadow mask patterning process may, at least in somenon-limiting examples, exhibit relatively low thin film contact angle ofless than about 10°.

Those having ordinary skill in the relevant art will appreciate that,while not explicitly illustrated, a material used to form the NIC 810may also be present to some extent at an interface between theconductive coating 830 and an underlying surface (including withoutlimitation, a surface of a NPC 1120 layer and/or the substrate 110).Such material may be deposited as a result of a shadowing effect, inwhich a deposited pattern is not identical to a pattern of a mask andmay, in some non-limiting examples, result in some evaporated materialbeing deposited on a masked part of a target surface 111. By way ofnon-limiting examples, such material may form as islands and/ordisconnected clusters, and/or as a thin film having a thickness that maybe substantially less than an average thickness of the NIC 810.

In some non-limiting examples, it may be desirable for the activationenergy for desorption (E_(des) 631) to be less than about 2 times thethermal energy (k_(B)T), less than about 1.5 times the thermal energy(k_(B)T), less than about 1.3 times the thermal energy (k_(B)T), lessthan about 1.2 times the thermal energy (k_(B)T), less than the thermalenergy (k_(B)T), less than about 0.8 times the thermal energy (k_(B)T),and/or less than about 0.5 times the thermal energy (k_(B)T). In somenon-limiting examples, it may be desirable for the activation energy forsurface diffusion (E_(s) 621) to be greater than the thermal energy(k_(B)T), greater than about 1.5 times the thermal energy (k_(B)T),greater than about 1.8 times the thermal energy (k_(B)T), greater thanabout 2 times the thermal energy (k_(B)T), greater than about 3 timesthe thermal energy (k_(B)T), greater than about 5 times the thermalenergy (k_(B)T), greater than about 7 times the thermal energy (k_(B)T),and/or greater than about 10 times the thermal energy (k_(B)T).

In some non-limiting examples, suitable materials for use to form an NIC810, may include those exhibiting and/or characterized as having aninitial sticking probability S₀ for a material of a conductive coating830 of no greater than and/or less than about 0.3 (or 30%), no greaterthan and/or less than about 0.2, no greater than and/or less than about0.1, no greater than and/or less than about 0.05, no greater than and/orless than 0.03, no greater than and/or less than 0.02, no greater thanand/or less than 0.01, no greater than and/or less than about 0.08, nogreater than and/or less than about 0.005, no greater than and/or lessthat about 0.003, no greater than and/or less than about 0.001, nogreater than and/or less than about 0.0008, no greater than and/or lessthan about 0.0005, and/or no greater than and/or less than about 0.0001.

In some non-limiting examples, suitable materials for use to form an NIC810 include those exhibiting and/or characterized has having initialsticking probability S₀ for a material of a conductive coating 830 ofbetween about 0.03 and about 0.0001, between about 0.03 and about0.0003, between about 0.03 and about 0.0005, between about 0.03 andabout 0.0008, between about 0.03 and about 0.001, between about 0.03 andabout 0.005, between about 0.03 and about 0.008, between about 0.03 andabout 0.01, between about 0.02 and about 0.0001, between about 0.02 andabout 0.0003, between about 0.02 and about 0.0005, between about 0.02and about 0.0008, between about 0.02 and about 0.0005, between about0.02 and about 0.0008, between about 0.02 and about 0.001, between about0.02 and about 0.005, between about 0.02 and about 0.008, between about0.02 and about 0.01, between about 0.01 and about 0.0001, between about0.01 and about 0.0003, between about 0.01 and about 0.0005, betweenabout 0.01 and about 0.0008, between about 0.01 and about 0.001, betweenabout 0.01 and about 0.005, between about 0.01 and about 0.008, betweenabout 0.008 and about 0.0001, between about 0.008 and about 0.0003,between about 0.008 and about 0.0005, between about 0.008 and about0.0008, between about 0.008 and about 0.001, between about 0.008 andabout 0.005, between about 0.005 and about 0.0001, between about 0.005and about 0.0003, between about 0.005 and about 0.0005, between about0.005 and about 0.0008, and/or between about 0.005 and about 0.001.

In some non-limiting examples, suitable materials for use to form an NIC810, may include organic materials, such as small molecule organicmaterials and/or organic polymers. Non-limiting examples of suitableorganic materials include without limitation polycyclic aromaticcompounds including without limitation organic molecules, includingwithout limitation, optionally one or more heteroatoms, includingwithout limitation, nitrogen (N), sulfur (S), oxygen (O), phosphorus (P)and/or Al. In some non-limiting examples, a polycyclic aromatic compoundmay include, without limitation, organic molecules each including a coremoiety and at least one terminal moiety bonded to the core moiety. Anon-limiting number of terminal moieties may be 1 or more, 2 or more, 3or more, and/or 4 or more. Without limiting the generality of theforegoing, in the case of 2 or more terminal moieties, the terminalmoieties may be the same and/or different, and/or a subset of theterminal moieties may be the same but different from at least oneremaining moiety.

Suitable nucleation inhibiting materials include organic materials, suchas small molecule organic materials and organic polymers.

Non-limiting examples of suitable materials for use to form an NIC 810include at least one material described in at least one of U.S. Pat. No.10,270,033, PCT International Application No. PCT/IB2018/052881, PCTInternational Application No. PCT/IB2019/053706 and/or PCT InternationalApplication No. PCT/IB2019/050839.

In some non-limiting examples, the NIC 810 may act as an opticalcoating. In some non-limiting examples, the NIC 810 may modify at leastproperty and/or characteristic of the light emitted from at least oneemissive region 1910 of the device 100. In some non-limiting examples,the NIC 810 may exhibit a degree of haze, causing emitted light to bescattered. In some non-limiting examples, the NIC 810 may comprise acrystalline material for causing light transmitted therethrough to bescattered. Such scattering of light may facilitate enhancement of theoutcoupling of light from the device in some non-limiting examples, Insome non-limiting examples, the NIC 810 may initially be deposited as asubstantially non-crystalline, including without limitation,substantially amorphous, coating, whereupon, after deposition thereof,the NIC 810 may become crystallized and thereafter serve as an opticalcoupling.

As discussed previously, in some non-limiting examples, one or more ofthe CPLs 3610 may act as an NIC 810, and may, in some non-limitingexamples, exhibit behaviour described herein.

Where features or aspects of the present disclosure are described interms of Markush groups, it will be appreciated by those having ordinaryskill in the relevant art that the present disclosure is also therebydescribed in terms of any individual member of sub-group of members ofsuch Markush group.

Terminology

References in the singular form include the plural and vice versa,unless otherwise noted.

As used herein, relational terms, such as “first” and “second”, andnumbering devices such as “a”, “b” and the like, may be used solely todistinguish one entity or element from another entity or element,without necessarily requiring or implying any physical or logicalrelationship or order between such entities or elements.

The terms “including” and “comprising” are used expansively and in anopen-ended fashion, and thus should be interpreted to mean “including,but not limited to”. The terms “example” and “exemplary” are used simplyto identify instances for illustrative purposes and should not beinterpreted as limiting the scope of the invention to the statedinstances. In particular, the term “exemplary” should not be interpretedto denote or confer any laudatory, beneficial or other quality to theexpression with which it is used, whether in terms of design,performance or otherwise.

The terms “couple” and “communicate” in any form are intended to meaneither a direct connection or indirect connection through someinterface, device, intermediate component or connection, whetheroptically, electrically, mechanically, chemically, or otherwise.

The terms “on” or “over” when used in reference to a first componentrelative to another component, and/or “covering” or which “covers”another component, may encompass situations where the first component isdirectly on (including without limitation, in physical contact with) theother component, as well as cases where one or more interveningcomponents are positioned between the first component and the othercomponent.

Amounts, ratios and/or other numerical values are sometimes presentedherein in a range format. Such range formats are used for convenience,illustration and brevity and should be understood flexibly to includenot only numerical values explicitly specified as limits of a range, butalso all individual numerical values and/or sub-ranges encompassedwithin that range as if each numerical value and/or sub-range had beenexplicitly specified.

Directional terms such as “upward”, “downward”, “left” and “right” areused to refer to directions in the drawings to which reference is madeunless otherwise stated. Similarly, words such as “inward” and “outward”are used to refer to directions toward and away from, respectively, thegeometric center of the device, area or volume or designated partsthereof. Moreover, all dimensions described herein are intended solelyto be by way of example of purposes of illustrating certain embodimentsand are not intended to limit the scope of the disclosure to anyembodiments that may depart from such dimensions as may be specified.

As used herein, the terms “substantially”, “substantial”,“approximately” and/or “about” are used to denote and account for smallvariations. When used in conjunction with an event or circumstance, suchterms can refer to instances in which the event or circumstance occursprecisely, as well as instances in which the event or circumstanceoccurs to a close approximation. By way of non-limiting example, whenused in conjunction with a numerical value, such terms may refer to arange of variation of less than or equal to ±10% of such numericalvalue, such as less than or equal to ±5%, less than or equal to ±4%,less than or equal to ±3%, less than or equal to ±2%, less than or equalto ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, and/orless than equal to ±0.05%.

As used herein, the phrase “consisting substantially of” will beunderstood to include those elements specifically recited and anyadditional elements that do not materially affect the basic and novelcharacteristics of the described technology, while the phrase“consisting of” without the use of any modifier, excludes any elementnot specifically recited.

As will be understood by those having ordinary skill in the relevantart, for any and all purposes, particularly in terms of providing awritten description, all ranges disclosed herein also encompass any andall possible sub-ranges and/or combinations of sub-ranges thereof. Anylisted range may be easily recognized as sufficiently describing and/orenabling the same range being broken down at least into equal fractionsthereof, including without limitation, halves, thirds, quarters, fifths,tenths etc. As a non-limiting example, each range discussed herein maybe readily be broken down into a lower third, middle third and/or upperthird, etc.

As will also be understood by those having ordinary skill in therelevant art, all language and/or terminology such as “up to”, “atleast”, “greater than”, “less than”, and the like, may include and/orrefer the recited range(s) and may also refer to ranges that may besubsequently broken down into sub-ranges as discussed herein.

As will be understood by those having ordinary skill in the relevantart, a range includes each individual member of the recited range.

General

The purpose of the Abstract is to enable the relevant patent office orthe public generally, and specifically, persons of ordinary skill in theart who are not familiar with patent or legal terms or phraseology, toquickly determine from a cursory inspection, the nature of the technicaldisclosure. The Abstract is neither intended to define the scope of thisdisclosure, nor is it intended to be limiting as to the scope of thisdisclosure in any way.

The structure, manufacture and use of the presently disclosed exampleshave been discussed above. The specific examples discussed are merelyillustrative of specific ways to make and use the concepts disclosedherein, and do not limit the scope of the present disclosure. Rather,the general principles set forth herein are considered to be merelyillustrative of the scope of the present disclosure.

It should be appreciated that the present disclosure, which is describedby the claims and not by the implementation details provided, and whichcan be modified by varying, omitting, adding or replacing and/or in theabsence of any element(s) and/or limitation(s) with alternatives and/orequivalent functional elements, whether or not specifically disclosedherein, will be apparent to those having ordinary skill in the relevantart, may be made to the examples disclosed herein, and may provide manyapplicable inventive concepts that may be embodied in a wide variety ofspecific contexts, without straying from the present disclosure.

In particular, features, techniques, systems, sub-systems and methodsdescribed and illustrated in one or more of the above-describedexamples, whether or not described an illustrated as discrete orseparate, may be combined or integrated in another system withoutdeparting from the scope of the present disclosure, to createalternative examples comprised of a combination or sub-combination offeatures that may not be explicitly described above, or certain featuresmay be omitted, or not implemented. Features suitable for suchcombinations and sub-combinations would be readily apparent to personsskilled in the art upon review of the present application as a whole.Other examples of changes, substitutions, and alterations are easilyascertainable and could be made without departing from the spirit andscope disclosed herein.

All statements herein reciting principles, aspects and examples of thedisclosure, as well as specific examples thereof, are intended toencompass both structural and functional equivalents thereof and tocover and embrace all suitable changes in technology. Additionally, itis intended that such equivalents include both currently-knownequivalents as well as equivalents developed in the future, i.e., anyelements developed that perform the same function, regardless ofstructure.

Accordingly, the specification and the examples disclosed therein are tobe considered illustrative only, with a true scope of the disclosurebeing disclosed by the following numbered claims:

1. An opto-electronic device having a plurality of layers, comprising: afirst capping layer (CPL) comprising a first CPL material and disposedin a first emissive region, the first emissive region configured to emitphotons having a first wavelength spectrum that is characterized by afirst onset wavelength; and a second CPL comprising a second CPLmaterial and disposed in a second emissive region, the second emissiveregion configured to emit photons having a second wavelength spectrumthat is characterized by a second onset wavelength; wherein: at leastone of the first CPL and the first CPL material (CPL(m)1) exhibits afirst absorption edge at a first absorption edge wavelength that isshorter than the first onset wavelength; and at least one of the secondCPL and the second CPL material (CPL(m)2) exhibits a second absorptionedge at a second absorption edge wavelength that is shorter than thesecond onset wavelength.
 2. The opto-electronic device of claim 1,wherein the first onset wavelength is shorter than the second onsetwavelength.
 3. The opto-electronic device of claim 1, wherein the firstabsorption edge wavelength is shorter than the second absorption edgewavelength.
 4. The opto-electronic device of claim 1, wherein the firstabsorption edge is characterized by a first extinction wavelength atwhich an extinction coefficient of the CPL(m)1) equals a threshold valueand the second absorption edge is characterized by a second extinctionwavelength at which an extinction coefficient of the CPL(m)2 equals thethreshold value.
 5. The opto-electronic device of claim 4, wherein thefirst onset wavelength is longer than the first absorption edgewavelength by less than at least one of about 50 nm, about 40 nm, about35 nm, about 30 nm, about 25 nm, about 20 nm, about 15 nm, about 10 nm,about 5 nm, and about 3 nm.
 6. The opto-electronic device of claim 4,wherein the first extinction wavelength is a longest one of at least onewavelength at which the extinction coefficient of the CPL(m)1 equals thethreshold value.
 7. The opto-electronic device of claim 4, wherein afirst derivative of the extinction coefficient of the CPL(m)1 as afunction of wavelength is negative at the first extinction wavelength.8. The opto-electronic device of claim 4, wherein the extinctioncoefficient of the CPL(m)1 at a wavelength longer than the firstextinction wavelength is less than the threshold value.
 9. Theopto-electronic device of claim 4, wherein the extinction coefficient ofthe CPL(m)1 at all wavelengths longer than the first extinctionwavelength is less than the threshold value.
 10. The opto-electronicdevice of claim 4, wherein the extinction coefficient of the CPL(m)1 atany wavelength longer than the first onset wavelength is less than atleast one of about 0.1, about 0.09, about 0.08, about 0.06, about 0.05,about 0.03, about 0.01, about 0.005, and about 0.0001.
 11. Theopto-electronic device of claim 4, wherein the extinction coefficient ofthe CPL(m)1 at a wavelength shorter than the first absorption edgewavelength exceeds at least one of about 0.1, about 0.12, about 0.13,about 0.15, about 0.18, about 0.2, about 0.25, about 0.3, about 0.5,about 0.7, about 0.75, about 0.8, about 0.9, and about 1.0.
 12. Theopto-electronic device of claim 4, wherein the refractive index of theCPL(m)1 for at least one wavelength longer than the first absorptionedge wavelength exceeds the refractive index of the CPL(m)1 for at leastone wavelength shorter than the first absorption edge wavelength. 13.The opto-electronic device of claim 4, wherein the refractive index ofthe CPL(m)1 in at least one wavelength in the first wavelength spectrumexceeds at least one of about 1.8, about 1.9, about 1.95, about 2, about2.05, about 2.1, about 2.2, about 2.3, and about 2.5.
 14. Theopto-electronic device of claim 4, wherein the second onset wavelengthis longer than the second absorption edge wavelength by less than atleast one of about 200 nm, about 150 nm, about 130 nm, about 100 nm,about 80 nm, about 70 nm, about 60 nm, about 50 nm, about 40 nm, about35 nm, about 25 nm, about 20 nm, about 15 nm, and about 10 nm.
 15. Theopto-electronic device of claim 4, wherein the second extinctionwavelength is a longest one of at least one wavelength at which theextinction coefficient of the CPL(m)2 equals the threshold value. 16.The opto-electronic device of claim 4, wherein a first derivative of theextinction coefficient of the CPL(m)2 as a function of wavelength isnegative at the second extinction wavelength
 17. The opto-electronicdevice of claim 4, wherein the extinction coefficient of the CPL(m)2 ata wavelength longer than the second extinction wavelength is less thanthe threshold value.
 18. The opto-electronic device of claim 4, whereinthe extinction coefficient of the CPL(m)2 at all wavelengths longer thanthe second extinction wavelength is less than the threshold value. 19.The opto-electronic device of claim 4, wherein the extinctioncoefficient of the CPL(m)2 at any wavelength longer than the secondonset wavelength is less than at least one of about 0.1, about 0.09,about 0.08, about 0.06, about 0.05, about 0.03, about 0.01, about 0.005,and about 0.0001.
 20. The opto-electronic device of claim 4, wherein theextinction coefficient of the CPL(m)2 at a wavelength shorter than thesecond absorption edge wavelength exceeds at least one of about 0.1,about 0.12, about 0.13, about 0.15, about 0.18, about 0.2, about 0.25,about 0.3, about 0.5, about 0.7, about 0.75, about 0.8, about 0.9, andabout 1.0.
 21. The opto-electronic device of claim 4, wherein therefractive index of the CPL(m)2 for at least one wavelength longer thanthe second absorption edge wavelength exceeds the refractive index ofthe CPL(m)1 for at least one wavelength shorter than the secondabsorption edge wavelength.
 22. The opto-electronic device of claim 4,wherein the refractive index of the CPL(m)2 in at least one wavelengthin the second wavelength spectrum exceeds at least one of about 1.8,about 1.9, about 1.95, about 2, about 2.05, about 2.1, about 2.2, about2.3, and about 2.5.
 23. The opto-electronic device of claim 4, whereinthe extinction coefficient of the CPL(m)1 is less than the thresholdvalue at the second onset wavelength.
 24. The opto-electronic device ofclaim 4, wherein the extinction coefficient of the CPL(m)1 is less thanthe threshold value at all wavelengths in the second wavelengthspectrum.
 25. The opto-electronic device of claim 4, wherein theextinction coefficient of the CPL(m)1 at any wavelength in the secondwavelength spectrum is less than at least one of about 0.1, about 0.09,about 0.08, about 0.06, about 0.05, about 0.03, about 0.01, about 0.005,and about 0.001.
 26. The opto-electronic device of claim 4, wherein arefractive index of the CPL(m)1 for at least one wavelength in the firstwavelength spectrum exceeds the refractive index of the CPL(m)1 for atleast one wavelength in the second wavelength spectrum.
 27. Theopto-electronic device of claim 4, wherein a refractive index of theCPL(m)2 for at least one wavelength in the second wavelength spectrumexceeds the refractive index of the CPL(m)2 for at least one wavelengthin the first wavelength spectrum.
 28. The opto-electronic device ofclaim 4, wherein a refractive index of the CPL(m)1 for at least onewavelength of the second wavelength spectrum is less than at least oneof about 1.8, about 1.7, about 1.65, about 1.6, about 1.5, about 1.45,about 1.4, and about 1.3.
 29. The opto-electronic device of claim 4,wherein a refractive index of the CPL(m)2 in at least one wavelength ofthe first wavelength spectrum is less than at least one of about 1.8,about 1.7, about 1.65, about 1.6, about 1.5, about 1.45, about 1.4, andabout 1.3.
 30. The opto-electronic device of claim 4, wherein theextinction coefficient of the CPL(m)2 exceeds the extinction coefficientof the CPL(m)1 for at least one wavelength in the first wavelengthspectrum.
 31. The opto-electronic device of claim 4, wherein theextinction coefficient of the CPL(m)2 exceeds the extinction coefficientof the CPL(m)1 for every wavelength in the first wavelength spectrum.32. The opto-electronic device of claim 4, wherein the threshold valueis at least one of 0.1, 0.09, 0.08, 0.06, 0.05, 0.03, 0.01, 0.005, and0.001.
 33. (canceled)
 34. The opto-electronic device of claim 1, whereinthe first wavelength spectrum and the second wavelength range lie in thevisible spectrum.
 35. The opto-electronic device of claim 1, wherein thefirst wavelength spectrum has a first peak wavelength and the secondwavelength spectrum has a second peak wavelength that is longer than thefirst peak wavelength.
 36. The opto-electronic device of claim 35,wherein the first onset wavelength is a shortest one of at least onewavelength at which an intensity of the first wavelength spectrum is atleast one of about 20%, about 15%, about 10%, about 5%, about 3%, about1%, and about 0.1% of an intensity at the first peak wavelength.
 37. Theopto-electronic device of claim 35, wherein the second onset wavelengthis a shortest one of at least one wavelength at which an intensity ofthe second wavelength spectrum is at least one of about 20%, about 15%,about 10%, about 5%, about 3%, about 1%, and about 0.1% of an intensityat the second peak wavelength.
 38. The opto-electronic device of claim1, wherein the first wavelength spectrum corresponds to a colour that isat least one of B(lue) and G(reen).
 39. The opto-electronic device ofclaim 1, wherein the second wavelength spectrum corresponds to a colourthat is at least one of R(ed) and G(reen).
 40. The opto-electronicdevice of claim 1, wherein the first wavelength spectrum corresponds toa colour that is B(lue) and the second wavelength spectrum correspondsto a colour that is at least one of G(reen) and R(ed).
 41. Theopto-electronic device of claim 1, wherein the first wavelength spectrumcorresponds to a colour that is G(reen) and the second wavelengthspectrum corresponds to a colour that is R(ed).
 42. The opto-electronicdevice of claim 1, wherein the first CPL material has a differentcomposition from the second CPL material.
 43. (canceled)
 44. (canceled)45. (canceled)
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 48. (canceled) 49.(canceled)
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 51. The opto-electronic device of claim 1,further comprising at least one electrode coating in the first emissiveregion and the second emissive region.
 52. The opto-electronic device ofclaim 51, wherein the first CPL is disposed on an exposed layer surfaceof the at least one electrode coating.
 53. (canceled)
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 64. Theopto-electronic device of claim 52, wherein the at least one electrodecoating comprises a metallic coating and a conductive coating disposedon an exposed layer surface of the metallic coating.
 65. (canceled) 66.(canceled)
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 133. The opto-electronicdevice of claim 52, further comprising a semiconducting layer, whereinthe at least one electrode coating extends between the semiconductinglayer and the first CPL in the first emissive region and between thesemiconducting layer and the second CPL in the second emissive region.134. (canceled)
 135. (canceled)
 136. (canceled)
 137. (canceled) 138.(canceled)
 139. (canceled)
 140. (canceled)
 141. The opto-electronicdevice of claim 1, further comprising a third emissive region configuredto emit photons having a third wavelength spectrum that is characterizedby a third onset wavelength.
 142. The opto-electronic device of claim141, wherein the third wavelength spectrum has a third peak wavelengththat is shorter than a second peak wavelength of the second wavelengthspectrum and longer than a first peak wavelength of the first wavelengthspectrum.
 143. The opto-electronic device of claim 141, wherein thefirst wavelength spectrum corresponds to a colour that is B(lue), thesecond wavelength spectrum corresponds to a colour that is G(reen) andthe third wavelength spectrum corresponds to a colour that is R(ed).144. (canceled)
 145. The opto-electronic device of any one of claim 141,wherein a third CPL is disposed in the third emissive region.
 146. Theopto-electronic device of claim 145, wherein at least one of the thirdCPL and the third CPL material (CPL(m)3) exhibits a third absorptionedge at a third absorption edge wavelength that is shorter than thethird onset wavelength.
 147. The opto-electronic device of claim 146,wherein the third absorption edge is characterized by a third extinctionwavelength at which an extinction coefficient of the CPL(m)3 equals athreshold value.
 148. The opto-electronic device of claim 146 whereinthe third onset wavelength is longer than the third absorption edgewavelength by less than at least one of about 200 nm, about 150 nm,about 130 nm, about 100 nm, about 80 nm, about 70 nm, about 60 nm, about50 nm, about 40 nm, about 35 nm, about 25 nm, about 20 nm, about 15 nm,and about 10 nm.
 149. The opto-electronic device of claim 147, whereinthe third extinction wavelength is a longest one of at least onewavelength at which the extinction coefficient of the CPL(m)3 equals thethreshold value.
 150. The opto-electronic device of claim 147, wherein afirst derivative of the extinction coefficient of the CPL(m)3 as afunction of wavelength is negative at the third extinction wavelength.151. The opto-electronic device of claim 147, wherein the extinctioncoefficient of the CPL(m)3 at a wavelength longer than the thirdextinction wavelength is less than the threshold value.
 152. Theopto-electronic device of claim 147, wherein the extinction coefficientof the CPL(m)3 at all wavelengths longer than the third extinctionwavelength is less than the threshold value.
 153. The opto-electronicdevice of claim 147, wherein the extinction coefficient of the CPL(m)3at any wavelength longer than the third onset wavelength is less than atleast one of about 0.1, about 0.09, about 0.08, about 0.06, about 0.05,about 0.03, about 0.01, about 0.005, and about 0.0001.
 154. Theopto-electronic device of claim 147, wherein the extinction coefficientof the CPL(m)3 at a wavelength shorter than the first absorption edgewavelength exceeds at least one of about 0.1, about 0.12, about 0.13,about 0.15, about 0.18, about 0.2, about 0.25, about 0.3, about 0.5,about 0.7, about 0.75, about 0.8, about 0.9, and about 1.0.
 155. Theopto-electronic device of claim 147, wherein the refractive index of theCPL(m)3 for at least one wavelength longer than the third absorptionedge wavelength exceeds the refractive index of the CPL(m)3 for at leastone wavelength shorter than the first absorption edge wavelength. 156.The opto-electronic device of claim 147, wherein the refractive index ofthe CPL(m)3 in at least one wavelength in the third wavelength spectrumexceeds at least one of about 1.8, about 1.9, about 1.95, about 2, about2.05, about 2.1, about 2.2, about 2.3, and about 2.5.
 157. (canceled)